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Results:
1-11
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Results: 11
Authors:
Jenkins, C
Westwood, DI
Elliott, M
Meaton, C
Bland, S
Citation: C. Jenkins et al., Metrology of semiconductor device structures by cross-sectional AFM, MAT SCI E B, 80(1-3), 2001, pp. 138-141
Authors:
Lu, J
Haworth, L
Westwood, DI
Macdonald, JE
Citation: J. Lu et al., Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001), APPL PHYS L, 78(8), 2001, pp. 1080-1082
Authors:
Kuball, M
Mokhtari, H
Cherns, D
Lu, J
Westwood, DI
Citation: M. Kuball et al., Amorphous GaN grown by room temperature molecular beam epitaxy, JPN J A P 1, 39(8), 2000, pp. 4753-4754
Authors:
Haworth, L
Lu, J
Westwood, DI
MacDonald, JE
Citation: L. Haworth et al., Atomic hydrogen cleaning, nitriding and annealing InSb (100), APPL SURF S, 166(1-4), 2000, pp. 253-258
Authors:
Haworth, L
Lu, J
Westwood, DI
Macdonald, JE
Citation: L. Haworth et al., Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100), APPL SURF S, 166(1-4), 2000, pp. 418-422
Authors:
Wolfframm, D
Evans, DA
Westwood, DI
Riley, J
Citation: D. Wolfframm et al., A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies, J CRYST GR, 216(1-4), 2000, pp. 119-126
Nitridation of the GaAs(001) surface: Thermal behavior of the (3x3) reconstruction and its evolution
Authors:
Lu, J
Haworth, L
Hill, P
Westwood, DI
Macdonald, JE
Citation: J. Lu et al., Nitridation of the GaAs(001) surface: Thermal behavior of the (3x3) reconstruction and its evolution, J VAC SCI B, 17(4), 1999, pp. 1659-1665
Authors:
Westwood, DI
Sobiesierski, Z
Matthai, CC
Citation: Di. Westwood et al., The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects, APPL SURF S, 145, 1999, pp. 484-487
Authors:
Lu, J
Westwood, DI
Haworth, L
Hill, P
Macdonald, JE
Citation: J. Lu et al., The (3 X 3) reconstruction and its evolution during the nitridation of GaAs(001), THIN SOL FI, 344, 1999, pp. 567-570
Authors:
Zervos, M
Elliott, M
Westwood, DI
Citation: M. Zervos et al., Surface micro-roughness and transport properties of Si delta-doped GaAs/InxGa1-xAs/GaAs (0.1 <= x <= 0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B, APPL PHYS L, 75(16), 1999, pp. 2458-2460
Authors:
Zervos, M
Elliott, M
Westwood, DI
Citation: M. Zervos et al., Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAsquantum wells grown by molecular beam epitaxy on GaAs(001), APPL PHYS L, 74(14), 1999, pp. 2026-2028
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1-11
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