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Results: 1-20 |
Results: 20
ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS
Authors: PASSLACK M HONG M SCHUBERT EF ZYDZIK GJ MANNAERTS JP HOBSON WS HARRIS TD
Citation: M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
IN0.53CA0.47AS MSM PHOTODIODES WITH TRANSPARENT CTO SCHOTTKY CONTACTSAND DIGITAL SUPERLATTICE GRADING
Authors: GAO W BERGER PR ZYDZIK GJ OBRYAN HM SIVCO DL CHO AY
Citation: W. Gao et al., IN0.53CA0.47AS MSM PHOTODIODES WITH TRANSPARENT CTO SCHOTTKY CONTACTSAND DIGITAL SUPERLATTICE GRADING, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2174-2179
MIRROR PASSIVATION OF INGAAS LASERS
Authors: DUTTA NK HOBSON WS ZYDZIK GJ DEJONG JF PARAYANTHAL P PASSLACK M CHAKRABARTI UK
Citation: Nk. Dutta et al., MIRROR PASSIVATION OF INGAAS LASERS, Electronics Letters, 33(3), 1997, pp. 213-214
IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC
Authors: TU LW SCHUBERT EF HONG M ZYDZIK GJ
Citation: Lw. Tu et al., IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC, Journal of applied physics, 80(11), 1996, pp. 6448-6451
980 NM SPREAD INDEX LASER WITH STRAIN COMPENSATED INGAAS GAASP/INGAP AND 90-PERCENT FIBER COUPLING EFFICIENCY/
Authors: VAKHSHOORI D HOBSON WS HAN H LOPATA J HENEIN GE WYNN JD DEJONG J SCHNOES ML ZYDZIK GJ
Citation: D. Vakhshoori et al., 980 NM SPREAD INDEX LASER WITH STRAIN COMPENSATED INGAAS GAASP/INGAP AND 90-PERCENT FIBER COUPLING EFFICIENCY/, Electronics Letters, 32(11), 1996, pp. 1007-1008
CARRIER TRANSPORT IN A PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICE
Authors: CANOGLU E YANG CM GARMIRE E MAHGEREFTEH D PARTOVI A CHIU TH ZYDZIK GJ
Citation: E. Canoglu et al., CARRIER TRANSPORT IN A PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICE, Applied physics letters, 69(3), 1996, pp. 316-318
INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS
Authors: PASSLACK M BETHEA CG HOBSON WS LOPATA J SCHUBERT EF ZYDZIK GJ NICHOLS DT DEJONG JF CHAKRABARTI UK DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
GA2O3 FILMS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS
Authors: PASSLACK M SCHUBERT EF HOBSON WS HONG M MORIYA N CHU SNG KONSTADINIDIS K MANNAERTS JP SCHNOES ML ZYDZIK GJ
Citation: M. Passlack et al., GA2O3 FILMS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, Journal of applied physics, 77(2), 1995, pp. 686-693
SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS
Authors: TU LW SCHUBERT EF WANG YH WEIR BE ZYDZIK GJ CHO AY
Citation: Lw. Tu et al., SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS, Applied physics letters, 66(18), 1995, pp. 2315-2317
HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES
Authors: SCHUBERT EF HUNT NEJ MICOVIC M MALIK RJ SIVCO DL CHO AY ZYDZIK GJ
Citation: Ef. Schubert et al., HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES, Science, 265(5174), 1994, pp. 943-945
CARBON-DOPED IMPURITY-INDUCED LAYER DISORDER 0.98 MU-M LASERS
Authors: BYLSMA RB HOBSON WS LOPATA J ZYDZIK GJ GEVA M ASOM MT PEARTON SJ THOMAS PM BRIDENBAUGH PM WASHINGTON MA ROCCASECCA DD WILT DP
