Authors:
LEBOURHIS E
PATRIARCHE G
RIVIERE JP
ZOZIME A
Citation: E. Lebourhis et al., MATERIAL FLOW AT THE SURFACE OF INDENTED INDIUM-PHOSPHIDE, Physica status solidi. a, Applied research, 161(2), 1997, pp. 415-427
Authors:
TROMSONCARLI A
ZOZIME A
ERTEL J
SEIBT M
DRUILHE R
GRATTEPAIN C
TRIBOULET R
Citation: A. Tromsoncarli et al., INFLUENCE OF A ZNMNTE NUCLEATION LAYER ON THE STRUCTURAL QUALITY OF (111)ZNTE GROWN BY MOVPE ON (100)GAAS, Journal of crystal growth, 170(1-4), 1997, pp. 549-552
Citation: A. Zozime et J. Castaing, EFFECT OF HYDROGENATION ON THE PROPERTIES OF EXTENDED DEFECTS IN SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 57-62
Authors:
TRIBOULET R
NDAP JO
ELMOKRI A
CARLI AT
ZOZIME A
Citation: R. Triboulet et al., SOLID-STATE RECRYSTALLIZATION OF II-VI SEMICONDUCTORS - APPLICATION TO CADMIUM TELLURIDE, CADMIUM SELENIDE AND ZINC SELENIDE, Journal de physique. IV, 5(C3), 1995, pp. 141-149
Authors:
LEBOURHIS E
ZOZIME A
RIVIERE A
VERMEULIN C
Citation: E. Lebourhis et al., INVESTIGATION OF THE PLASTICITY OF INP AS A FUNCTION OF TEMPERATURE, Journal de physique. III, 5(11), 1995, pp. 1795-1801
Citation: O. Vyvenko et al., CATHODOLUMINESCENCE IMAGING OF DISLOCATIONS IN CDS - A NEW DEFOCUSED-MIRROR TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 105-111
Citation: T. Wosinski et al., CATHODOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF SINGLE DISLOCATIONS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 112-114
Authors:
WOSINSKI T
ZOZIME A
RIVIERE A
VERMEULIN C
Citation: T. Wosinski et al., EBIC INVESTIGATION OF ALPHA-DISLOCATION AND BETA-DISLOCATION IN GAAS, Physica status solidi. a, Applied research, 142(2), 1994, pp. 347-355
Citation: A. Zozime et al., POINT-DEFECT INTERACTION WITH ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN INP, Physica status solidi. a, Applied research, 138(2), 1993, pp. 445-450
Citation: D. Imhoff et al., MICROSTRUCTURE OF HIGH-TEMPERATURE PLASTICALLY DEFORMED ZN-DOPED CDTE- COMPARISON WITH IN-DOPED GAAS, Journal of crystal growth, 130(3-4), 1993, pp. 627-635