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Results: 1-24 |
Results: 24
INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: ELMEKKI MB PASCUAL J ANDROULIDAKI M ZEKENTES K CAMASSEL J STOEMENOS J
Citation: Mb. Elmekki et al., INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, DIAMOND AND RELATED MATERIALS, 6(12), 1997, pp. 1772-1776
TOPOLOGY OF TWIN JUNCTIONS IN EPITAXIAL BETA-SIC
Authors: PAPAIOANNOU V KOMNINOU P DIMITRAKOPULOS GP ZEKENTES K PECZ B KARAKOSTAS T STOEMENOS J
Citation: V. Papaioannou et al., TOPOLOGY OF TWIN JUNCTIONS IN EPITAXIAL BETA-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1362-1364
FIRST EUROPEAN CONFERENCE ON SILICON-CARBIDE AND RELATED MATERIALS (ECSCRM 1996) - PREFACE
Authors: ZEKENTES K
Citation: K. Zekentes, FIRST EUROPEAN CONFERENCE ON SILICON-CARBIDE AND RELATED MATERIALS (ECSCRM 1996) - PREFACE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, p.
HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION
Authors: CONSTANTINIDIS G KORNILIOS N ZEKENTES K STOEMENOS J DICIOCCIO L
Citation: G. Constantinidis et al., HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 176-179
DIFFUSION OF GOLD IN 3C-SIC EPITAXIALLY GROWN ON SI - STRUCTURAL CHARACTERIZATION
Authors: KORNILIOS N CONSTANTINIDIS G KAYIAMBAKI M ZEKENTES K STOEMENOS J
Citation: N. Kornilios et al., DIFFUSION OF GOLD IN 3C-SIC EPITAXIALLY GROWN ON SI - STRUCTURAL CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 186-189
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES
Authors: ZEKENTES K BECOURT N ANDROULIDAKI M TSAGARAKI K STOEMENOS J BLUET JM CAMASSEL J PASCUAL J
Citation: K. Zekentes et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES, Applied surface science, 102, 1996, pp. 22-27
WEAK ANTILOCALIZATION AND SPIN PRECESSION IN QUANTUM-WELLS
Authors: KNAP W SKIERBISZEWSKI C ZDUNIAK A LITWINSTASZEWSKA E BERTHO D KOBBI F ROBERT JL PIKUS GE PIKUS FG IORDANSKII SV MOSSER V ZEKENTES K LYANDAGELLER YB
Citation: W. Knap et al., WEAK ANTILOCALIZATION AND SPIN PRECESSION IN QUANTUM-WELLS, Physical review. B, Condensed matter, 53(7), 1996, pp. 3912-3924
CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: ZEKENTES K CALLEC R TSAGARAKI K SAGNES B ARNAUD G PASCUAL J CAMASSEL J
Citation: K. Zekentes et al., CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 138-141
WEAK ANTILOCALIZATION IN QUANTUM-WELLS
Authors: KNAP W SKIERBISZEWSKI C LITWINSTASZEWSKA E KOBBI F ZDUNIAK A ROBERT JL PIKUS GE IORDANSKII SV MOSSER V ZEKENTES K
Citation: W. Knap et al., WEAK ANTILOCALIZATION IN QUANTUM-WELLS, Acta Physica Polonica. A, 87(2), 1995, pp. 427-432
EARLY STAGES OF GROWTH OF BETA-SIC ON SI BY MBE
Authors: ZEKENTES K PAPAIOANNOU V PECZ B STOEMENOS J
Citation: K. Zekentes et al., EARLY STAGES OF GROWTH OF BETA-SIC ON SI BY MBE, Journal of crystal growth, 157(1-4), 1995, pp. 392-399
ELECTRON TRAPS IN BETA-SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION ON SILICON(100) SUBSTRATES
Authors: ZEKENTES K KAYIAMBAKI M CONSTANTINIDIS G
Citation: K. Zekentes et al., ELECTRON TRAPS IN BETA-SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION ON SILICON(100) SUBSTRATES, Applied physics letters, 66(22), 1995, pp. 3015-3017
HIGH-SENSITIVITY HALL SENSORS WITH LOW THERMAL DRIFT USING ALGAAS INGAAS/GAAS HETEROSTRUCTURES/
Authors: MOSSER V CONTRERAS S ABOULHOUDA S LORENZINI P KOBBI F ROBERT JL ZEKENTES K
Citation: V. Mosser et al., HIGH-SENSITIVITY HALL SENSORS WITH LOW THERMAL DRIFT USING ALGAAS INGAAS/GAAS HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 43(1-3), 1994, pp. 135-140
TEM ANALYSIS OF INGAAS INALAS EPITAXIAL LAYERS GROWN OVER INP PATTERNED SUBSTRATES/
Authors: PEIRO F CORNET A MORANTE JR ZEKENTES K GEORGAKILAS A
Citation: F. Peiro et al., TEM ANALYSIS OF INGAAS INALAS EPITAXIAL LAYERS GROWN OVER INP PATTERNED SUBSTRATES/, Materials letters, 21(5-6), 1994, pp. 371-375
