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Results: 1-12 |
Results: 12
THE DX CENTER IN GAASP ALLOYS
Authors: BENSALEM MM ZAIDI MA ZAZOUI M BOURGOIN JC
Citation: Mm. Bensalem et al., THE DX CENTER IN GAASP ALLOYS, Physica status solidi. b, Basic research, 209(2), 1998, pp. 363-374
THE METASTABILITY OF DEEP DONOR DEFECTS IN SEMICONDUCTOR COMPOUNDS
Authors: BOURGOIN JC ZAZOUI M ALAYA S NEFFATI T
Citation: Jc. Bourgoin et al., THE METASTABILITY OF DEEP DONOR DEFECTS IN SEMICONDUCTOR COMPOUNDS, Journal de physique. III, 7(11), 1997, pp. 2145-2151
RECOMBINATION CENTERS IN ELECTRON-IRRADIATED CZOCHRALSKI SILICON SOLAR-CELLS
Authors: ZAZOUI M BOURGOIN JC STIEVENARD D DERESMES D STROBL G
Citation: M. Zazoui et al., RECOMBINATION CENTERS IN ELECTRON-IRRADIATED CZOCHRALSKI SILICON SOLAR-CELLS, Journal of applied physics, 76(2), 1994, pp. 815-819
ELECTRONIC TRANSPORT THROUGH SEMICONDUCTOR BARRIERS
Authors: CHAABANE H ZAZOUI M BOURGOIN JC DONCHEV V
Citation: H. Chaabane et al., ELECTRONIC TRANSPORT THROUGH SEMICONDUCTOR BARRIERS, Semiconductor science and technology, 8(12), 1993, pp. 2077-2084
CHARGE OF THE DX GROUND-STATE IN GA1-XALXAS
Authors: BOURGOIN JC ZAZOUI M
Citation: Jc. Bourgoin et M. Zazoui, CHARGE OF THE DX GROUND-STATE IN GA1-XALXAS, Physical review. B, Condensed matter, 47(23), 1993, pp. 15939-15941
DEFECTS IN ELECTRON-IRRADIATED N-TYPE GAP
Authors: ZAIDI MA ZAZOUI M BOURGOIN JC
Citation: Ma. Zaidi et al., DEFECTS IN ELECTRON-IRRADIATED N-TYPE GAP, Journal of applied physics, 74(8), 1993, pp. 4948-4952
RECOMBINATION CENTERS IN CZOCHRALSKI-GROWN P-SI
Authors: ZAZOUI M ZAIDI MA BOURGOIN JC STROBL G
Citation: M. Zazoui et al., RECOMBINATION CENTERS IN CZOCHRALSKI-GROWN P-SI, Journal of applied physics, 74(6), 1993, pp. 3944-3947
DEFECTS IN EPITAXIAL SI-DOPED GAINP
Authors: KRYNICKI J ZAIDI MA ZAZOUI M BOURGOIN JC DIFORTEPOISSON M BRYLINSKI C DELAGE SL BLANCK H
Citation: J. Krynicki et al., DEFECTS IN EPITAXIAL SI-DOPED GAINP, Journal of applied physics, 74(1), 1993, pp. 260-266
DEFECTS IN ELECTRON-IRRADIATED GAALAS ALLOYS
Authors: ZAIDI MA MAAREF H ZAZOUI M BOURGOIN JC
Citation: Ma. Zaidi et al., DEFECTS IN ELECTRON-IRRADIATED GAALAS ALLOYS, Journal of applied physics, 74(1), 1993, pp. 284-290
ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS
Authors: FENG SL KRYNICKI J ZAZOUI M BOURGOIN JC BOIS P ROSENCHER E
Citation: Sl. Feng et al., ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS, Journal of applied physics, 74(1), 1993, pp. 341-345
DEFECTS IN ELECTRON-IRRADIATED GAINP
Authors: ZAIDI MA ZAZOUI M BOURGOIN JC
Citation: Ma. Zaidi et al., DEFECTS IN ELECTRON-IRRADIATED GAINP, Journal of applied physics, 73(11), 1993, pp. 7229-7231
ELECTRIC-FIELD EFFECT ON ELECTRON-EMISSION FROM THE DX CENTER IN GAALAS
Authors: ZAZOUI M FENG SL BOURGOIN JC
Citation: M. Zazoui et al., ELECTRIC-FIELD EFFECT ON ELECTRON-EMISSION FROM THE DX CENTER IN GAALAS, Semiconductor science and technology, 6(10), 1991, pp. 973-978
Risultati: 1-12 |