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Results:
1-12
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Results: 12
Authors:
Feldman, LC
Citation: Lc. Feldman, Fundamental aspects of silicon oxidation - Introduction, SPR S MAT S, 46, 2001, pp. 1-11
Authors:
Hines, MA
Citation: Ma. Hines, Morphological aspects of silicon oxidation in aqueous solutions, SPR S MAT S, 46, 2001, pp. 13-34
Authors:
Ross, FM
Gibson, JM
Citation: Fm. Ross et Jm. Gibson, Structural evolution of the silicon/oxide interface during passive and active oxidation, SPR S MAT S, 46, 2001, pp. 35-60
Authors:
Hattori, T
Nohira, H
Citation: T. Hattori et H. Nohira, Oxidation of H-terminated silicon, SPR S MAT S, 46, 2001, pp. 61-88
Authors:
Watanabe, H
Miyata, N
Ichikawa, M
Citation: H. Watanabe et al., Layer-by-layer oxidation of Si(001) surfaces, SPR S MAT S, 46, 2001, pp. 89-105
Authors:
Pasquarello, A
Hybertsen, MS
Car, R
Citation: A. Pasquarello et al., Atomic dynamics during silicon oxidation, SPR S MAT S, 46, 2001, pp. 107-125
Authors:
Raghavachari, K
Citation: K. Raghavachari, First-principles quantum chemical investigations of silicon oxidation, SPR S MAT S, 46, 2001, pp. 127-141
Authors:
Chabal, YJ
Weldon, MK
Queeney, KT
Esteve, A
Citation: Yj. Chabal et al., Vibrational studies of ultra-thin oxides and initial silicon oxidation, SPR S MAT S, 46, 2001, pp. 143-159
Authors:
Schulte, WH
Gustafsson, T
Garfunkel, E
Baumvol, IJR
Gusev, EP
Citation: Wh. Schulte et al., Ion beam studies of silicon oxidation and oxynitridation, SPR S MAT S, 46, 2001, pp. 161-191
Authors:
Pantelides, ST
Buczko, R
Ramamoorthy, M
Rashkeev, S
Duscher, G
Pennycook, SJ
Citation: St. Pantelides et al., Local and global bonding at the Si-SiO2 interface, SPR S MAT S, 46, 2001, pp. 193-218
Authors:
Muller, DA
Neaton, JB
Citation: Da. Muller et Jb. Neaton, Evolution of the interfacial electronic structure during thermal oxidation, SPR S MAT S, 46, 2001, pp. 219-246
Authors:
Tu, YH
Tersoff, J
Citation: Yh. Tu et J. Tersoff, Structure and energetics of the interface between Si and amorphous SiO2, SPR S MAT S, 46, 2001, pp. 247-255
Risultati:
1-12
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