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Results:
1-13
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Results: 13
Authors:
MAJEWSKI JA
ZANDLER G
VOGL P
Citation: Ja. Majewski et al., STABILITY AND BAND OFFSETS OF ALN GAN HETEROSTRUCTURES - IMPACT ON DEVICE PERFORMANCE/, Semiconductor science and technology, 13(8A), 1998, pp. 90-92
Authors:
SARANITI M
ZANDLER G
FORMICONE G
WIGGER S
GOODNICK S
Citation: M. Saraniti et al., CELLULAR-AUTOMATA SIMULATION OF NANOMETER-SCALE MOSFETS, Semiconductor science and technology, 13(8A), 1998, pp. 177-179
Authors:
DICARLO A
LUGLI P
CANALI C
MALIK R
MANFREDI M
NEVIANI A
ZANONI E
ZANDLER G
Citation: A. Dicarlo et al., A COMBINED MONTE-CARLO AND EXPERIMENTAL-ANALYSIS OF LIGHT-EMISSION PHENOMENA IN ALGAAS GAAS HBTS/, Semiconductor science and technology, 13(8), 1998, pp. 858-863
Authors:
OBERHUBER R
ZANDLER G
VOGL P
Citation: R. Oberhuber et al., SUBBAND STRUCTURE AND MOBILITY OF 2-DIMENSIONAL HOLES IN STRAINED SI SIGE MOSFETS/, Physical review. B, Condensed matter, 58(15), 1998, pp. 9941-9948
Authors:
OBERHUBER R
ZANDLER G
VOGL P
Citation: R. Oberhuber et al., MOBILITY OF 2-DIMENSIONAL ELECTRONS IN ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Applied physics letters, 73(6), 1998, pp. 818-820
Authors:
BRATSCHITSCH R
FISCHLER W
HOPFEL R
ZANDLER G
Citation: R. Bratschitsch et al., COHERENT THZ PLASMONS IN GAAS - TRANSITION FROM PURE PLASMONS TO COUPLED PLASMON-PHONON MODES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 64-66
Authors:
ZANDLER G
MAJEWSKI JA
STADELE M
VOGL P
COMPAGNONE F
Citation: G. Zandler et al., PROSPECTS OF GA IN/AL-N NANOMETER DEVICES - ELECTRONIC-STRUCTURE, SCATTERING RATES, AND HIGH-FIELD TRANSPORT/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 133-135
Authors:
SARANITI M
REIN A
ZANDLER G
VOGL P
LUGLI P
Citation: M. Saraniti et al., AN EFFICIENT MULTIGRID POISSON SOLVER FOR DEVICE SIMULATIONS, IEEE transactions on computer-aided design of integrated circuits and systems, 15(2), 1996, pp. 141-150
Authors:
CANALI C
PAVAN P
DICARLO A
LUGLI P
MALIK R
MANFREDI M
NEVIANI A
VENDRAME L
ZANONI E
ZANDLER G
Citation: C. Canali et al., EXPERIMENTAL AND MONTE-CARLO ANALYSIS OF IMPACT-IONIZATION IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1769-1777
Authors:
FISCHLER W
BUCHBERGER P
HOPFEL RA
ZANDLER G
Citation: W. Fischler et al., ULTRAFAST REFLECTIVITY CHANGES IN PHOTOEXCITED GAAS SCHOTTKY DIODES, Applied physics letters, 68(20), 1996, pp. 2778-2780
Authors:
ZANDLER G
DICARLO A
VOGL P
LUGLI P
Citation: G. Zandler et al., MONTE-CARLO SIMULATION OF MINORITY-CARRIER TRANSPORT AND LIGHT-EMISSION PHENOMENA IN GAAS DEVICES, Semiconductor science and technology, 9(5), 1994, pp. 666-670
Authors:
WIRNER C
WITZANY M
KIENER C
ZANDLER G
BOHM G
GORNIK E
VOGL P
WEIMANN G
Citation: C. Wirner et al., EXPERIMENTAL AND THEORETICAL INVESTIGATION OF THE DRIFT VELOCITY AND VELOCITY DISTRIBUTION FUNCTION IN GAAS ALGAAS HETEROSTRUCTURES/, Semiconductor science and technology, 7(3B), 1992, pp. 267-270
Authors:
KOMETER K
ZANDLER G
VOGL P
Citation: K. Kometer et al., CELLULAR AUTOMATA SIMULATION OF STATIONARY AND TRANSIENT HIGH-FIELD TRANSPORT IN SUBMICRON SI AND GAAS DEVICES, Semiconductor science and technology, 7(3B), 1992, pp. 559-563
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