Citation: Jh. Tsai et al., AN EXTREMELY LOW OFFSET VOLTAGE ALINAS GAINAS HETEROSTRUCTURE-EMITTERBIPOLAR-TRANSISTOR/, Superlattices and microstructures, 23(6), 1998, pp. 1297-1307
Citation: Xd. Zhao et al., GENERALIZED-BARRIER PARAMETERS FOR SINGLE-BARRIER STRUCTURES AND RESONANCE WIDTH IN ASYMMETRICAL DOUBLE-BARRIER STRUCTURES, Superlattices and microstructures, 23(6), 1998, pp. 1309-1322
Authors:
MINOT C
SAHRI N
LEPERSON H
PALMIER JF
HARMAND JC
MEDUS JP
ESNAULT JC
Citation: C. Minot et al., MILLIMETER-WAVE NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAINAS ALINAS SEMICONDUCTOR SUPERLATTICES/, Superlattices and microstructures, 23(6), 1998, pp. 1323-1332
Citation: K. Natori et N. Sano, CURRENT BISTABILITY IN RESONANT-TUNNELING THROUGH A SEMICONDUCTOR QUANTUM-DOT, Superlattices and microstructures, 23(6), 1998, pp. 1339-1342
Authors:
MEHDAOUI A
BERLING D
LOEGEL B
BEILLE J
BOURGAULT D
NOUDEM JG
PORCAR L
TOURNIER R
Citation: A. Mehdaoui et al., THE INFLUENCE OF TEXTURING THROUGH ZONE-MELTING OR HOT-PRESSING UNDERMAGNETIC-FIELDS ON THE MAGNETIC-SUSCEPTIBILITY OF HIGH-TEMPERATURE SUPERCONDUCTING CERAMICS, Superlattices and microstructures, 23(6), 1998, pp. 1343-1346
Authors:
JEPPESEN S
MILLER MS
KOWALSKI B
MAXIMOV I
SAMUELSON L
Citation: S. Jeppesen et al., INAS QUANTUM DOTS IN GAAS HOLES - ISLAND NUMBER DEPENDENCE ON HOLE DIAMETER AND CONDUCTION-BAND COUPLING ESTIMATES, Superlattices and microstructures, 23(6), 1998, pp. 1347-1352
Citation: G. Schwarz et al., MULTISTABLE CURRENT-VOLTAGE CHARACTERISTICS AS FINGERPRINTS OF GROWTH-RELATED IMPERFECTIONS IN SEMICONDUCTOR SUPERLATTICES, Superlattices and microstructures, 23(6), 1998, pp. 1353-1357
Authors:
KANY F
HARTMANN JM
ULMERTUFFIGO H
MARIETTE H
Citation: F. Kany et al., COMPARISON BETWEEN ATOMIC LAYER EPITAXY-GROWN AND MOLECULAR-BEAM EPITAXY-GROWN CDTE MNTE SUPERLATTICES - A STRUCTURAL AND OPTICAL STUDY/, Superlattices and microstructures, 23(6), 1998, pp. 1359-1366
Citation: U. Wieser et al., SELF-ADJUSTING FORMATION OF A LATERAL CONFINEMENT POTENTIAL IN SI SIGE HETEROSTRUCTURES WITH COMPENSATING PN LAYERS/, Superlattices and microstructures, 23(5), 1998, pp. 981-984
Citation: Pd. Altukhov et al., EXCITONS AND MULTI-EXCITON COMPLEXES BOUND TO A 2-DIMENSIONAL HOLE LAYER AT A SILICON SURFACE - THE KONDO EFFECT, THE COULOMB-BLOCKADE AND A NEGATIVE PHOTOCONDUCTIVITY, Superlattices and microstructures, 23(5), 1998, pp. 985-990
Citation: Wz. Gu et al., INDUCED DEFECTS IN A-SI-H A-SINX-H MULTILAYERS BY USE OF EMT AND PAT/, Superlattices and microstructures, 23(5), 1998, pp. 991-997
