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Results: 1-19 |
Results: 19
MESOSCOPIC PHENOMENA IN A-SI BASED MICROSTRUCTURES
Authors: DVURECHENSKII AV YAKIMOV AI
Citation: Av. Dvurechenskii et Ai. Yakimov, MESOSCOPIC PHENOMENA IN A-SI BASED MICROSTRUCTURES, Physica status solidi. b, Basic research, 205(1), 1998, pp. 193-198
EFFECT OF SPIN-GLASS ORDERING ON CONDUCTION IN A-SI1-CMNC NEAR THE METAL-INSULATOR-TRANSITION
Authors: YAKIMOV AI DVURECHENSKII AV ADKINS CJ
Citation: Ai. Yakimov et al., EFFECT OF SPIN-GLASS ORDERING ON CONDUCTION IN A-SI1-CMNC NEAR THE METAL-INSULATOR-TRANSITION, Physica status solidi. b, Basic research, 205(1), 1998, pp. 299-303
STRETCHED-EXPONENTIAL CONDUCTIVITY RELAXATION AND 1 F NOISE ON FRACTAL NETWORKS OF POROUS AMORPHOUS-SILICON/
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV
Citation: Ai. Yakimov et al., STRETCHED-EXPONENTIAL CONDUCTIVITY RELAXATION AND 1 F NOISE ON FRACTAL NETWORKS OF POROUS AMORPHOUS-SILICON/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1998, pp. 111-129
FORMATION OF ZERO-DIMENSIONAL HOLE STATES DURING MOLECULAR-BEAM EPITAXY OF GE ON SI(100)
Authors: YAKIMOV AI DVURECHENSKII AV NIKIFOROV AI PCHELYAKOV OP
Citation: Ai. Yakimov et al., FORMATION OF ZERO-DIMENSIONAL HOLE STATES DURING MOLECULAR-BEAM EPITAXY OF GE ON SI(100), JETP letters, 68(2), 1998, pp. 135-141
ONE-DIMENSIONAL LOCALIZATION IN POROUS A-SI1-CMNC
Authors: YAKIMOV AI DVURECHENSKII AV DRAVIN VA PROSKURYAKOV YY
Citation: Ai. Yakimov et al., ONE-DIMENSIONAL LOCALIZATION IN POROUS A-SI1-CMNC, JETP letters, 67(4), 1998, pp. 284-288
SUPPRESSION OF THE FRACTAL CONDUCTIVITY CHANNEL AND SUPERLOCALIZATIONEFFECTS IN POROUS A-SI-H
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV SHCHERBAKOVA LA
Citation: Ai. Yakimov et al., SUPPRESSION OF THE FRACTAL CONDUCTIVITY CHANNEL AND SUPERLOCALIZATIONEFFECTS IN POROUS A-SI-H, Journal of experimental and theoretical physics, 85(3), 1997, pp. 501-506
THE TEMPERATURE-INDUCED TRANSITION FROM 3D TO 1D HOPPING CONDUCTION IN POROUS AMORPHOUS SI1-CMNC
Authors: YAKIMOV AI DVURECHENSKII AV STEPINA NP SCHERBAKOVA LA ADKINS CJ CHORNIY VZ DRAVIN VA GROETZSCHEL R
Citation: Ai. Yakimov et al., THE TEMPERATURE-INDUCED TRANSITION FROM 3D TO 1D HOPPING CONDUCTION IN POROUS AMORPHOUS SI1-CMNC, Journal of physics. Condensed matter, 9(4), 1997, pp. 889-899
THE KONDO EFFECT IN AMORPHOUS SI1-CMNC
Authors: YAKIMOV AI DVURECHENSKII AV ADKINS CJ DRAVIN VA
Citation: Ai. Yakimov et al., THE KONDO EFFECT IN AMORPHOUS SI1-CMNC, Journal of physics. Condensed matter, 9(2), 1997, pp. 499-506
METAL-INSULATOR-TRANSITION IN AMORPHOUS SI1-CMNC OBTAINED BY ION-IMPLANTATION
Authors: YAKIMOV AI DVURECHENSKII AV
Citation: Ai. Yakimov et Av. Dvurechenskii, METAL-INSULATOR-TRANSITION IN AMORPHOUS SI1-CMNC OBTAINED BY ION-IMPLANTATION, JETP letters, 65(4), 1997, pp. 354-358
ELECTRICAL-PROPERTIES OF FRACTAL SYSTEMS BASED ON POROUS AMORPHOUS-SILICON
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV SHCHERBAKOVA LA NIKIFOROV AI
