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Results: 1-9 |
Results: 9

Authors: SI SK KIM SJ MOON Y YOON E YOO JB
Citation: Sk. Si et al., OPTICAL-PROPERTIES OF CD-DIFFUSED AND ZN-DIFFUSED LAYERS IN INP, Journal of the Korean Physical Society, 32(2), 1998, pp. 162-165

Authors: CHOI JY KIM KJ YOO JB KIM DH
Citation: Jy. Choi et al., PROPERTIES OF CADMIUM-SULFIDE THIN-FILMS DEPOSITED BY CHEMICAL BATH DEPOSITION WITH ULTRASONICATION, Solar energy, 64(1-3), 1998, pp. 41-47

Authors: YANG SY YOO JB SI SK KIM SJ PARK IS KIM D
Citation: Sy. Yang et al., EFFECTS OF DIELECTRIC FILMS ON ZN-DIFFUSION IN INP USING THIN-FILM DEPOSITION AND RAPID THERMAL ANNEALING, Journal of the Korean Physical Society, 30, 1997, pp. 77-80

Authors: YOO JB ROH JS HWANG YY
Citation: Jb. Yoo et al., INCREASED ANDROGEN ANDROGEN IN INFERTILE WOMEN WITH POLYCYSTIC OVARIES, Human reproduction, 12, 1997, pp. 201-201

Authors: PARK CY YOO JB PARK C HYUN KS OH DK LEE YH LEE C PARK HM
Citation: Cy. Park et al., FABRICATION OF INGAAS INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 974-977

Authors: PARK CY HYUN KS KANG SK SONG MK YOON TY KIM HM PARK HM PARK SC LEE YH LEE C YOO JB
Citation: Cy. Park et al., HIGH-PERFORMANCE INGAAS INP AVALANCHE PHOTODIODE FOR A 2.5-GBS-1 OPTICAL RECEIVER, Optical and quantum electronics, 27(5), 1995, pp. 553-559

Authors: PARK HH YOO JB OH DK KIM JS LEE JY
Citation: Hh. Park et al., EFFECT OF STRESS SIGN AND FILM THICKNESS ON INTERFACE NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED MULTILAYERS, Journal of applied physics, 75(10), 1994, pp. 4990-4993

Authors: JANG DH YOO JB KOAK BH LEE JY KANEKO Y KISHINO K
Citation: Dh. Jang et al., ZN INDUCED LAYER DISORDERING IN GAINP ALINP VISIBLE MULTIQUANTUM-WELLDISTRIBUTED BRAGG REFLECTOR LASER-DIODE/, JPN J A P 2, 32(5B), 1993, pp. 120000710-120000712

Authors: YOO JB KIM JS JANG DH KOAK BH OH DK KIM HM LEE YT
Citation: Jb. Yoo et al., EFFECTS OF V III RATIO ON SI-DOPING IN INGAAS LATTICE-MATCHED TO INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 132(1-2), 1993, pp. 43-47
Risultati: 1-9 |