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Results: 1-25 | 26-35
Results: 1-25/35

Authors: Zheng, ZZ Zhou, Y Zheng, LX Yang, Y Zhao, DX Lou, CH Zhao, SL
Citation: Zz. Zheng et al., Sexual behaviour and contraceptive use among unmarried, young women migrant workers in five cities in China, REPROD H M, 9(17), 2001, pp. 118-127

Authors: Kanner, GS Vardeny, ZV Lanzani, G Zheng, LX
Citation: Gs. Kanner et al., Are breather excitons the primary photoexcitations in conjugated polymers?, SYNTH METAL, 116(1-3), 2001, pp. 71-73

Authors: Cheung, SH Zheng, LX Xie, MH Tong, SY Ohtani, N
Citation: Sh. Cheung et al., Initial stage of GaN growth and its implication to defect formation in films - art. no. 033304, PHYS REV B, 6403(3), 2001, pp. 3304

Authors: Zheng, LX Xie, MH Xu, SJ Cheung, SH Tong, SY
Citation: Lx. Zheng et al., Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 376-380

Authors: Zheng, LX Schickling, O Peter, ME Lenardo, MJ
Citation: Lx. Zheng et al., The death effector domain-associated factor plays distinct regulatory roles in the nucleus and cytoplasm, J BIOL CHEM, 276(34), 2001, pp. 31945-31952

Authors: Zheng, LX Xie, MH Tong, SY
Citation: Lx. Zheng et al., Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces, PHYS REV B, 61(7), 2000, pp. 4890-4893

Authors: Xie, MH Cheung, SH Zheng, LX Ng, YF Wu, HS Ohtani, N Tong, SY
Citation: Mh. Xie et al., Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy, PHYS REV B, 61(15), 2000, pp. 9983-9985

Authors: Xie, MH Seutter, SM Zheng, LX Cheung, SH Ng, YF Wu, HS Tong, SY
Citation: Mh. Xie et al., Surface morphology of GaN: Flat versus vicinal surfaces, MRS I J N S, 5, 2000, pp. NIL_155-NIL_160

Authors: Zheng, LX Urian, RC Liu, YQ Jen, AKY Pu, L
Citation: Lx. Zheng et al., A binaphthyl-based conjugated polymer for light-emitting diodes, CHEM MATER, 12(1), 2000, pp. 13

Authors: Whitfield, ML Zheng, LX Baldwin, A Ohta, T Hurt, MM Marzluff, WF
Citation: Ml. Whitfield et al., Stem-loop binding protein, the protein that binds the 3 ' end of histone mRNA, is cell cycle regulated by both translational and posttranslational mechanisms, MOL CELL B, 20(12), 2000, pp. 4188-4198

Authors: Xu, D Yang, H Zhang, SM Zheng, LX Zhao, DG Li, SF Wang, YT Wu, RH
Citation: D. Xu et al., Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching, THIN SOL FI, 372(1-2), 2000, pp. 25-29

Authors: Sun, XL Wang, YY Yang, H Li, JB Zheng, LX Xu, DP Wang, ZG
Citation: Xl. Sun et al., The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition, THIN SOL FI, 368(2), 2000, pp. 237-240

Authors: Seutter, SM Xie, MH Zhu, WK Zheng, LX Wu, HS Tong, SY
Citation: Sm. Seutter et al., Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy, SURF SCI, 445(2-3), 2000, pp. L71-L75

Authors: Chan, FKM Chun, HJ Zheng, LX Siegel, RM Bui, KL Lenardo, MJ
Citation: Fkm. Chan et al., A domain in TNF receptors that mediates ligand-independent receptor assembly and signaling, SCIENCE, 288(5475), 2000, pp. 2351-2354

Authors: Zheng, LX Xie, MH Seutter, SM Cheung, SH Tong, SY
Citation: Lx. Zheng et al., Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy, PHYS REV L, 85(11), 2000, pp. 2352-2355

Authors: Sun, XL Yang, H Wang, YT Zheng, LX Xu, DP Zhao, DG Li, SF Wang, ZG
Citation: Xl. Sun et al., Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates, J CRYST GR, 212(3-4), 2000, pp. 397-401

Authors: Richardson, RT Batova, IN Widgren, EE Zheng, LX Whitfield, M Marzluff, WF O'Rand, MG
Citation: Rt. Richardson et al., Characterization of the histone H1-binding protein, NASP, as a cell cycle-regulated somatic protein, J BIOL CHEM, 275(39), 2000, pp. 30378-30386

Authors: Sun, XL Wang, YT Yang, H Zheng, LX Xu, DP Li, JB Wang, ZG
Citation: Xl. Sun et al., Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates, J APPL PHYS, 87(8), 2000, pp. 3711-3714

Authors: Xie, MH Zheng, LX Cheung, SH Ng, YF Wu, HS Tong, SY Ohtani, N
Citation: Mh. Xie et al., Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 77(8), 2000, pp. 1105-1107

Authors: Siegel, RM Martin, DA Hornung, F Dudley, EC Zheng, LX Lenardo, MJ
Citation: Rm. Siegel et al., Signaling through Fas (CD95, APO-1) and related death receptors, CANC DRUG, 5, 2000, pp. 135-152

Authors: Jiang, D Zheng, LX Lenardo, MJ
Citation: D. Jiang et al., Caspases in T-cell receptor-induced thymocyte apoptosis, CELL DEAT D, 6(5), 1999, pp. 402-411

Authors: Sun, XL Yang, H Wang, YT Li, GH Zheng, LX Li, JB Xu, DP Wang, ZG
Citation: Xl. Sun et al., Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD, SCI CHINA A, 42(7), 1999, pp. 763-768

Authors: Xu, DP Wang, YT Yang, H Zheng, LX Li, JB Duan, LH Wu, RH
Citation: Dp. Xu et al., Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction, SCI CHINA A, 42(5), 1999, pp. 517-522

Authors: Jen, AKY Liu, YQ Zheng, LX Liu, S Drost, KJ Zhang, Y Dalton, LR
Citation: Aky. Jen et al., Synthesis and characterization of highly efficient, chemically and thermally stable chromophores with chromone-containing electron acceptors for NLO applications, ADVAN MATER, 11(6), 1999, pp. 452

Authors: Lenardo, M Chan, FKM Hornung, F McFarland, H Siegel, R Wang, J Zheng, LX
Citation: M. Lenardo et al., Mature T lymphocyte apoptosis - Immune regulation in a dynamic and unpredictable antigenic environment, ANN R IMMUN, 17, 1999, pp. 221-253
Risultati: 1-25 | 26-35