Citation: Ai. Yakimov et al., ELECTRICAL-PROPERTIES OF FRACTAL SYSTEMS BASED ON POROUS AMORPHOUS-SILICON, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 110(1), 1996, pp. 322-333
CURRENT-VOLTAGE CHARACTERISTICS OF POROUS AMORPHOUS SI1-XMNX IN THE ONE-DIMENSIONAL HOPPING REGIME
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV ADKINS CJ DRAVIN VA
Citation: Ai. Yakimov et al., CURRENT-VOLTAGE CHARACTERISTICS OF POROUS AMORPHOUS SI1-XMNX IN THE ONE-DIMENSIONAL HOPPING REGIME, Philosophical magazine letters, 73(1), 1996, pp. 17-26
PHOTOSTIMULATED MESOSCOPIC CURRENT FLUCTUATIONS IN A-SI BASED MICROSTRUCTURES
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV
Citation: Ai. Yakimov et al., PHOTOSTIMULATED MESOSCOPIC CURRENT FLUCTUATIONS IN A-SI BASED MICROSTRUCTURES, JETP letters, 64(10), 1996, pp. 724-728
LOW-DIMENSIONAL HOPPING CONDUCTION IN POROUS AMORPHOUS-SILICON
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV SCHERBAKOVA LA
Citation: Ai. Yakimov et al., LOW-DIMENSIONAL HOPPING CONDUCTION IN POROUS AMORPHOUS-SILICON, Physica. B, Condensed matter, 205(3-4), 1995, pp. 298-304
MAGNETIC CORRELATIONS ON THE INSULATING SIDE OF THE METAL-INSULATOR-TRANSITION IN AMORPHOUS SI1-XMNX
Authors: YAKIMOV AI WRIGHT T ADKINS CJ DVURECHENSKII AV
Citation: Ai. Yakimov et al., MAGNETIC CORRELATIONS ON THE INSULATING SIDE OF THE METAL-INSULATOR-TRANSITION IN AMORPHOUS SI1-XMNX, Physical review. B, Condensed matter, 51(23), 1995, pp. 16549-16552
CONDUCTANCE OSCILLATIONS IN GE SI HETEROSTRUCTURES CONTAINING QUANTUMDOTS/
Authors: YAKIMOV AI MARKOV VA DVURECHENSKII AV PCHELYAKOV OP
Citation: Ai. Yakimov et al., CONDUCTANCE OSCILLATIONS IN GE SI HETEROSTRUCTURES CONTAINING QUANTUMDOTS/, Journal of physics. Condensed matter, 6(13), 1994, pp. 2573-2582
HOPPING CONDUCTION AND RESONANT-TUNNELING IN AMORPHOUS-SILICON MICROSTRUCTURES
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV
Citation: Ai. Yakimov et al., HOPPING CONDUCTION AND RESONANT-TUNNELING IN AMORPHOUS-SILICON MICROSTRUCTURES, Journal of physics. Condensed matter, 6(13), 1994, pp. 2583-2594
INELASTIC RESONANT-TUNNELING IN AMORPHOUS-SILICON MICROSTRUCTURES
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV
Citation: Ai. Yakimov et al., INELASTIC RESONANT-TUNNELING IN AMORPHOUS-SILICON MICROSTRUCTURES, Physics letters. A, 194(1-2), 1994, pp. 133-136
THE COULOMB GAP IN THE PHENOMENA OF NONLI NEAR SCREENING AND NONOHMICHOPPING CONDUCTIVITY
Authors: YAKIMOV AI DVURECHENSKII AV BASKIN EM
Citation: Ai. Yakimov et al., THE COULOMB GAP IN THE PHENOMENA OF NONLI NEAR SCREENING AND NONOHMICHOPPING CONDUCTIVITY, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 104(1), 1993, pp. 2473-2482
SPONTANEOUS FLUCTUATIONS OF VARIABLE-RANGE-HOPPING CURRENT IN AMORPHOUS-SILICON MICROSTRUCTURES
Authors: YAKIMOV AI STEPINA NP DVURECHENSKII AV
Citation: Ai. Yakimov et al., SPONTANEOUS FLUCTUATIONS OF VARIABLE-RANGE-HOPPING CURRENT IN AMORPHOUS-SILICON MICROSTRUCTURES, Physics letters. A, 179(2), 1993, pp. 131-134
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