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Results:
1-16
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Results: 16
Authors:
Shcherbin, K
Odoulov, S
Ramaz, F
Farid, B
Briat, B
von Bardeleben, HJ
Delaye, P
Roosen, G
Citation: K. Shcherbin et al., Charge transfer in photorefractive CdTe : Ge at different wavelengths, OPT MATER, 18(1), 2001, pp. 151-154
Authors:
Cantin, JL
von Bardeleben, HJ
Gosset, LG
Ganem, JJ
Trimaille, I
Citation: Jl. Cantin et al., Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study, J NON-CRYST, 280(1-3), 2001, pp. 143-149
Authors:
von Bardeleben, HJ
Cantin, JL
Zeinert, A
Racine, B
Zellama, K
Hai, PN
Citation: Hj. Von Bardeleben et al., Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study, APPL PHYS L, 78(19), 2001, pp. 2843-2845
Authors:
Zeinert, A
von Bardeleben, HJ
Bouzerar, R
Citation: A. Zeinert et al., An optical absorption and electron spin resonance study in hydrogenated amorphous carbon prepared by radio frequency sputtering, DIAM RELAT, 9(3-6), 2000, pp. 728-731
Authors:
von Bardeleben, HJ
Cantin, JL
Henry, L
Barthe, MF
Citation: Hj. Von Bardeleben et al., Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation, PHYS REV B, 62(16), 2000, pp. 10841-10846
Authors:
von Bardeleben, HJ
Cantin, JL
Vickridge, I
Battistig, G
Citation: Hj. Von Bardeleben et al., Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study, PHYS REV B, 62(15), 2000, pp. 10126-10134
Authors:
Hugonnard-Bruyere, E
Cantin, JL
von Bardeleben, HJ
Letertre, F
DiCioccio, L
Ouisse, T
Citation: E. Hugonnard-bruyere et al., Defect studies in epitaxial SiC-6H layers on insulator (SiCOI), MICROEL ENG, 48(1-4), 1999, pp. 277-280
Authors:
Aubert, P
von Bardeleben, HJ
Delmotte, F
Cantin, JL
Hugon, MC
Citation: P. Aubert et al., Electron-paramagnetic-resonance study of the (100)Si/Si3N4 interface, PHYS REV B, 59(16), 1999, pp. 10677-10684
Authors:
von Bardeleben, HJ
Cantin, JL
Gosset, LG
Ganem, JJ
Trimaille, I
Rigo, S
Citation: Hj. Von Bardeleben et al., Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2, J NON-CRYST, 245, 1999, pp. 169-174
Authors:
Jolly, F
Cantin, JL
Rochet, F
Dufour, G
von Bardeleben, HJ
Citation: F. Jolly et al., Temperature effects on the Si/SiO2 interface defects and suboxide distribution, J NON-CRYST, 245, 1999, pp. 217-223
Authors:
von Bardeleben, HJ
Arnoux, T
Launay, JC
Citation: Hj. Von Bardeleben et al., Intrinsic defects in photorefractive bulk CdTe and ZnCdTe, J CRYST GR, 197(3), 1999, pp. 718-723
Authors:
Briat, B
Ramaz, F
Farid, B
Shcherbin, K
von Bardeleben, HJ
Citation: B. Briat et al., Spectroscopic characterization of photorefractive CdTe : Ge, J CRYST GR, 197(3), 1999, pp. 724-728
Authors:
Gosset, LG
Ganem, JJ
von Bardeleben, HJ
Rigo, S
Trimaille, I
Cantin, JL
Akermark, T
Vickridge, IC
Citation: Lg. Gosset et al., Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations, J APPL PHYS, 85(7), 1999, pp. 3661-3665
Electron irradiation effects on the intersubband transitions in InGaAs/AlGaAs multiple quantum wells
Authors:
Manasreh, MO
von Bardeleben, HJ
Mousalitin, AM
Khokhlov, DR
Citation: Mo. Manasreh et al., Electron irradiation effects on the intersubband transitions in InGaAs/AlGaAs multiple quantum wells, J APPL PHYS, 85(1), 1999, pp. 630-632
Authors:
Stepikhova, M
Palmetshofer, L
Jantsch, W
von Bardeleben, HJ
Gaponenko, NV
Citation: M. Stepikhova et al., 1.5 mu m infrared photoluminescence phenomena in Er-doped porous silicon, APPL PHYS L, 74(4), 1999, pp. 537-539
Authors:
Lebib, S
von Bardeleben, HJ
Cernogora, J
Fave, JL
Roussel, J
Citation: S. Lebib et al., Time-resolved photoluminescence study of the red emission in nanoporous SiGe alloys, J LUMINESC, 80(1-4), 1998, pp. 153-157
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