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Results: 1-25/31
Authors:
Nishinohara, KT
Akasaka, Y
Saito, T
Yagishita, A
Murakoshi, A
Suguro, K
Arikado, T
Citation: Kt. Nishinohara et al., Surface channel metal gate complementary MOS with light counter doping andsingle work function gate electrode, JPN J A P 1, 40(4B), 2001, pp. 2603-2606
Authors:
Shimizu, T
Hiroki, M
Yamaoka, Y
Kato, S
Suda, M
Ide, K
Yagishita, A
Hirai, S
Citation: T. Shimizu et al., Alternating paroxysmal hemiballism-hemichorea in bilateral internal carotid artery stenosis, INTERN MED, 40(8), 2001, pp. 808-812
Authors:
Harada, Y
Watanabe, M
Eguchi, R
Ishiwata, Y
Matsubara, M
Kotani, A
Yagishita, A
Shin, S
Citation: Y. Harada et al., Polarization dependence of the soft X-ray raman scattering at the L edge of TiO2, J ELEC SPEC, 114, 2001, pp. 969-973
Authors:
Watanabe, M
Toyoshima, A
Adachi, J
Yagishita, A
Citation: M. Watanabe et al., Current status of the undulator beamline BL-2C at Photon Factory, NUCL INST A, 467, 2001, pp. 512-515
Authors:
Ono, K
Oh, JH
Horiba, K
Mizuguchi, M
Oshima, M
Kiyokura, T
Maeda, F
Watanabe, Y
Kakizaki, A
Kikuchi, T
Yagishita, A
Kato, H
Citation: K. Ono et al., Performance of the high-resolution high-flux monochromator for bending magnet beamline BL-1C at the Photon Factory, NUCL INST A, 467, 2001, pp. 573-576
Authors:
Yagishita, A
Saito, T
Nakajima, K
Inumiya, S
Matsuo, K
Shibata, T
Tsunashima, Y
Suguro, K
Arikado, T
Citation: A. Yagishita et al., Improvement of threshold voltage deviation in damascene metal gate transistors, IEEE DEVICE, 48(8), 2001, pp. 1604-1611
Authors:
Shimizu, T
Maehara, T
Hino, T
Komori, T
Shimizu, H
Yagishita, A
Yokota, T
Hirai, S
Rossini, PM
Citation: T. Shimizu et al., Effect of multiple subpial transection on motor cortical excitability in cortical dysgenesis, BRAIN, 124, 2001, pp. 1336-1349
Authors:
Inumiya, S
Yagishita, A
Saito, T
Hotta, M
Ozawa, Y
Suguro, K
Tsunashima, Y
Arikado, T
Citation: S. Inumiya et al., Sub-1.3 nm amorphous tantalum pentoxide gate dielectrics for damascene metal gate transistors, JPN J A P 1, 39(4B), 2000, pp. 2087-2093
Authors:
Matsuo, K
Nakajima, K
Omoto, S
Nakamura, S
Yagishita, A
Minamihaba, G
Yano, H
Suguro, K
Citation: K. Matsuo et al., Low leakage TiO2 gate insulator formed by ultrathin TiN deposition and low-temperature oxidation, JPN J A P 1, 39(10), 2000, pp. 5794-5799
Authors:
Kiyokura, T
Maeda, F
Watanabe, Y
Iketaki, Y
Nagai, K
Horikawa, Y
Oshima, M
Shigemasa, E
Yagishita, A
Citation: T. Kiyokura et al., Throughput measurement of a multilayer-coated Schwarzschild objective using synchrotron radiation, OPT REV, 7(6), 2000, pp. 576-578
Authors:
Ito, K
Adachi, J
Hall, R
Motoki, S
Shigemasa, E
Soejima, K
Yagishita, A
Citation: K. Ito et al., Photoelectron angular distributions from dissociative photoionization channels of fixed-in-space molecular hydrogen, J PHYS B, 33(3), 2000, pp. 527-533
Authors:
Motoki, S
Adachi, J
Hikosaka, Y
Ito, K
Sano, M
Soejima, K
Yagishita, A
Raseev, G
Cherepkov, NA
Citation: S. Motoki et al., K-shell photoionization of CO: I. Angular distributions of photoelectrons from fixed-in-space molecules, J PHYS B, 33(20), 2000, pp. 4193-4212
