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Results:
1-15
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Results: 15
Authors:
Yaung, DN
Wuu, SG
Fang, YK
Wang, CS
Tseng, CH
Liang, MS
Citation: Dn. Yaung et al., Nonsilicide source/drain pixel for 0.25-mu m CMOS image sensor, IEEE ELEC D, 22(2), 2001, pp. 71-73
Authors:
Yaung, DN
Fang, YK
Chen, CH
Hung, CC
Tsao, FC
Wuu, SG
Liang, MS
Citation: Dn. Yaung et al., To suppress photoexcited current of hydrogenated polysilicon TFTs with lowtemperature oxidation of polychannel, IEEE ELEC D, 22(1), 2001, pp. 23-25
Authors:
Yaung, DN
Fang, YK
Huang, KC
Wang, YJ
Hung, CC
Liang, MS
Wuu, SG
Citation: Dn. Yaung et al., Subthreshold characteristics of submicrometer polysilicon thin film transistor, THIN SOL FI, 382(1-2), 2001, pp. 271-274
Authors:
Huang, KC
Fang, YK
Yaung, DN
Chen, CH
Hsu, YL
Ting, SF
Lin, Y
Kuo, DS
Wang, CS
Liang, MS
Citation: Kc. Huang et al., A novel programming technique for highly scalable and disturbance immune flash EEPROM, SOL ST ELEC, 45(2), 2001, pp. 297-301
Authors:
Yaung, DN
Fang, YK
Lee, KY
Hwang, KC
Wuu, SG
Liang, MS
Citation: Dn. Yaung et al., A comparison of behaviors between hydrogenated/unhydrogenated polysilicon thin film transistors under electric stress, JPN J A P 1, 39(7A), 2000, pp. 3896-3901
Authors:
Huang, KC
Fang, YK
Yaung, DN
Chen, CW
Sung, HC
Kuo, DS
Wang, CS
Liang, MS
Citation: Kc. Huang et al., The impacts of control gate voltage on the cycling endurance of split gateflash memory, IEEE ELEC D, 21(7), 2000, pp. 359-361
Authors:
Yaung, DN
Fang, YK
Huang, KC
Chen, CY
Wang, YJ
Hung, CC
Wuu, SG
Liang, MS
Citation: Dn. Yaung et al., Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress, SEMIC SCI T, 15(9), 2000, pp. 888-891
Authors:
Yaung, DN
Fang, YK
Huang, KC
Wang, YJ
Hung, CC
Liang, MS
Wuu, SG
Citation: Dn. Yaung et al., The punchthrough phenomena in submicron polysilicon thin-film transistors, SEMIC SCI T, 15(2), 2000, pp. 225-228
Authors:
Yaung, DN
Fang, YK
Huang, KC
Chen, CY
Wang, YJ
Hung, CC
Wuu, SG
Liang, MS
Citation: Dn. Yaung et al., High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM, SOL ST ELEC, 44(11), 2000, pp. 1997-2000
Authors:
Huang, KC
Fang, YK
Yaung, DN
Hsieh, JC
Liang, MS
Citation: Kc. Huang et al., Effects of tungsten polycide process and post-polyoxidation rapid thermal process on electrical characteristics of thin polysilicon oxide, JPN J A P 2, 38(10A), 1999, pp. L1091-L1093
Authors:
Huang, KC
Fang, YK
Yaung, DN
Chen, CW
Sung, HC
Kuo, DS
Wang, CS
Liang, MS
Citation: Kc. Huang et al., Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory, IEEE ELEC D, 20(8), 1999, pp. 412-414
Authors:
Huang, KC
Fang, YK
Yaung, DN
Chen, CW
Liang, MS
Hsieh, JC
Su, CW
Lee, KY
Citation: Kc. Huang et al., Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors, IEEE ELEC D, 20(1), 1999, pp. 36-38
Authors:
Huang, KC
Fang, YK
Yaung, DN
Chen, CW
Sung, HC
Kuo, D
Wang, CS
Liang, MS
Citation: Kc. Huang et al., Influence of source coupling on the programming and degradation mechanismsof split-gate flash memory devices, SEMIC SCI T, 14(12), 1999, pp. 1021-1025
Authors:
Yaung, DN
Fang, YK
Huang, KC
Wuu, SG
Wang, CS
Liang, MS
Citation: Dn. Yaung et al., Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact, ELECTR LETT, 35(24), 1999, pp. 2148-2149
Authors:
Huang, KC
Fang, YK
Yaung, DN
Kuo, DS
Wang, CS
Liang, MS
Citation: Kc. Huang et al., Improved programming performance of EEPROM/flash cell using post-poly-Si gate N2O annealing, ELECTR LETT, 35(13), 1999, pp. 1112-1114
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