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Results: 1-11 |
Results: 11

Authors: YAMAGUCHI AA MOCHIZUKI Y SUNAKAWA H USUI A
Citation: Aa. Yamaguchi et al., DETERMINATION OF VALENCE-BAND SPLITTING PARAMETERS IN GAN, Journal of applied physics, 83(8), 1998, pp. 4542-4544

Authors: USUI A SUNAKAWA H SAKAI A YAMAGUCHI AA
Citation: A. Usui et al., THICK GAN EPITAXIAL-GROWTH WITH LOW DISLOCATION DENSITY BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 36(7B), 1997, pp. 899-902

Authors: YAMAGUCHI AA MOCHIZUKI Y SASAOKA C KIMURA A NIDO M USUI A
Citation: Aa. Yamaguchi et al., REFLECTANCE SPECTROSCOPY ON GAN FILMS UNDER UNIAXIAL-STRESS, Applied physics letters, 71(3), 1997, pp. 374-376

Authors: YAMAGUCHI AA MANAKO T SAKAI A SUNAKAWA H KIMURA A NIDO M USUI A
Citation: Aa. Yamaguchi et al., SINGLE-DOMAIN HEXAGONAL GAN FILMS ON GAAS(100) VICINAL SUBSTRATES GROWN BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 35(7B), 1996, pp. 873-875

Authors: KIMURA A YAMAGUCHI AA SAKAI A SUNAKAWA H NIDO M USUI A
Citation: A. Kimura et al., SURFACE-MORPHOLOGY STUDY FOR HEXAGONAL GAN GROWN ON GAAS(100) SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 35(11B), 1996, pp. 1480-1482

Authors: SUNAKAWA H YAMAGUCHI AA KIMURA A USUI A
Citation: H. Sunakawa et al., GROWTH OF INN BY CHLORIDE-TRANSPORT VAPOR-PHASE EPITAXY, JPN J A P 2, 35(11A), 1996, pp. 1395-1397

Authors: YAMAGUCHI AA USUI A
Citation: Aa. Yamaguchi et A. Usui, THEORETICAL GAIN OF [HHK]-ORIENTED QUANTUM-WIRE LASERS, Journal of applied physics, 79(6), 1996, pp. 3340-3342

Authors: YAMAGUCHI AA USUI A
Citation: Aa. Yamaguchi et A. Usui, ANISOTROPIC OPTICAL MATRIX-ELEMENTS IN [HHK]-ORIENTED QUANTUM WIRES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 288-294

Authors: YAMAGUCHI AA USUI A
Citation: Aa. Yamaguchi et A. Usui, OPTICAL MATRIX-ELEMENTS IN [HHK]-ORIENTED QUANTUM WIRES, Journal of applied physics, 78(2), 1995, pp. 1361-1363

Authors: YAMAGUCHI AA NISHI K USUI A
Citation: Aa. Yamaguchi et al., ANISOTROPIC OPTICAL MATRIX-ELEMENTS IN QUANTUM-WELLS WITH VARIOUS SUBSTRATE ORIENTATIONS, JPN J A P 2, 33(7A), 1994, pp. 120000912-120000915

Authors: NISHI K YAMAGUCHI AA AHOPELTO J USUI A SAKAKI H
Citation: K. Nishi et al., ANALYSES OF LOCALIZED CONFINEMENT POTENTIAL IN SEMICONDUCTOR STRAINEDWIRES AND DOTS BURIED IN LATTICE-MISMATCHED MATERIALS, Journal of applied physics, 76(11), 1994, pp. 7437-7445
Risultati: 1-11 |