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Results: 1-25 | 26-26
Results: 1-25/26
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203
Authors: Bayerl, MW Brandt, MS Ambacher, O Stutzmann, M Glaser, ER Henry, RL Wickenden, AE Koleske, DD Suski, T Grzegory, I Porowski, S
Citation: Mw. Bayerl et al., Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203, PHYS REV B, 6312(12), 2001, pp. 5203
GaN decomposition in H-2 and N-2 at MOVPE temperatures and pressures
Authors: Koleske, DD Wickenden, AE Henry, RL Culbertson, JC Twigg, ME
Citation: Dd. Koleske et al., GaN decomposition in H-2 and N-2 at MOVPE temperatures and pressures, J CRYST GR, 223(4), 2001, pp. 466-483
Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN
Authors: Kim, S Henry, RL Wickenden, AE Koleske, DD Rhee, SJ White, JO Myoung, JM Kim, K Li, X Coleman, JJ Bishop, SG
Citation: S. Kim et al., Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN, J APPL PHYS, 90(1), 2001, pp. 252-259
Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces
Authors: Wu, CI Kahn, A Wickenden, AE Koleske, D Henry, RL
Citation: Ci. Wu et al., Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces, J APPL PHYS, 89(1), 2001, pp. 425-429
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Authors: Binari, SC Ikossi, K Roussos, JA Kruppa, W Park, D Dietrich, HB Koleske, DD Wickenden, AE Henry, RL
Citation: Sc. Binari et al., Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE DEVICE, 48(3), 2001, pp. 465-471
Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors
Authors: Klein, PB Binari, SC Ikossi-Anastasiou, K Wickenden, AE Koleske, DD Henry, RL Katzer, DS
Citation: Pb. Klein et al., Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors, ELECTR LETT, 37(10), 2001, pp. 661-662
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
Authors: Klein, PB Binari, SC Ikossi, K Wickenden, AE Koleske, DD Henry, RL
Citation: Pb. Klein et al., Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy, APPL PHYS L, 79(21), 2001, pp. 3527-3529
Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy
Authors: Ptak, AJ Holbert, LJ Ting, L Swartz, CH Moldovan, M Giles, NC Myers, TH Van Lierde, P Tian, C Hockett, RA Mitha, S Wickenden, AE Koleske, DD Henry, RL
Citation: Aj. Ptak et al., Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2740-2742
GaN decomposition in ammonia
Authors: Koleske, DD Wickenden, AE Henry, RL
Citation: Dd. Koleske et al., GaN decomposition in ammonia, MRS I J N S, 5, 2000, pp. NIL_234-NIL_239
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
Authors: Wickenden, AE Koleske, DD Henry, RL Gorman, RJ Twigg, ME Fatemi, M Freitas, JA Moore, WJ
Citation: Ae. Wickenden et al., The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys, J ELEC MAT, 29(1), 2000, pp. 21-26
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
Authors: Teisseyre, H Suski, T Perlin, P Grzegory, I Leszczynski, M Bockowski, M Porowski, S Freitas, JA Henry, RL Wickenden, AE Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors
Authors: Klein, PB Binari, SC Freitas, JA Wickenden, AE
Citation: Pb. Klein et al., Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors, J APPL PHYS, 88(5), 2000, pp. 2843-2852
High resolution X-ray diffraction and X-ray topography study of GaN on sapphire
Authors: Chaudhuri, J Ng, MH Koleske, DD Wickenden, AE Henry, RL
Citation: J. Chaudhuri et al., High resolution X-ray diffraction and X-ray topography study of GaN on sapphire, MAT SCI E B, 64(2), 1999, pp. 99-106
Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2 eV) recombination from Mg-doped GaN
Authors: Glaser, ER Kennedy, TA Freitas, JA Shanabrook, BV Wickenden, AE Koleske, DD Henry, RL Obloh, H
Citation: Er. Glaser et al., Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2 eV) recombination from Mg-doped GaN, PHYSICA B, 274, 1999, pp. 58-62
The origin of red luminescence from Mg-doped GaN
Authors: Bayerl, MW Brandt, MS Glaser, ER Wickenden, AE Koleske, DD Henry, RL Stutzmann, M
Citation: Mw. Bayerl et al., The origin of red luminescence from Mg-doped GaN, PHYS ST S-B, 216(1), 1999, pp. 547-550
The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films
Authors: Wickenden, AE Koleske, DD Henry, RL Gorman, RJ Culbertson, JC Twigg, ME
Citation: Ae. Wickenden et al., The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films, J ELEC MAT, 28(3), 1999, pp. 301-307
Electronic structure of H/GaN(0001): An EELS study of Ga-H formation
Authors: Bellitto, VJ Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., Electronic structure of H/GaN(0001): An EELS study of Ga-H formation, PHYS REV B, 60(7), 1999, pp. 4816-4820
Efficient electron-stimulated desorption of hydrogen from GaN(0001)
Authors: Bellitto, VJ Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., Efficient electron-stimulated desorption of hydrogen from GaN(0001), PHYS REV B, 60(7), 1999, pp. 4821-4825
Optical detection of electron paramagnetic resonance in electron-irradiated GaN
Authors: Bozdog, C Przybylinska, H Watkins, GD Harle, V Scholz, F Mayer, M Kamp, M Molnar, RJ Wickenden, AE Koleske, DD Henry, RL
Citation: C. Bozdog et al., Optical detection of electron paramagnetic resonance in electron-irradiated GaN, PHYS REV B, 59(19), 1999, pp. 12479-12486
Desorption of hydrogen from GaN(0001) observed by HREELS and ELS
Authors: Bellitto, VJ Yang, Y Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., Desorption of hydrogen from GaN(0001) observed by HREELS and ELS, SURF SCI, 442(2), 1999, pp. L1019-L1023
HREELS of H/GaN(0001): evidence for Ga termination
Authors: Bellitto, VJ Thoms, BD Koleske, DD Wickenden, AE Henry, RL
Citation: Vj. Bellitto et al., HREELS of H/GaN(0001): evidence for Ga termination, SURF SCI, 430(1-3), 1999, pp. 80-88
Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire
Authors: Twigg, ME Henry, RL Wickenden, AE Koleske, DD Culbertson, JC
Citation: Me. Twigg et al., Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire, APPL PHYS L, 75(5), 1999, pp. 686-688
Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors
Authors: Klein, PB Freitas, JA Binari, SC Wickenden, AE
Citation: Pb. Klein et al., Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors, APPL PHYS L, 75(25), 1999, pp. 4016-4018
Properties of Si-doped GaN films grown using multiple AlN interlayers
Authors: Koleske, DD Twigg, ME Wickenden, AE Henry, RL Gorman, RJ Freitas, JA Fatemi, M
Citation: Dd. Koleske et al., Properties of Si-doped GaN films grown using multiple AlN interlayers, APPL PHYS L, 75(20), 1999, pp. 3141-3143
Enhanced GaN decomposition in H-2 near atmospheric pressures (vol 73, pg 2018, 1998)
Authors: Koleske, DD Wickenden, AE Henry, RL Twigg, ME Culbertson, JC Gorman, RJ
Citation: Dd. Koleske et al., Enhanced GaN decomposition in H-2 near atmospheric pressures (vol 73, pg 2018, 1998), APPL PHYS L, 75(11), 1999, pp. 1646-1646
Risultati: 1-25 | 26-26