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Results: 1-25 | 26-50 | 51-72
Results: 1-25/72
SPONTANEOUS LONG-WAVELENGTH INTERLEVEL EMISSION IN QUANTUM-DOT LASER STRUCTURES
Authors: VOROBEV LE FIRSOV DA SHALYGIN VA TULUPENKO VN SHERNYAKOV YM EGOROV AY ZHUKOV AE KOVSH AR KOPEV PS KOCHNEV IV LEDENTSOV NN MAKSIMOV MV USTINOV VM ALFEROV ZI
Citation: Le. Vorobev et al., SPONTANEOUS LONG-WAVELENGTH INTERLEVEL EMISSION IN QUANTUM-DOT LASER STRUCTURES, Technical physics letters, 24(8), 1998, pp. 590-592
LASING IN SUBMONOLAYER INAS ALGAAS STRUCTURES WITHOUT EXTERNAL OPTICAL CONFINEMENT/
Authors: VOLOVIK BV TSATSULNIKOV AF LEDENTSOV NN MAKSIMOV MV SAKHAROV AV EGOROV AY ZHUKOV AE KOVSH AR USTINOV VM KOPEV PS ALFEROV ZI KOZIN IE BELOUSOV MV BIMBERG D
Citation: Bv. Volovik et al., LASING IN SUBMONOLAYER INAS ALGAAS STRUCTURES WITHOUT EXTERNAL OPTICAL CONFINEMENT/, Technical physics letters, 24(7), 1998, pp. 567-569
OPERATING CHARACTERISTICS AND THEIR ANISOTROPY IN A HIGH-POWER LASER (1.5 W, 300 K) WITH A QUANTUM-DOT ACTIVE-REGION
Authors: SHERNYAKOV YM EGOROV AY VOLOVIK BV ZHUKOV AE KOVSH AR LUNEV AV LEDENTSOV NN MAKSIMOV MV SAKHAROV AV USTINOV VM ZHAO Z KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ym. Shernyakov et al., OPERATING CHARACTERISTICS AND THEIR ANISOTROPY IN A HIGH-POWER LASER (1.5 W, 300 K) WITH A QUANTUM-DOT ACTIVE-REGION, Technical physics letters, 24(5), 1998, pp. 351-353
LOW-THRESHOLD QUANTUM-DOT INJECTION HETEROLASER EMITTING AT 1.84 MU-M
Authors: USTINOV VM KOVSH AR ZHUKOV AE EGOROV AY LEDENTSOV NN LUNEV AV SHERNYAKOV YM MAKSIMOV MV TSATSULNIKOV AF VOLOVIK BV KOPEV PS ALFEROV ZI
Citation: Vm. Ustinov et al., LOW-THRESHOLD QUANTUM-DOT INJECTION HETEROLASER EMITTING AT 1.84 MU-M, Technical physics letters, 24(1), 1998, pp. 22-23
OPTICAL ORIENTATION AND ALIGNMENT OF EXCITONS IN QUANTUM DOTS
Authors: DZHIOEV RI ZAKHARCHENYA BP IVCHENKO EL KORENEV VL KUSRAEV YG LEDENTSOV NN USTINOV VM ZHUKOV AE TSATSULNIKOV AF
Citation: Ri. Dzhioev et al., OPTICAL ORIENTATION AND ALIGNMENT OF EXCITONS IN QUANTUM DOTS, Physics of the solid state, 40(5), 1998, pp. 790-793
EFFECT OF THE QUANTUM-DOT SURFACE-DENSITY IN THE ACTIVE-REGION ON INJECTION-LASER CHARACTERISTICS
Authors: KOVSH AR ZHUKOV AE EGOROV AY USTINOV VM SHERNYAKOV YM MAKSIMOV MV TSATSULNIKOV AF VOLOVIK BV LUNEV AV LEDENTSOV NN KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ar. Kovsh et al., EFFECT OF THE QUANTUM-DOT SURFACE-DENSITY IN THE ACTIVE-REGION ON INJECTION-LASER CHARACTERISTICS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 997-1000
