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Results:
1-16
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Results: 16
Authors:
Zheng, LR
Tenhunen, H
Citation: Lr. Zheng et H. Tenhunen, Design and analysis of power integrity in deep submicron system-on-chip circuits, ANALOG IN C, 30(1), 2002, pp. 15-29
Authors:
Zheng, LR
Tenhunen, H
Citation: Lr. Zheng et H. Tenhunen, Fast modeling of core switching noise on distributed LRC power grid in ULSI circuits, IEEE T AD P, 24(3), 2001, pp. 245-254
Authors:
Hung, LS
Zheng, LR
Mason, MG
Citation: Ls. Hung et al., Anode modification in organic light-emitting diodes by low-frequency plasma polymerization of CHF3, APPL PHYS L, 78(5), 2001, pp. 673-675
Authors:
Gao, JX
Zheng, LR
Zhu, XR
Wang, LW
Lin, CL
Zhu, DZ
Citation: Jx. Gao et al., Asymmetry of the hysteresis loops for the Au/PbTiO3/YBa2Cu3O7-delta capacitor, NUCL INST B, 169, 2000, pp. 12-15
Authors:
Gao, JX
Zheng, LR
Song, ZT
Lin, CL
Zhu, DZ
Citation: Jx. Gao et al., gamma-ray irradiation effects of Au/PbTiO3/YBa2Cu3O7-delta capacitors under different bias voltage, MATER LETT, 42(6), 2000, pp. 345-349
Authors:
Gao, JX
Zheng, LR
Song, ZT
Wang, LW
Yang, LX
Zhu, DZ
Lin, CL
Citation: Jx. Gao et al., Characteristics of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-delta capacitors fabricated on LaAlO3 and Y2O3-stabilized ZrO2 substrates during irradiation, PHIL MAG B, 79(6), 1999, pp. 829-838
Authors:
Koo, SM
Zheng, LR
Rao, KV
Citation: Sm. Koo et al., BaRuO3 thin film electrode for ferroelectric lead zirconate titanate capacitors, J MATER RES, 14(10), 1999, pp. 3833-3836
Authors:
Zeng, JM
Zheng, LR
Lin, CL
Alexe, M
Pignolet, A
Hesse, D
Citation: Jm. Zeng et al., The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation, PHYS LETT A, 251(5), 1999, pp. 336-339
Authors:
Gao, JX
Zheng, LR
Huang, BP
Song, ZT
Yang, LX
Fan, YJ
Zhu, DZ
Lin, CL
Citation: Jx. Gao et al., Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method, SEMIC SCI T, 14(9), 1999, pp. 836-839
Authors:
He, JT
Lu, YS
Chen, DB
Li, ZH
Bian, JG
Zhu, GY
Tang, XW
Chen, G
Zheng, LR
Chen, XH
Ren, SX
Citation: Jt. He et al., Loss of light yield of doped lead tungstate crystals after irradiation, CHIN PHYS L, 16(10), 1999, pp. 745-746
Authors:
Zeng, JM
Lin, CL
Zheng, LR
Pignolet, A
Alexe, M
Richter, E
Hesse, D
Citation: Jm. Zeng et al., Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films, NUCL INST B, 147(1-4), 1999, pp. 207-211
Authors:
Gao, JX
Zheng, LR
Duo, XZ
Huang, JP
Yang, LX
Lin, CL
Yan, RL
Citation: Jx. Gao et al., Total dose radiation effects of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-delta capacitors, THIN SOL FI, 340(1-2), 1999, pp. 132-136
Authors:
Koo, SM
Mangenot, S
Zheng, LR
Rao, KV
Citation: Sm. Koo et al., Structural and electrical properties of epitaxial SBT thin films by PLD, FERROELECTR, 225(1-4), 1999, pp. 1027
Authors:
Koo, SM
Zheng, LR
Yin, QR
Moon, BM
Rao, KV
Citation: Sm. Koo et al., Preparation and properties of PGO thin films by PLD, FERROELECTR, 225(1-4), 1999, pp. 1051-1058
Authors:
Zeng, JM
Song, SG
Wang, LW
Zhang, M
Zheng, LR
Lin, CL
Citation: Jm. Zeng et al., Sol-gel preparation of Pb(Zr0.50Ti0.50)O-3 ferroelectric thin films using zirconium oxynitrate as the zirconium source, J AM CERAM, 82(2), 1999, pp. 461-464
Authors:
Gao, JX
Zheng, LR
Duo, XZ
Huang, JP
Lin, CL
Yan, RL
Citation: Jx. Gao et al., Total dose radiation effects of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-delta/LaAlO3ferroelectric capacitors, RADIAT EFF, 145(4), 1998, pp. 319-327
Risultati:
1-16
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