Citation: V. Sankin et I. Stolichnov, NEGATIVE DIFFERENTIAL CONDUCTION IN THE BLOCH OSCILLATIONS REGIME IN THE HEXAGONAL SILICON-CARBIDE POLYTYPES 4H, 6H AND 8H, Superlattices and microstructures, 23(5), 1998, pp. 999-1004
Citation: Fy. Qu et al., LASER-DRESSED BINDING-ENERGY OF A HYDROGEN IMPURITY IN THE GAAS ALXGA1-XAS NANOSTRUCTURE IN THE PRESENCE OF A STATIC ELECTRIC-FIELD/, Superlattices and microstructures, 23(5), 1998, pp. 1005-1014
Authors:
FREIRE AK
FARIAS GA
FREIRE VN
FERREIRA EC
Citation: Ak. Freire et al., ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GAAS ALXGA1-XAS SINGLE QUANTUM-WELLS/, Superlattices and microstructures, 23(5), 1998, pp. 1015-1018
Authors:
CURY LA
MATINAGA FM
FREIRE SLS
MOREIRA MVB
BEERENS J
PY MA
Citation: La. Cury et al., ELECTRON EFFECTIVE-MASS DETERMINATION IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELLAND INAS-GAAS SUPERLATTICE CHANNELS, Superlattices and microstructures, 23(5), 1998, pp. 1019-1025
Citation: T. Gilmour et al., IDENTIFICATION OF ZONE BOUNDARY AND INTERFACE-PHONON RECOMBINATIONS IN PHOTOLUMINESCENCE FROM TYPE-II GAAS ALAS SHORT-PERIOD SUPERLATTICES/, Superlattices and microstructures, 23(5), 1998, pp. 1027-1032
Authors:
PUSEP YA
SILVA MTO
GALZERANI JC
DASILVA SW
SCOLFARO LMR
ENDERLEIN R
QUIVY AA
LIMA AP
LEITE JR
Citation: Ya. Pusep et al., FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES, Superlattices and microstructures, 23(5), 1998, pp. 1033-1035
Authors:
MELLITI R
TRONC P
MAO E
MAJERFELD A
DEPEYROT J
Citation: R. Melliti et al., VALENCE-BAND STRUCTURE AND OPTICAL-ABSORPTION IN P-TYPE GAAS-AL0.3GA0.7AS MULTI-QUANTUM-WELL INFRARED PHOTODETECTORS UNDER AN ELECTRIC-FIELD, Superlattices and microstructures, 23(5), 1998, pp. 1037-1046
Citation: G. Kim et al., ENHANCED ELECTRON-TUNNELING AND GAMMA-X INTERLAYER INTERVALLEY ELECTRON-TRANSFER IN A TRIPLE-BARRIER HETEROSTRUCTURE, Superlattices and microstructures, 23(5), 1998, pp. 1047-1052
Citation: Js. Nelson et al., STRAIN COMPENSATION IN LATTICE-MISMATCHED SHORT-PERIOD SUPERLATTICES, Superlattices and microstructures, 23(5), 1998, pp. 1053-1062
Authors:
SARI H
ERGUN Y
ELAGOZ S
KASAPOGLU E
SOKMEN I
TOMAK M
Citation: H. Sari et al., SUBBAND STRUCTURE AND EXCITONIC BINDING OF GRADED GAAS GA1-XALXAS QUANTUM-WELLS UNDER AN ELECTRIC-FIELD/, Superlattices and microstructures, 23(5), 1998, pp. 1067-1074
Citation: G. Weber et Gn. Carneiro, EXCITED-STATES OF DONORS BOUND TO X VALLEYS IN GAAS-ALAS TYPE-II STRUCTURES, Superlattices and microstructures, 23(5), 1998, pp. 1075-1078
Authors:
BARBIERI S
MANGO F
BELTRAM F
LAZZARINO M
SORBA L
Citation: S. Barbieri et al., BROAD-BAND MICROWAVE DETECTION WITH A NOVEL 2D HOT-ELECTRON DEVICE, Superlattices and microstructures, 23(5), 1998, pp. 1079-1082