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Results: 1-25/41
Authors:
Jeon, YA
Seo, TS
Yoon, SG
Citation: Ya. Jeon et al., Effect of Ni doping on improvement of the tunability and dielectric loss of Ba0.5Sr0.5TiO3 thin films for microwave tunable devices, JPN J A P 1, 40(11), 2001, pp. 6496-6500
Authors:
Shin, WC
Yang, JH
Choi, KJ
Jeon, YA
Yoon, SG
Citation: Wc. Shin et al., Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition, J VAC SCI B, 19(1), 2001, pp. 239-243
Authors:
Choi, KJ
Shin, WC
Yoon, SG
Citation: Kj. Choi et al., Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD, INTEGR FERR, 34(1-4), 2001, pp. 1541-1551
Authors:
Yoon, SG
Kingon, AI
Kim, SH
Citation: Sg. Yoon et al., Electrical properties of Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films with various iridium-based top electrodes, INTEGR FERR, 33(1-4), 2001, pp. 155-164
Authors:
Choi, ES
Park, JB
Yoon, SG
Citation: Es. Choi et al., Integration of Pt/Ru bottom electrode structures onto polycrystalline silicon by MOCVD, CHEM VAPOR, 7(6), 2001, pp. 260-264
Authors:
Ahns, SJ
Yoon, CS
Yoon, SG
Kim, CK
Byun, TY
Hong, KS
Citation: Sj. Ahns et al., Domain structure of polycrystalline MnZn ferrites, MAT SCI E B, 84(3), 2001, pp. 146-154
Authors:
Yoon, SG
Wicaksana, D
Kim, DJ
Kim, SH
Kingon, AI
Citation: Sg. Yoon et al., Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes, J MATER RES, 16(4), 2001, pp. 1185-1189
Authors:
Choi, KJ
Shin, WC
Yoon, SG
Citation: Kj. Choi et al., Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors, THIN SOL FI, 384(1), 2001, pp. 146-150
Authors:
Park, SS
Yoon, SG
Citation: Ss. Park et Sg. Yoon, Structure and electrical properties of sputter deposited (Ba1-x,Sr-x) (Ti1-y,Zr-y)O-3 thin films, J ELCHEM SO, 148(8), 2001, pp. F155-F158
Authors:
Yoon, SG
Kingon, AI
Citation: Sg. Yoon et Ai. Kingon, Recovery characteristics of hydrogen-damaged (Pb,La)(Zr,Ti)O-3 capacitors with Pt and IrO2 top electrodes, J ELCHEM SO, 148(7), 2001, pp. F137-F139
Authors:
Lee, EM
Shin, WC
Choi, YS
Yoon, SG
Citation: Em. Lee et al., Diffusion barrier characteristics of TaSiN for Pt/TaSiN/Poly-Si electrode structure of semiconductor memory device, J ELCHEM SO, 148(11), 2001, pp. G611-G615
Authors:
Shin, WC
Yoon, SG
Citation: Wc. Shin et Sg. Yoon, Compositional control of ferroelectric SrBi2Ta2O9 thin films by liquid delivery MOCVD using a single cocktail of Sr[Ta(OEt)(5)(dmae)](2) and Bi(C6H5)(3), J ELCHEM SO, 148(11), 2001, pp. C762-C766
Authors:
Jeon, YA
Choi, ES
Seo, TS
Yoon, SG
Citation: Ya. Jeon et al., Improvements in tunability of (Ba0.5Sr0.5)TiO3 thin films by use of metalorganic chemical vapor deposited (Ba,Sr)RuO3 interfacial layers, APPL PHYS L, 79(7), 2001, pp. 1012-1014
Authors:
Shin, WC
Yoon, SG
Citation: Wc. Shin et Sg. Yoon, Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition, APPL PHYS L, 79(10), 2001, pp. 1519-1521
Authors:
Choi, ES
Yoon, SG
Lee, WJ
Citation: Es. Choi et al., Improvements in electrical properties of hydrogen-treated SrBi2Ta2O9 capacitors with chemical vapor deposited Pt top electrode, APPL PHYS L, 78(14), 2001, pp. 2040-2042
Authors:
Park, SS
Yoon, SG
Citation: Ss. Park et Sg. Yoon, Effects of chamber pressure on composition and electrical properties of Zr-modified (Ba1-x,Sr-x)TiO3 thin films grown by sputtering, JPN J A P 2, 39(11B), 2000, pp. L1177-L1179
Authors:
Ku, JH
Cho, HH
Koo, JH
Yoon, SG
Lee, JK
Citation: Jh. Ku et al., Heat transfer characteristics of liquid-solid suspension flow in a horizontal pipe, KSME INT J, 14(10), 2000, pp. 1159-1167
Authors:
Kim, JS
Yoon, SG
Citation: Js. Kim et Sg. Yoon, High dielectric constant (Ba0.65Sr0.35)(Ti0.41Zr0.59)O-3 capacitors for Gbit-scale dynamic random access memory devices, J VAC SCI B, 18(1), 2000, pp. 216-220
Authors:
Choi, ES
Yang, JH
Park, JB
Yoon, SG
Citation: Es. Choi et al., Integration of Pt/Ru electrode structures by metalorganic chemical-vapor deposition on poly-Si/SiO2/Si, J VAC SCI B, 18(1), 2000, pp. 262-266
Authors:
Choi, ES
Shin, WC
Suh, TS
Park, SS
Yoon, SG
Citation: Es. Choi et al., Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor, INTEGR FERR, 31(1-4), 2000, pp. 297-304
Authors:
Shin, WC
Choi, KJ
Choi, ES
Park, CM
Yoon, SG
Citation: Wc. Shin et al., Ferroelectric SrBi2Ta2O9 thin films deposited by liquid injection MOCVD using novel bimetallic alkoxide precursor, INTEGR FERR, 30(1-4), 2000, pp. 27-36
Authors:
Yoon, SG
Kingon, AI
Kim, SH
Citation: Sg. Yoon et al., Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes, J APPL PHYS, 88(11), 2000, pp. 6690-6695
Authors:
Choi, ES
Hwang, JS
Yoon, SG
Citation: Es. Choi et al., Contact properties of Pt/RuO2/Ru electrode structure integrated on polycrystalline silicon, J ELCHEM SO, 147(6), 2000, pp. 2340-2342
Authors:
Choi, ES
Lee, JC
Hwang, JS
Yoon, SG
Citation: Es. Choi et al., Bottom electrode structures of Pt/RuO2/Ru on polycrystalline silicon for low temperature (Ba,Sr)TiO3 thin film deposition, JPN J A P 1, 38(9B), 1999, pp. 5317-5321
The correlation between composition and preferred orientation of ferroelectric SrBi2Ta2O9 thin films
Authors:
Yang, CH
Yoon, SG
Choi, WY
Kim, HG
Citation: Ch. Yang et al., The correlation between composition and preferred orientation of ferroelectric SrBi2Ta2O9 thin films, EL SOLID ST, 2(1), 1999, pp. 39-42