POWERFUL FAR-INFRARED RADIATION OF HOT HOLES IN A STRAINED 2-DIMENSIONAL INGAAS ALGAAS STRUCTURE/
Authors: IVANOV YL MOROZOV SA USTINOV VM ZHUKOV AE
Citation: Yl. Ivanov et al., POWERFUL FAR-INFRARED RADIATION OF HOT HOLES IN A STRAINED 2-DIMENSIONAL INGAAS ALGAAS STRUCTURE/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1001-1002
INVESTIGATION OF THE DEVICE CHARACTERISTICS OF A LOW-THRESHOLD QUANTUM-DOT LASER EMITTING AT 1.9 MU-M
Authors: ZHUKOV AE EGOROV AY KOVSH AR USTINOV VM ZAITSEV SV GORDEEV NY KOPCHATOV VI LUNEV AV TSATSULNIKOV AF VOLOVIK BV LEDENTSOV NN KOPEV PS
Citation: Ae. Zhukov et al., INVESTIGATION OF THE DEVICE CHARACTERISTICS OF A LOW-THRESHOLD QUANTUM-DOT LASER EMITTING AT 1.9 MU-M, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 795-797
CAPACITANCE-VOLTAGE PROFILING OF AU N-GAAS SCHOTTKY-BARRIER STRUCTURES CONTAINING A LAYER OF SELF-ORGANIZED INAS QUANTUM DOTS/
Authors: BRUNKOV PN SUVOROVA AA BERT NA KOVSH AR ZHUKOV AE EGOROV AY USTINOV VM TSATSULNIKOV AF LEDENTSOV NN KOPEV PS KONNIKOV SG EAVES L MAIN PS
Citation: Pn. Brunkov et al., CAPACITANCE-VOLTAGE PROFILING OF AU N-GAAS SCHOTTKY-BARRIER STRUCTURES CONTAINING A LAYER OF SELF-ORGANIZED INAS QUANTUM DOTS/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1096-1100
FORMATION OF INAS QUANTUM DOTS IN A GAAS MATRIX DURING GROWTH ON MISORIENTED SUBSTRATES
Authors: TSATSULNIKOV AF VOLOVIK BV LEDENTSOV NN MAKSIMOV MV EGOROV AY ZHUKOV AE KOVSH AR USTINOV VM CHEN C KOPEV PS ALFEROV ZI PETROV VN TSIRLIN GE BIMBERG D
Citation: Af. Tsatsulnikov et al., FORMATION OF INAS QUANTUM DOTS IN A GAAS MATRIX DURING GROWTH ON MISORIENTED SUBSTRATES, Semiconductors, 32(1), 1998, pp. 84-89
ELECTRON-ESCAPE FROM SELF-ASSEMBLED INAS GAAS QUANTUM-DOT STACKS/
Authors: BROUNKOV PN SUVOROVA AA MAXIMOV MV TSATSULNIKOV AF ZHUKOV AE EGOROV AY KOVSH AR KONNIKOV SG IHN T STODDART ST EAVES L MAIN PC
Citation: Pn. Brounkov et al., ELECTRON-ESCAPE FROM SELF-ASSEMBLED INAS GAAS QUANTUM-DOT STACKS/, Physica. B, Condensed matter, 251, 1998, pp. 267-270
INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX
Authors: ZHUKOV AE USTINOV VM EGOROV AY KOVSH AR TSATSULNIKOV AF MAXIMOV MV LEDENTSOV NN ZAITSEV SV GORDEEV NY KOPCHATOV VI SHERNYAKOV YM KOPEV PS BIMBERG D ALFEROV ZI
Citation: Ae. Zhukov et al., INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX, Journal of electronic materials, 27(3), 1998, pp. 106-109
