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Authors:
LI AP
ZHANG BR
QIAO YP
QIN GG
MA ZC
ZONG WH
Citation: Ap. Li et al., GAMMA-RAY IRRADIATION EFFECTS ON ELECTROLUMINESCENCE FROM AU EXTRA THIN SI-RICH SIO2 FILM P-SI STRUCTURES/, Chinese Physics Letters, 15(4), 1998, pp. 305-306
Authors:
BAI GF
LI AP
ZHANG YX
SUN YK
MA SY
QIN GG
MA ZC
ZONG WH
Citation: Gf. Bai et al., ELECTROLUMINESCENCE FROM AU EXTRA THIN NANOSIZE GE PARTICLES EMBEDDEDSILICON-OXIDE FILM P-SI AND AU EXTRA THIN NANOSIZE SI PARTICLES EMBEDDED SILICON-OXIDE FILM P-SI, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 127-131
Authors:
QIN GG
LI AP
BAI GF
ZHANG LD
MA ZC
ZONG WH
WANG X
HU XW
Citation: Gg. Qin et al., EFFECTS OF CHEMICAL-COMPOSITION OF SI OXYNITRIDE ON ELECTROLUMINESCENCE FROM SEMITRANSPARENT AU EXTRA THIN SI OXYNITRIDE FILM P-SI STRUCTURES, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 179-185
Authors:
LI AP
BAI GF
CHEN KM
MA ZC
ZONG WH
ZHANG YX
QIN GG
Citation: Ap. Li et al., ELECTROLUMINESCENCE FROM AU EXTRA-THIN SI-RICH SIO2 FILM/N(+)-SI UNDER REVERSE BIASES AND ITS MECHANISM/, Thin solid films, 325(1-2), 1998, pp. 137-139
Authors:
LI AP
ZHANG LD
QIAO YP
QIN GG
MA ZC
ZONG WH
WANG X
HU HW
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Authors:
MA SY
ZHANG BR
QIN GG
MA ZC
ZONG WH
MENG XT
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