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Results: 1-15 |
Results: 15
Influence of the angle between etched (near) Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon
Authors: Nijdam, AJ Gardeniers, JGE Berenschot, JW van Veenendaal, E van Suchtelen, J Elwenspoek, M
Citation: Aj. Nijdam et al., Influence of the angle between etched (near) Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon, J MICROM M, 11(5), 2001, pp. 499-503
A Monte Carlo study of etching in the presence of a mask junction
Authors: van Veenendaal, E Cuppen, HM van Enckevort, WJP van Suchtelen, J Nijdam, AJ Elwenspoek, M Vlieg, E
Citation: E. Van Veenendaal et al., A Monte Carlo study of etching in the presence of a mask junction, J MICROM M, 11(4), 2001, pp. 409-415
Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH
Authors: van Veenendaal, E Sato, K Shikida, M van Suchtelen, J
Citation: E. Van Veenendaal et al., Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH, SENS ACTU-A, 93(3), 2001, pp. 219-231
Micro-morphology of single crystalline silicon surfaces during anisotropicwet chemical etching in KOH: velocity source forests
Authors: van Veenendaal, E Sato, K Shikida, M Nijdam, AJ van Suchtelen, J
Citation: E. Van Veenendaal et al., Micro-morphology of single crystalline silicon surfaces during anisotropicwet chemical etching in KOH: velocity source forests, SENS ACTU-A, 93(3), 2001, pp. 232-242
Recrystallization phenomena of solution grown paraffin dendrites
Authors: Hollander, FFA Stasse, O van Suchtelen, J van Enckevort, WJP
Citation: Ffa. Hollander et al., Recrystallization phenomena of solution grown paraffin dendrites, J CRYST GR, 233(4), 2001, pp. 868-880
Formation and stabilization of pyramidal etch hillocks on silicon {100} inanisotropic etchants: Experiments and Monte Carlo simulation
Authors: Nijdam, AJ van Veenendaal, E Cuppen, HM van Suchtelen, J Reed, ML Gardeniers, JGE van Enckevort, WJP Vlieg, E Elwenspoek, M
Citation: Aj. Nijdam et al., Formation and stabilization of pyramidal etch hillocks on silicon {100} inanisotropic etchants: Experiments and Monte Carlo simulation, J APPL PHYS, 89(7), 2001, pp. 4113-4123
Simulation of anisotropic wet chemical etching using a physical model
Authors: van Veenendaal, E Nijdam, AJ van Suchtelen, J Sato, K Gardeniers, JGE van Enckevort, WJP Elwenspoek, M
Citation: E. Van Veenendaal et al., Simulation of anisotropic wet chemical etching using a physical model, SENS ACTU-A, 84(3), 2000, pp. 324-329
A Monte Carlo study of dislocation growth and etching of crystals
Authors: Cuppen, HM van Veenendaal, E van Suchtelen, J van Enckevort, WJP Vlieg, E
Citation: Hm. Cuppen et al., A Monte Carlo study of dislocation growth and etching of crystals, J CRYST GR, 219(1-2), 2000, pp. 165-175
Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces
Authors: van Veenendaal, E van Beurden, P van Enckevort, WJP Vlieg, E van Suchtelen, J Elwenspoek, M
Citation: E. Van Veenendaal et al., Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces, J APPL PHYS, 88(8), 2000, pp. 4595-4604
The construction of orientation-dependent crystal growth and etch rate functions I. Mathematical and physical aspects
Authors: van Suchtelen, J van Veenendaal, E
Citation: J. Van Suchtelen et E. Van Veenendaal, The construction of orientation-dependent crystal growth and etch rate functions I. Mathematical and physical aspects, J APPL PHYS, 87(12), 2000, pp. 8721-8731
The construction of orientation-dependent crystal growth and etch rate functions II: Application to wet chemical etching of silicon in potassium hydroxide
Authors: van Veenendaal, E van Suchtelen, J van Enckevort, WJP Sato, K Nijdam, AJ Gardeniers, JGE Elwenspoek, M
Citation: E. Van Veenendaal et al., The construction of orientation-dependent crystal growth and etch rate functions II: Application to wet chemical etching of silicon in potassium hydroxide, J APPL PHYS, 87(12), 2000, pp. 8732-8740
Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates
Authors: Nijdam, AJ Berenschot, JW van Suchtelen, J Gardeniers, JGE Elwenspoek, M
Citation: Aj. Nijdam et al., Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates, J MICROM M, 9(2), 1999, pp. 135-138
The velocity source concept
Authors: van Suchtelen, J Nijdam, AJ van Veenendaal, E
Citation: J. Van Suchtelen et al., The velocity source concept, J CRYST GR, 199, 1999, pp. 17-21
Kinetic roughening of the Kossel (1 0 0) surface
Authors: van Veenendaal, E van Hoof, PJCM van Suchtelen, J van Enckevort, WJP Bennema, P
Citation: E. Van Veenendaal et al., Kinetic roughening of the Kossel (1 0 0) surface, J CRYST GR, 199, 1999, pp. 22-26
Etching of silicon in alkaline solutions: a critical look at the {1 1 1} minimum
Authors: Nijdam, AJ van Suchtelen, J Berenschot, JW Gardeniers, JGE Elwenspoek, M
Citation: Aj. Nijdam et al., Etching of silicon in alkaline solutions: a critical look at the {1 1 1} minimum, J CRYST GR, 199, 1999, pp. 430-434
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