FORMATION OF INAS QUANTUM DOTS ON A SILICON(100) SURFACE
Authors: CIRLIN GE DUBROVSKII VG PETROV VN POLYAKOV NK KORNEEVA NP DEMIDOV VN GOLUBOK AO MASALOV SA KUROCHKIN DV GORBENKO OM KOMYAK NI USTINOV VM EGOROV AY KOVSH AR MAXIMOV MV TSATSULNIKOV AF VOLOVIK BV ZHUKOV AE KOPEV PS ALFEROV ZI LEDENTSOV NN GRUNDMANN M BIMBERG D
Citation: Ge. Cirlin et al., FORMATION OF INAS QUANTUM DOTS ON A SILICON(100) SURFACE, Semiconductor science and technology (Print), 13(11), 1998, pp. 1262-1265
OPTICAL-PROPERTIES OF INALAS QUANTUM DOTS IN AN ALGAAS MATRIX
Authors: TSATSULNIKOV AF EGOROV AY KOPEV PS KOVSH AR LEDENTSOV NN MAXIMOV MV SUVOROVA AA USTINOV VM VOLOVIK BV ZHUKOV AE GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Af. Tsatsulnikov et al., OPTICAL-PROPERTIES OF INALAS QUANTUM DOTS IN AN ALGAAS MATRIX, Applied surface science, 123, 1998, pp. 381-384
LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS
Authors: TSATSULNIKOV AF BELOUSOV MV BERT NA EGOROV AY KOPEV PS KOVSH AR KRESTNIKOV IL LEDENTSOV NN MAXIMOV MV SUVOROVA AA USTINOV VM VOLOVIK BV ZHUKOV AE GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Af. Tsatsulnikov et al., LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 37-43
A THERMODYNAMIC ANALYSIS OF THE GROWTH OF III-V COMPOUNDS WITH 2 VOLATILE GROUP-V ELEMENTS BY MOLECULAR-BEAM EPITAXY
Authors: EGOROV AY KOVSH AR USTINOV VM ZHUKOV AE KOPEV PS TU CW
Citation: Ay. Egorov et al., A THERMODYNAMIC ANALYSIS OF THE GROWTH OF III-V COMPOUNDS WITH 2 VOLATILE GROUP-V ELEMENTS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 69-74
HIGH-POWER CONTINUOUS-WAVE OPERATION OF A INGAAS ALGAAS QUANTUM-DOT LASER/
Authors: MAXIMOV MV SHERNYAKOV YM TSATSULNIKOV AF LUNEV AV SAKHAROV AV USTINOV VM EGOROV AY ZHUKOV AE KOVSH AR KOPEV PS ASRYAN LV ALFEROV ZI LEDENTSOV NN BIMBERG D KOSOGOV AO WERNER P
Citation: Mv. Maximov et al., HIGH-POWER CONTINUOUS-WAVE OPERATION OF A INGAAS ALGAAS QUANTUM-DOT LASER/, Journal of applied physics, 83(10), 1998, pp. 5561-5563
LOW-THRESHOLD QUANTUM-DOT INJECTION-LASER EMITTING AT 1.9-MU-M
Authors: USTINOV VM ZHUKOV AE EGOROV AY KOVSH AR ZAITSEV SV GORDEEV NY KOPCHATOV VI LEDENTSOV HN TSATSULNIKOV AF VOLOVIK BV KOPEV PS ALFEROV ZI RUVIMOV SS LILIENTALWEBER Z BIMBERG D
Citation: Vm. Ustinov et al., LOW-THRESHOLD QUANTUM-DOT INJECTION-LASER EMITTING AT 1.9-MU-M, Electronics Letters, 34(7), 1998, pp. 670-672
EFFECT OF MATRIX ON INAS SELF-ORGANIZED QUANTUM DOTS ON INP SUBSTRATE
