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Results: 1-25 | 26-49
Results: 1-25/49
GaN bipolar junction transistors with regrown emitters
Authors: Zhang, AP Han, J Ren, F Waldrip, KE Abernathy, CR Luo, B Dang, G Johnson, JW Lee, KP Pearton, SJ
Citation: Ap. Zhang et al., GaN bipolar junction transistors with regrown emitters, EL SOLID ST, 4(5), 2001, pp. G39-G41
GaN electronics for high power, high temperature applications
Authors: Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation: Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
Process development for small-area GaN/AlGaN heterojunction bipolar transistors
Authors: Lee, KP Zhang, AP Dang, G Ren, F Hobson, WS Lopata, J Abenathy, CR Pearton, SJ Lee, JW
Citation: Kp. Lee et al., Process development for small-area GaN/AlGaN heterojunction bipolar transistors, J VAC SCI A, 19(4), 2001, pp. 1846-1849
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chou, CC Lee, CM
Citation: Ay. Polyakov et al., Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures, J ELEC MAT, 30(3), 2001, pp. 147-155
Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN
Authors: Kent, DG Lee, KP Zhang, AP Luo, B Overberg, ME Abernathy, CR Ren, F Mackenzie, KD Pearton, SJ Nakagawa, Y
Citation: Dg. Kent et al., Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN, SOL ST ELEC, 45(3), 2001, pp. 467-470
Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs
Authors: Lee, KP Zhang, AP Dang, G Ren, F Han, J Chu, SNG Hobson, WS Lopata, J Abernathy, CR Pearton, SJ Lee, JW
Citation: Kp. Lee et al., Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs, SOL ST ELEC, 45(2), 2001, pp. 243-247
Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes
Authors: Kent, DG Lee, KP Zhang, AP Luo, B Overberg, ME Abernathy, CR Ren, F Mackenzie, KD Pearton, SJ Nakagawa, Y
Citation: Dg. Kent et al., Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes, SOL ST ELEC, 45(10), 2001, pp. 1837-1842
Simulation of NPN and PNPAlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design
Authors: Monier, C Ren, F Han, J Chang, PC Shul, RJ Lee, KP Zhang, AP Baca, AG Pearton, S
Citation: C. Monier et al., Simulation of NPN and PNPAlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design, IEEE DEVICE, 48(3), 2001, pp. 427-432
p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers
Authors: Luo, B Dang, G Zhang, AP Ren, F Lopata, J Chu, SNG Hobson, WS Pearton, SJ
Citation: B. Luo et al., p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers, J ELCHEM SO, 148(12), 2001, pp. G676-G679
Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices
Authors: Zhang, AP Luo, B Johnson, JW Ren, F Han, J Pearton, SJ
Citation: Ap. Zhang et al., Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices, APPL PHYS L, 79(22), 2001, pp. 3636-3638
Vertical and lateral GaN rectifiers on free-standing GaN substrates
Authors: Zhang, AP Johnson, JW Luo, B Ren, F Pearton, SJ Park, SS Park, YJ Chyi, JI
Citation: Ap. Zhang et al., Vertical and lateral GaN rectifiers on free-standing GaN substrates, APPL PHYS L, 79(10), 2001, pp. 1555-1557
Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage
Authors: Zhang, AP Johnson, JW Ren, F Han, J Polyakov, AY Smirnov, NB Govorkov, AV Redwing, JM Lee, KP Pearton, SJ
Citation: Ap. Zhang et al., Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage, APPL PHYS L, 78(6), 2001, pp. 823-825
Prediction of polarisation behaviour of twisted optical fibres containing Bragg grating sensors
Authors: Zhang, AP Tao, XM Tam, HY
Citation: Ap. Zhang et al., Prediction of polarisation behaviour of twisted optical fibres containing Bragg grating sensors, J TEXTILE I, 91, 2000, pp. 105-116
Common-base operation of GaN bipolar junction transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Abernathy, CR Pearton, SJ Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Chu, SNG
Citation: Xa. Cao et al., Common-base operation of GaN bipolar junction transistors, EL SOLID ST, 3(7), 2000, pp. 333-334
High current, common-base GaN/AlGaN heterojunction bipolar transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Surface conversion effects in plasma-damaged p-GaN
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Surface conversion effects in plasma-damaged p-GaN, MRS I J N S, 5, 2000, pp. NIL_481-NIL_490
High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges, MRS I J N S, 5, 2000, pp. NIL_715-NIL_720
Processing and device performance of GaN power rectifiers
Authors: Zhang, AP Dang, GT Cao, XA Cho, H Ren, F Han, J Chyi, JI Lee, CM Nee, TE Chuo, CC Chi, GC Chu, SNG Wilson, RG Pearton, SJ
Citation: Ap. Zhang et al., Processing and device performance of GaN power rectifiers, MRS I J N S, 5, 2000, pp. NIL_721-NIL_726
Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Dang, G Zhang, AP Ren, F Cao, XA Pearton, SJ Wilson, RG
Citation: Ay. Polyakov et al., Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers, J VAC SCI B, 18(3), 2000, pp. 1237-1243
Fabrication and performance of GaN electronic devices
Authors: Pearton, SJ Ren, F Zhang, AP Lee, KP
Citation: Sj. Pearton et al., Fabrication and performance of GaN electronic devices, MAT SCI E R, 30(3-6), 2000, pp. 55-212
High breakdown voltage Au/Pt/GaN Schottky diodes
Authors: Dang, GT Zhang, AP Mshewa, MM Ren, F Chyi, JI Lee, CM Chuo, CC Chi, GC Han, J Chu, SNG Wilson, RG Cao, XA Pearton, SJ
Citation: Gt. Dang et al., High breakdown voltage Au/Pt/GaN Schottky diodes, J VAC SCI A, 18(4), 2000, pp. 1135-1138
Schottky diode measurements of dry etch damage in n- and p-type GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Shul, RJ Zhang, L
Citation: Xa. Cao et al., Schottky diode measurements of dry etch damage in n- and p-type GaN, J VAC SCI A, 18(4), 2000, pp. 1144-1148
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
Authors: Zhang, AP Dang, GT Ren, F Van Hove, JM Klaassen, JJ Chow, PP Cao, XA Pearton, SJ
Citation: Ap. Zhang et al., Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma, J VAC SCI A, 18(4), 2000, pp. 1149-1152
Plasma damage in p-GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Van Hove, JM Hickman, RA Shul, RJ Zhang, L
Citation: Xa. Cao et al., Plasma damage in p-GaN, J ELEC MAT, 29(3), 2000, pp. 256-261
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chuo, CC Lee, CM
Citation: Ay. Polyakov et al., Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors, SOL ST ELEC, 44(9), 2000, pp. 1549-1555
Risultati: 1-25 | 26-49