DETERMINATION OF THE BASIC PARAMETERS OF PSEUDOMORPHIC GAINAS QUANTUM-WELLS BY MEANS OF SIMULTANEOUS TRANSPORT AND OPTICAL INVESTIGATIONS
Authors: LITWINSTASZEWSKA E KOBBI F KAMALSAADI M DUR D SKIERBISZEWSKI C SIBARI H ZEKENTES K MOSSER V RAYMOND A KNAP W ROBERT JL
Citation: E. Litwinstaszewska et al., DETERMINATION OF THE BASIC PARAMETERS OF PSEUDOMORPHIC GAINAS QUANTUM-WELLS BY MEANS OF SIMULTANEOUS TRANSPORT AND OPTICAL INVESTIGATIONS, Solid-state electronics, 37(4-6), 1994, pp. 665-667
ELECTRICAL-TRANSPORT QUANTUM EFFECTS IN THE IN0.53GA0.47AS IN0.52AL0.48AS HETEROSTRUCTURE ON SILICON/
Authors: GEORGAKILAS A CHRISTOU A ZEKENTES K MERCY JM KONCZEWICZ LK VILA A CORNET A
Citation: A. Georgakilas et al., ELECTRICAL-TRANSPORT QUANTUM EFFECTS IN THE IN0.53GA0.47AS IN0.52AL0.48AS HETEROSTRUCTURE ON SILICON/, Journal of applied physics, 76(3), 1994, pp. 1948-1952
OSCILLATOR STRENGTH OF THE E1HH1 EXCITONIC-TRANSITION AS A FUNCTION OF MAGNETIC-FIELD IN MODULATION-DOPED GAALAS GAAS QUANTUM-WELL/
Authors: VICENTE P KAVOKIN AV RAYMOND A LYAPIN SG ZEKENTES K DUR D KNAP W
Citation: P. Vicente et al., OSCILLATOR STRENGTH OF THE E1HH1 EXCITONIC-TRANSITION AS A FUNCTION OF MAGNETIC-FIELD IN MODULATION-DOPED GAALAS GAAS QUANTUM-WELL/, Journal de physique. IV, 3(C5), 1993, pp. 323-326
PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
Authors: KALBOUSSI A MARRAKCHI G TABATA A GUILLOT G HALKIAS G ZEKENTES K GEORGAKILAS A CRISTOU A
Citation: A. Kalboussi et al., PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 93-96
ROOM-TEMPERATURE PHOTOREFLECTANCE AS A POWERFUL TOOL TO CHARACTERIZE THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES
Authors: MONEGER S TABATA A BRU C GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., ROOM-TEMPERATURE PHOTOREFLECTANCE AS A POWERFUL TOOL TO CHARACTERIZE THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 177-180
MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY
Authors: ZEKENTES K HALKIAS G DIMOULAS A TABATA A BENYATTOU T GUILLOT G MORANTE JR PEIRO F CORNET A GEORGAKILAS A CHRISTOU A
Citation: K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS
Authors: MONEGER S BALTAGI Y BENYATTOU T TABATA A RAGOT B GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS, Journal of applied physics, 74(2), 1993, pp. 1437-1439
FREQUENCY-RESOLVED ADMITTANCE MEASUREMENTS ON INAIAS INGAAS/INAIAS SINGLE-QUANTUM WELLS TO DETERMINE THE CONDUCTION-BAND OFFSET AND THE CAPTURE COEFFICIENT/
Authors: LOPEZVILLEGAS JM ROURA P BOSCH J MORANTE JR GEORGAKILAS A ZEKENTES K
Citation: Jm. Lopezvillegas et al., FREQUENCY-RESOLVED ADMITTANCE MEASUREMENTS ON INAIAS INGAAS/INAIAS SINGLE-QUANTUM WELLS TO DETERMINE THE CONDUCTION-BAND OFFSET AND THE CAPTURE COEFFICIENT/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1492-1495
A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/
Authors: GEORGAKILAS A HALKIAS G CHRISTOU A KORNILIOS N PAPAVASSILIOU C ZEKENTES K KONSTANTINIDIS G PEIRO F CORNET A ABABOU S TABATA A GUILLOT G
Citation: A. Georgakilas et al., A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1503-1509
ROOM-TEMPERATURE PHOTOREFLECTANCE AS AN EFFICIENT TOOL FOR STUDY OF THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES
Authors: MONEGER S TABATA A BRU C GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., ROOM-TEMPERATURE PHOTOREFLECTANCE AS AN EFFICIENT TOOL FOR STUDY OF THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES, Applied physics letters, 63(12), 1993, pp. 1654-1656
DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/
Authors: DIMOULAS A ZEKENTES K ANDROULIDAKI M KORNELIOS N MICHELAKIS C HATZOPOULOS Z
Citation: A. Dimoulas et al., DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Applied physics letters, 63(10), 1993, pp. 1417-1419
Risultati: 1-24 |