Authors:
Cherepkov, NA
Raseev, G
Adachi, J
Hikosaka, Y
Ito, K
Motoki, S
Sano, M
Soejima, K
Yagishita, A
Citation: Na. Cherepkov et al., K-shell photoionization of CO: II. Determination of dipole matrix elementsand phase differences, J PHYS B, 33(20), 2000, pp. 4213-4236
Authors:
Hayaishi, T
Fujita, Y
Izumisawa, M
Tanaka, T
Murakami, E
Shigemasa, E
Yagishita, A
Morioka, Y
Citation: T. Hayaishi et al., Multi-step post-collision interaction effects in K-shell photoionization of Kr, J PHYS B, 33(1), 2000, pp. 37-45
Authors:
Kurihara, T
Yagishita, A
Enomoto, A
Kobayashi, H
Shidara, T
Shirakawa, A
Nakahara, K
Saitou, H
Inoue, K
Nagashima, Y
Hyodo, T
Nagai, Y
Hasegawa, M
Inoue, Y
Kogure, Y
Doyama, M
Citation: T. Kurihara et al., Intense positron beam at KEK, NUCL INST B, 171(1-2), 2000, pp. 164-171
Authors:
Doyama, M
Inoue, M
Kogure, Y
Kurihara, T
Yagishita, A
Shidara, T
Nakahara, K
Hayashi, Y
Yoshiie, T
Nakagawa, S
Citation: M. Doyama et al., Positron microscopes at KEK, NUCL INST B, 171(1-2), 2000, pp. 189-193
Authors:
Harada, Y
Kinugasa, T
Eguchi, R
Matsubara, M
Kotani, A
Watanabe, M
Yagishita, A
Shin, S
Citation: Y. Harada et al., Polarization dependence of soft-x-ray Raman scattering at the L edge of TiO2, PHYS REV B, 61(19), 2000, pp. 12854-12859
Authors:
Ito, K
Adachi, J
Hikosaka, Y
Motoki, S
Soejima, K
Yagishita, A
Raseev, G
Cherepkov, NA
Citation: K. Ito et al., Photoelectron angular distributions from OK shell of oriented CO molecules: A critical comparison between theory and experiment, PHYS REV L, 85(1), 2000, pp. 46-49
Authors:
Cherepkov, NA
Semenov, SK
Hikosaka, Y
Ito, K
Motoki, S
Yagishita, A
Citation: Na. Cherepkov et al., Manifestation of many-electron correlations in photoionization of the K shell of N-2, PHYS REV L, 84(2), 2000, pp. 250-253
Authors:
Yagishita, A
Saito, T
Nakajima, K
Inumiya, S
Akasaka, Y
Ozawa, Y
Hieda, K
Tsunashima, Y
Suguro, K
Arikado, T
Okumura, K
Citation: A. Yagishita et al., High performance damascene metal gate MOSFET's for 0.1 mu m regime, IEEE DEVICE, 47(5), 2000, pp. 1028-1034
Authors:
Maehara, T
Arai, N
Shimizu, H
Yagishita, A
Oda, M
Citation: T. Maehara et al., Cortical dysplasia with ossification, EPILEPSIA, 41(11), 2000, pp. 1489-1493
Authors:
Saito, T
Yagishita, A
Inumiya, S
Nakajima, K
Akasaka, Y
Ozawa, Y
Yano, H
Hieda, K
Suguro, K
Arikado, T
Okumura, K
Citation: T. Saito et al., Plasma-damage-free gate process using chemical mechanical polishing for 0.1 mu m MOSFETs, JPN J A P 1, 38(4B), 1999, pp. 2227-2231
Authors:
Yagishita, A
Yamanouchi, H
Ikezaki, K
Citation: A. Yagishita et al., Charge trapping sites in spherulitic polypropylene, JPN J A P 1, 38(4A), 1999, pp. 2053-2058
Authors:
Hayaishi, T
Tanaka, T
Yoshii, H
Murakami, E
Shigemasa, E
Yagishita, A
Koike, F
Morioka, Y
Citation: T. Hayaishi et al., Post-collision interaction effects of threshold photoelectrons in Kr L-3-shell photoionization, J PHYS B, 32(6), 1999, pp. 1507-1513
Authors:
Arp, U
Iemura, K
Kutluk, G
Nagata, T
Yagi, S
Yagishita, A
Citation: U. Arp et al., 3d photoionization of Xe, Cs and Ba and the collapse of the 4f wavefunction, J PHYS B, 32(5), 1999, pp. 1295-1304