Citation: A. Elhabachi et Kh. Schoenbach, GENERATION OF INTENSE EXCIMER RADIATION FROM HIGH-PRESSURE HOLLOW-CATHODE DISCHARGES, Applied physics letters, 73(7), 1998, pp. 885-887
Citation: R. Hatakeyama et al., EXPERIMENTAL-EVIDENCE FOR HIGH-YIELD C-74 PRODUCTION IN AN ARC PERIPHERY PLASMA, Applied physics letters, 73(7), 1998, pp. 888-890
Authors:
TAKEUCHI I
CHANG H
GAO C
SCHULTZ PG
XIANG XD
SHARMA RP
DOWNES MJ
VENKATESAN T
Citation: I. Takeuchi et al., COMBINATORIAL SYNTHESIS AND EVALUATION OF EPITAXIAL FERROELECTRIC DEVICE LIBRARIES, Applied physics letters, 73(7), 1998, pp. 894-896
Citation: Qx. Jia et al., IMPROVEMENT IN PERFORMANCE OF ELECTRICALLY TUNABLE DEVICES BASED ON NONLINEAR DIELECTRIC SRTIO3 USING A HOMOEPITAXIAL LAALO3 INTERLAYER, Applied physics letters, 73(7), 1998, pp. 897-899
Citation: Ja. Kittl et al., MECHANISM OF LOW-TEMPERATURE C54 TISI2 FORMATION BYPASSING C49 TISI2 - EFFECT OF SI MICROSTRUCTURE AND MO IMPURITIES ON THE TI-SI REACTION-PATH, Applied physics letters, 73(7), 1998, pp. 900-902
Citation: Wc. Yi et al., FERROELECTRIC CHARACTERIZATION OF HIGHLY (0001)-ORIENTED YMNO3 THIN-FILMS GROWN BY CHEMICAL SOLUTION DEPOSITION, Applied physics letters, 73(7), 1998, pp. 903-905
Citation: Yk. Yap et al., INFLUENCE OF NEGATIVE DC BIAS VOLTAGE ON STRUCTURAL TRANSFORMATION OFCARBON NITRIDE AT 600 DEGREES-C, Applied physics letters, 73(7), 1998, pp. 915-917
Citation: K. Ichimura et al., 3-DIMENSIONAL ORIENTATIONAL CONTROL OF MOLECULES BY SLANTWISE PHOTOIRRADIATION, Applied physics letters, 73(7), 1998, pp. 921-923
Citation: Pm. Mooney et al., X-RAY-DIFFRACTION ANALYSIS OF SIGE SI HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES/, Applied physics letters, 73(7), 1998, pp. 924-926
Authors:
WANG X
HELMERSSON U
OLAFSSON S
RUDNER S
WERNLUND LD
GEVORGIAN S
Citation: X. Wang et al., GROWTH AND FIELD-DEPENDENT DIELECTRIC-PROPERTIES OF EPITAXIAL NA0.5K0.5NBO3 THIN-FILMS, Applied physics letters, 73(7), 1998, pp. 927-929
Authors:
NEUBAUER B
ROSENAUER A
GERTHSEN D
AMBACHER O
STUTZMANN M
Citation: B. Neubauer et al., ANALYSIS OF COMPOSITION FLUCTUATIONS ON AN ATOMIC-SCALE IN AL0.25GA0.75N BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 73(7), 1998, pp. 930-932
Authors:
KOBAYASHI H
KUBOTA T
KAWA H
NAKATO Y
NISHIYAMA M
Citation: H. Kobayashi et al., OXIDE THICKNESS DEPENDENCE OF ENERGY SHIFTS IN THE SI 2P LEVELS FOR THE SIO2 SI STRUCTURE, AND ITS ELIMINATION BY A PALLADIUM OVERLAYER/, Applied physics letters, 73(7), 1998, pp. 933-935
Authors:
MIWA S
KUO LH
KIMURA K
YASUDA T
OHTAKE A
JIN CG
YAO T
Citation: S. Miwa et al., THE ROLE OF ZINC PREEXPOSURE IN LOW-DEFECT ZNSE GROWTH ON AS-STABILIZED GAAS(001), Applied physics letters, 73(7), 1998, pp. 939-941
Citation: N. Achtziger et al., HYDROGEN PASSIVATION OF SILICON-CARBIDE BY LOW-ENERGY ION-IMPLANTATION, Applied physics letters, 73(7), 1998, pp. 945-947
Authors:
FLORO JA
CHASON E
SINCLAIR MB
FREUND LB
LUCADAMO GA
Citation: Ja. Floro et al., DYNAMIC SELF-ORGANIZATION OF STRAINED ISLANDS DURING SIGE EPITAXIAL-GROWTH, Applied physics letters, 73(7), 1998, pp. 951-953