Authors: USTINOV VM WEBER ER RUVIMOV S LILIENTALWEBER Z ZHUKOV AE EGOROV AY KOVSH AR TSATSULNIKOV AF KOPEV PS
Citation: Vm. Ustinov et al., EFFECT OF MATRIX ON INAS SELF-ORGANIZED QUANTUM DOTS ON INP SUBSTRATE, Applied physics letters, 72(3), 1998, pp. 362-364
NEGATIVE CHARACTERISTIC TEMPERATURE OF INGAAS QUANTUM-DOT INJECTION-LASER
Authors: ZHUKOV AE USTINOV VM EGOROV AY KOVSH AR TSATSULNIKOV AF LEDENTSOV NN ZAITSEV SV GORDEEV NY KOPEV PS ALFEROV ZI
Citation: Ae. Zhukov et al., NEGATIVE CHARACTERISTIC TEMPERATURE OF INGAAS QUANTUM-DOT INJECTION-LASER, JPN J A P 1, 36(6B), 1997, pp. 4216-4218
VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY
Authors: ZAITSEV SV GORDEEV NY KOPCHATOV VI USTINOV VM ZHUKOV AE EGOROV AY LEDENTSOV NN MAXIMOV MV KOPEV PS KOSOGOV AO ALFEROV ZI
Citation: Sv. Zaitsev et al., VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY, JPN J A P 1, 36(6B), 1997, pp. 4219-4220
QUANTUM-DOT CW HETEROJUNCTION INJECTION-LASER OPERATING AT ROOM-TEMPERATURE WITH AN OUTPUT POWER OF 1 W
Authors: SHERNYAKOV YM EGOROV AY ZHUKOV AE ZAITSEV SV KOVSH AR KRESTNIKOV IL LUNEV AV LEDENTSOV NN MAKSIMOV MV SAKHAROV AV USTINOV VM CHEN C KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ym. Shernyakov et al., QUANTUM-DOT CW HETEROJUNCTION INJECTION-LASER OPERATING AT ROOM-TEMPERATURE WITH AN OUTPUT POWER OF 1 W, Technical physics letters, 23(2), 1997, pp. 149-150
QUANTUM-DOT LASERS - PRINCIPAL COMPONENTS OF THE THRESHOLD CURRENT-DENSITY
Authors: ZAITSEV SV GORDEEV NY KOPCHATOV VI GEORGIEVSKII AM USTINOV VM ZHUKOV AE EGOROV AY KOVSH AR LEDENTSOV NN KOPEV PS ALFEROV ZI BIMBERG D
Citation: Sv. Zaitsev et al., QUANTUM-DOT LASERS - PRINCIPAL COMPONENTS OF THE THRESHOLD CURRENT-DENSITY, Semiconductors, 31(9), 1997, pp. 947-949
THE EFFECT OF A COULOMB WELL ON THE ABSORPTION AND MAGNETOABSORPTION SPECTRA OF STRAINED INGAAS GAAS HETEROSTRUCTURES/
Authors: KAVOKIN AV KOKHANOVSKII SI NESVIZHKII AI SASIN ME SEISYAN RP USTINOV VM EGOROV AY ZHUKOV AE GUPALOV SV
Citation: Av. Kavokin et al., THE EFFECT OF A COULOMB WELL ON THE ABSORPTION AND MAGNETOABSORPTION SPECTRA OF STRAINED INGAAS GAAS HETEROSTRUCTURES/, Semiconductors, 31(9), 1997, pp. 950-960
LATERAL ASSOCIATION OF VERTICALLY COUPLED QUANTUM DOTS
Authors: TSATSULNIKOV AF EGOROV AY ZHUKOV AE KOVSH AR USTINOV VM LEDENTSOV NN MAKSIMOV MV VOLOVIK BV SUVOROVA AA BERT NA KOPEV PS
Citation: Af. Tsatsulnikov et al., LATERAL ASSOCIATION OF VERTICALLY COUPLED QUANTUM DOTS, Semiconductors, 31(7), 1997, pp. 722-725
Risultati: 1-25 | 26-50 | 51-72