Citation: Rb. Bylsma et al., CARBON-DOPED IMPURITY-INDUCED LAYER DISORDER 0.98 MU-M LASERS, Journal of applied physics, 76(1), 1994, pp. 590-592
OPTICAL-TRANSMISSION SYSTEMS EMPLOYING VERTICAL-CAVITY SURFACE-EMITTING LASERS AND MONOLITHICALLY INTEGRATED PHOTORECEIVERS
Authors: NICHOLS DT HOBSON WS VAKHSHOORI D WYNN JD ZYDZIK GJ MORGAN RA DUTTA NK SIVCO DL CHO AY LEIBENGUTH RE
Citation: Dt. Nichols et al., OPTICAL-TRANSMISSION SYSTEMS EMPLOYING VERTICAL-CAVITY SURFACE-EMITTING LASERS AND MONOLITHICALLY INTEGRATED PHOTORECEIVERS, Applied physics letters, 65(24), 1994, pp. 3054-3056
PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/
Authors: SCHUBERT EF PASSLACK M HONG M MANNERTS J OPILA RL PFEIFFER LN WEST KW BETHEA CG ZYDZIK GJ
Citation: Ef. Schubert et al., PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/, Applied physics letters, 64(22), 1994, pp. 2976-2978
DIELECTRIC-PROPERTIES OF ELECTRON-BEAM DEPOSITED GA2O3 FILMS
Authors: PASSLACK M HUNT NEJ SCHUBERT EF ZYDZIK GJ HONG M MANNAERTS JP OPILA RL FISCHER RJ
Citation: M. Passlack et al., DIELECTRIC-PROPERTIES OF ELECTRON-BEAM DEPOSITED GA2O3 FILMS, Applied physics letters, 64(20), 1994, pp. 2715-2717
SI DELTA-DOPING OF (011)-ORIENTED GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SCHUBERT EF PFEIFFER L WEST KW LUFTMAN HS ZYDZIK GJ
Citation: Ef. Schubert et al., SI DELTA-DOPING OF (011)-ORIENTED GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(17), 1994, pp. 2238-2240
CONTROLLED ATOMIC SPONTANEOUS EMISSION FROM ER3+ IN A TRANSPARENT SI SIO2 MICROCAVITY/
Authors: VREDENBERG AM HUNT NEJ SCHUBERT EF JACOBSON DC POATE JM ZYDZIK GJ
Citation: Am. Vredenberg et al., CONTROLLED ATOMIC SPONTANEOUS EMISSION FROM ER3+ IN A TRANSPARENT SI SIO2 MICROCAVITY/, Physical review letters, 71(4), 1993, pp. 517-530
RESONANT-CAVITY P-I-N PHOTODETECTOR UTILIZING AN ELECTRON-BEAM EVAPORATED SI SIO2 MICROCAVITY/
Authors: HUNT NEJ SCHUBERT EF ZYDZIK GJ
Citation: Nej. Hunt et al., RESONANT-CAVITY P-I-N PHOTODETECTOR UTILIZING AN ELECTRON-BEAM EVAPORATED SI SIO2 MICROCAVITY/, Applied physics letters, 63(3), 1993, pp. 391-393
INCREASED FIBER COMMUNICATIONS BANDWIDTH FROM A RESONANT-CAVITY LIGHT-EMITTING DIODE EMITTING AT LAMBDA=940 NM
Authors: HUNT NEJ SCHUBERT EF KOPF RF SIVCO DL CHO AY ZYDZIK GJ
Citation: Nej. Hunt et al., INCREASED FIBER COMMUNICATIONS BANDWIDTH FROM A RESONANT-CAVITY LIGHT-EMITTING DIODE EMITTING AT LAMBDA=940 NM, Applied physics letters, 63(19), 1993, pp. 2600-2602
ENHANCED PHOTOLUMINESCENCE BY RESONANT ABSORPTION IN ER-DOPED SIO2 SIMICROCAVITIES/
Authors: SCHUBERT EF HUNT NEJ VREDENBERG AM HARRIS TD POATE JM JACOBSON DC WONG YH ZYDZIK GJ
Citation: Ef. Schubert et al., ENHANCED PHOTOLUMINESCENCE BY RESONANT ABSORPTION IN ER-DOPED SIO2 SIMICROCAVITIES/, Applied physics letters, 63(19), 1993, pp. 2603-2605
EFFECT OF CARRIER ESCAPE TIME ON THE PERFORMANCE OF SEMIINSULATING PHOTOREFRACTIVE SELF-ELECTRO-OPTIC EFFECT DEVICES
Authors: PARTOVI A GLASS AM ZYDZIK GJ OBRYAN HM CHIU TH KNOX WH
Citation: A. Partovi et al., EFFECT OF CARRIER ESCAPE TIME ON THE PERFORMANCE OF SEMIINSULATING PHOTOREFRACTIVE SELF-ELECTRO-OPTIC EFFECT DEVICES, Applied physics letters, 62(24), 1993, pp. 3088-3090
Risultati: 1-20 |