Citation: G. Beshkov et al., XPS STUDY OF PLASMA-TREATED CARBON LAYERS DEPOSITED ON POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 1-4
Authors:
BACHLI A
NICOLET MA
BAUD L
JAUSSAUD C
MADAR R
Citation: A. Bachli et al., NICKEL FILM ON (001)SIC - THERMALLY-INDUCED REACTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 11-23
Citation: E. Ehret et O. Marty, CORRELATION BETWEEN ELECTRICAL-ACTIVITY AND EXTENDED DEFECT IN EMC MULTICRYSTALLINE MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 24-30
Citation: D. Shi et al., EFFECT OF AGING IN THE 2-PHASE REGION IN A CU-ZN-AL SHAPE-MEMORY ALLOY, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 31-36
Authors:
MO S
PEINER E
SCHLACHETZKI A
KLOCKENBRINK R
WEBER ER
Citation: S. Mo et al., SELECTED-AREA ELECTRON-CHANNELING PATTERN AS A CHARACTERIZATION METHOD FOR HETEROEPITAXIAL LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 37-42
Citation: A. Saric et al., MICROSTRUCTURAL PROPERTIES OF FE-OXIDE POWDERS OBTAINED BY PRECIPITATION FROM FECL3 SOLUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 43-52
Citation: Kl. Zeislermashl et al., CHARACTERIZATION OF HIGH CRITICAL-TEMPERATURE SUPERCONDUCTING WIRES, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 53-59
Citation: L. Helmers et al., GRADED AND STACKED THERMOELECTRIC GENERATORS - NUMERICAL DESCRIPTION AND MAXIMIZATION OF OUTPUT POWER, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 60-68
Citation: B. Ullrich, COMPARISON OF THE PHOTOCURRENT OF ZNSE INSE/SI AND ZNSE/SI HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 69-71
Citation: K. Satoh et al., FAR-INFRARED ABSORPTION AND DC CONDUCTIVITY MEASUREMENTS IN SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 72-75
Citation: M. Rezki et al., ELECTRONIC-STRUCTURE OF SI1-X-YCXGEY, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 157-161
Authors:
AKKAL B
BENAMARA Z
BOUDISSA A
BOUIADJRA NB
AMRANI M
BIDEUX L
GRUZZA B
Citation: B. Akkal et al., MODELIZATION AND CHARACTERIZATION OF AU INSB/INP SCHOTTKY SYSTEMS AS A FUNCTION OF TEMPERATURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 162-168
Authors:
MENG MQ
MA CQ
LU F
WANG KM
JIANG DH
LIU XD
LU QM
Citation: Mq. Meng et al., ANALYSIS OF PROPERTIES OF ION-IMPLANTED PLANAR OPTICAL WAVE-GUIDES INCR-KTIOPO4 AND ER-KTIOPO4, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 169-173
Citation: El. Kitanin et al., HEAT-TRANSFER THROUGH SOURCE POWDER IN SUBLIMATION GROWTH OF SIC CRYSTAL, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 174-183
Citation: A. Stephen et al., MAGNETIZATION BEHAVIOR OF ELECTRODEPOSITED NI-MN ALLOYS, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 184-186
Citation: Sf. Yoon et Hq. Zheng, ELECTRICAL, OPTICAL AND SURFACE-MORPHOLOGY CHARACTERISTICS OF INP GROWN USING A VALVED PHOSPHORUS CRACKER CELL IN SOLID SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 187-194
Citation: P. Thilakan et J. Kumar, OXIDATION DEPENDENT CRYSTALLIZATION BEHAVIOR OF IO AND ITO THIN-FILMSDEPOSITED BY REACTIVE THERMAL DEPOSITION TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 195-200
Citation: S. Bednarek, THERMOMAGNETOELASTIC AND THERMOELECTROELASTIC PROPERTIES OF A FERROMAGNETIC COMPOSITE WITHIN AN ELASTOMER MATRIX, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 201-209
Citation: A. Schneuwly et al., UNCOUPLING BEHAVIOR OF CURRENT GATES IN SELF-HEALING CAPACITORS, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 210-220
Citation: Dk. George et al., PREPARATION OF THE METASTABLE COMPOUND AU3SI BY QUENCHING LIQUID DROPLETS OF A AU-25 AT.PERCENT SI ALLOW INTO WATER, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 221-224
Authors:
SRNANEK R
BONANNI A
SITTER H
LIDAY J
NOVOTNY I
Citation: R. Srnanek et al., CHEMICAL BEVELING OF CDTE AND CDTE MNTE STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 225-228
Authors:
SZUSZKIEWICZ W
DYBKO K
DYNOWSKA E
WITKOWSKA B
JOUANNE M
JULIEN C
Citation: W. Szuszkiewicz et al., LOCAL MODES OF TRANSITION-METAL IONS (MN, FE, CO) IN NARROW-GAP II-VISEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 1-4
Citation: Yc. Chan et al., GROWTH KINETIC-STUDIES OF CU-SN INTERMETALLIC COMPOUND AND ITS EFFECTON SHEAR-STRENGTH OF LCCC SMT SOLDER JOINTS, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 5-13
Citation: Mg. Krishna et al., TEMPERATURE AND IONIC SIZE DEPENDENCE OF THE PROPERTIES OF CERIA BASED OPTIONIC THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 14-20