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Results:
1-25
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Results: 25
Authors:
SHI Z
ZOGG H
KELLER U
Citation: Z. Shi et al., THICK CRACK-FREE CAF2 EPITAXIAL LAYER ON GAAS(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 27(2), 1998, pp. 55-58
Authors:
FURLONG MJ
FROMENT M
BERNARD MC
CORTES R
TIWARI AN
KREJCI M
ZOGG H
LINCOT D
Citation: Mj. Furlong et al., AQUEOUS-SOLUTION EPITAXY OF CDS LAYERS ON CUINSE2, Journal of crystal growth, 193(1-2), 1998, pp. 114-122
Authors:
BERCHENKO NN
DOBRIANSKY OA
KOROVIN AV
NIKIFOROV AY
YAKOVYNA VS
ZOGG H
Citation: Nn. Berchenko et al., SUBSTRATE-INDUCED STRAIN IN EPITAXIAL LEAD CHALCOGENIDES BY GALVANOMAGNETIC EFFECT ROTATIONAL DEPENDENCE, Acta Physica Polonica. A, 92(4), 1997, pp. 715-718
Authors:
FACH A
JOHN J
MULLER P
PAGLINO C
ZOGG H
Citation: A. Fach et al., MATERIAL PROPERTIES OF PB1-XSNXSE EPILAYERS ON SI AND THEIR CORRELATION WITH THE PERFORMANCE OF INFRARED PHOTODIODES, Journal of electronic materials, 26(7), 1997, pp. 873-877
Authors:
MULLER P
ZOGG H
FACH A
JOHN J
PAGLINO C
TIWARI AN
KREJCI M
Citation: P. Muller et al., REDUCTION OF THREADING DISLOCATION DENSITIES IN HEAVILY LATTICE-MISMATCHED PBSE ON SI(111) BY GLIDE, Physical review letters, 78(15), 1997, pp. 3007-3010
Authors:
VORLICEK V
ZELEZNY V
TIWARI AN
KREJCI M
ZOGG H
Citation: V. Vorlicek et al., DETERMINATION OF THE CRYSTALLOGRAPHIC ORIENTATION OF CUINSE2 THIN-FILMS BY RAMAN AND INFRARED-SPECTROSCOPY, Journal of applied physics, 82(11), 1997, pp. 5484-5487
Authors:
KREJCI M
TIWARI AN
ZOGG H
SCHWANDER P
HEINRICH H
KOSTORZ G
Citation: M. Krejci et al., ROTATIONAL TWINS IN HETEROEPITAXIAL CUINSE, LAYERS ON SI(111), Journal of applied physics, 81(9), 1997, pp. 6100-6106
Authors:
ZOGG H
FACH A
JOHN J
MASEK J
MULLER P
PAGLINO C
BUTTLER W
Citation: H. Zogg et al., PB1-XSNXSE-ON-SI LWIR SENSOR ARRAYS AND THERMAL IMAGING WITH JFET CMOS READ-OUT/, Journal of electronic materials, 25(8), 1996, pp. 1366-1370
Authors:
MULLER P
FACH A
JOHN J
MASEK J
PAGLINO C
ZOGG H
Citation: P. Muller et al., PROPERTIES OF EPITAXIAL PB1-XSNXSE ON CAF2 COVERED SI(111) SUBSTRATES, Applied surface science, 102, 1996, pp. 130-133
Authors:
JOHN J
FACH A
MASEK J
MULLER P
PAGLINO C
ZOGG H
Citation: J. John et al., IR-SENSOR ARRAY FABRICATION IN PB1-XSNXSE-ON-SI HETEROSTRUCTURES, Applied surface science, 102, 1996, pp. 346-349
Authors:
MASEK J
FACH A
JOHN J
MULLER P
PAGLINO C
ZOGG H
BUTTLER W
Citation: J. Masek et al., THERMAL IMAGING CAMERA WITH LINEAR PB1-XSNXSE-ON-SI INFRARED-SENSOR ARRAY AND COMBINED JFET CMOS READ-OUT ELECTRONICS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 496-500
Authors:
PAGLINO C
FACH A
JOHN J
MULLER P
ZOGG H
PESCIA D
Citation: C. Paglino et al., SCHOTTKY-BARRIER FLUCTUATIONS IN PB1-XSNXSE INFRARED-SENSORS, Journal of applied physics, 80(12), 1996, pp. 7138-7143
Authors:
MULLER P
FACH A
JOHN J
TIWARI AN
ZOGG H
KOSTORZ G
Citation: P. Muller et al., STRUCTURE OF EPITAXIAL PBSE GROWN ON SI(111) AND SI(100) WITHOUT A FLUORIDE BUFFER LAYER, Journal of applied physics, 79(4), 1996, pp. 1911-1916
Authors:
SHI Z
ZOGG H
MULLER P
JUNG ID
KELLER U
Citation: Z. Shi et al., WIDE BANDWIDTH (100)GAAS FLUORIDES QUARTER-WAVELENGTH BRAGG REFLECTORS GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(23), 1996, pp. 3474-3476
Authors:
ROGALSKI A
CIUPA R
ZOGG H
Citation: A. Rogalski et al., COMPUTER MODELING OF CARRIER TRANSPORT IN PBSNSE PHOTODIODES (VOL 35,PG 837, 1994), Infrared physics & technology, 36(4), 1995, pp. 821-821
Authors:
ZOGG H
FACH A
JOHN J
MASEK J
MULLER P
PAGLINO C
BLUNIER S
Citation: H. Zogg et al., PHOTOVOLTAIC IV-VI ON SI INFRARED-SENSOR ARRAYS FOR THERMAL IMAGING, Optical engineering, 34(7), 1995, pp. 1964-1969
Authors:
ZOGG H
TEODOROPOL S
Citation: H. Zogg et S. Teodoropol, THERMAL MISMATCH STRAIN RELAXATION OF EPITAXIAL IV-VI SI(111) STRUCTURES ON MULTIPLE TEMPERATURE CYCLING TO CRYOGENIC TEMPERATURES/, Journal of crystal growth, 150(1-4), 1995, pp. 1186-1189
Authors:
ROGALSKI A
CIUPA R
ZOGG H
Citation: A. Rogalski et al., COMPUTER MODELING OF CARRIER TRANSPORT IN PBSNSE PHOTODIODES, Infrared physics & technology, 35(7), 1994, pp. 837-845
Authors:
ZOGG H
Citation: H. Zogg, MIDINFRARED DETECTOR ARRAYS, Photonics spectra, 28(7), 1994, pp. 87-87
Authors:
ZOGG H
BLUNIER S
FACH A
MAISSEN C
MULLER P
TEODOROPOL S
MEYER V
KOSTORZ G
DOMMANN A
RICHMOND T
Citation: H. Zogg et al., THERMAL-MISMATCH-STRAIN RELAXATION IN EPITAXIAL CAF2, BAF2 CAF2, AND PBSE/BAF2/CAF2 LAYERS ON SI(111) AFTER MANY TEMPERATURE CYCLES/, Physical review. B, Condensed matter, 50(15), 1994, pp. 10801-10810
Authors:
ZOGG H
BLUNIER S
FACH A
MAISSEN C
MULLER P
TEODOROPOL S
MEYER V
KOSTORZ G
DOMMANN A
RICHMOND T
Citation: H. Zogg et al., THERMAL-MISMATCH-STRAIN RELAXATION IN EPITAXIAL CAF2, BAF2 CAF2, AND PBSE/BAF2/CAF2 LAYERS ON SI(111) AFTER MANY TEMPERATURE CYCLES/, Physical review. B, Condensed matter, 50(15), 1994, pp. 10801-10810
Authors:
ZOGG H
FACH A
MAISSEN C
MASEK J
BLUNIER S
Citation: H. Zogg et al., PHOTOVOLTAIC LEAD-CHALCOGENIDE ON SILICON INFRARED-SENSOR ARRAYS, Optical engineering, 33(5), 1994, pp. 1440-1449
Authors:
TIWARI AN
BLUNIER S
FILZMOSER M
ZOGG H
SCHMID D
SCHOCK HW
Citation: An. Tiwari et al., CHARACTERIZATION OF HETEROEPITAXIAL CUIN3SE5 AND CUINSE2 LAYERS ON SISUBSTRATES, Applied physics letters, 65(26), 1994, pp. 3347-3349
Authors:
TIWARI AN
BLUNIER S
KESSLER K
ZELEZNY V
ZOGG H
Citation: An. Tiwari et al., DIRECT GROWTH OF HETEROEPITAXIAL CUINSE2 LAYERS ON SI SUBSTRATES, Applied physics letters, 65(18), 1994, pp. 2299-2301
Authors:
ZOGG H
MAISSEN C
BLUNIER S
TEODOROPOL S
OVERNEY RM
RICHMOND T
HAEFKE H
Citation: H. Zogg et al., STRAIN RELAXATION MORPHOLOGIES OF IIA-FLUORIDES AND LEAD-CHALCOGENIDELAYERS ON SI(111), Journal of crystal growth, 127(1-4), 1993, pp. 668-671
Risultati:
1-25
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