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Results: 51-75/544
Authors:
XU BM
PAI NG
WANG QM
CROSS LE
Citation: Bm. Xu et al., ANTIFERROELECTRIC THIN AND THICK-FILMS FOR HIGH-STRAIN MICROACTUATORS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 1065-1077
Authors:
SCOTT JF
ALEXE M
ZAKHAROV ND
PIGNOLET A
CURRAN C
HESSE D
Citation: Jf. Scott et al., NANOPHASE SBT-FAMILY FERROELECTRIC MEMORIES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 1-14
Authors:
AUCIELLO O
Citation: O. Auciello, PROCEEDINGS OF THE 10TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - MONTEREY, CALIFORNIA, USA - MARCH 1-4, 1998, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 11-21
Authors:
MAZURE C
ALSMEIER J
DEHM C
HONLEIN W
Citation: C. Mazure et al., TECHNOLOGY CHALLENGES AND SOLUTIONS FOR 1GBIT AND BEYOND, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 15-25
Authors:
WASER R
LOHSE O
Citation: R. Waser et O. Lohse, ELECTRICAL CHARACTERIZATION OF FERROELECTRIC, PARAELECTRIC, AND SUPERPARAELECTRIC THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 27-40
Authors:
TAKASU H
NAKAMURA T
KAMISAWA A
Citation: H. Takasu et al., FERROELECTRIC EMBEDDED DEVICES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 41-51
Authors:
MILKOVE KR
Citation: Kr. Milkove, DRY-ETCHING OF (BA,SR)TIO3 WITH CL-2, SF6, AND CF4, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 53-62
Authors:
CHEN YJ
LIU KS
LING YC
LIN IN
Citation: Yj. Chen et al., IMPROVEMENT ON FERROELECTRIC PROPERTIES OF (PB1-XLAX)(ZRYTI1-Y)(1-X 4)O-3 THIN-FILMS BY USING METALLIC RU AS INTERMEDIATE LAYERS/, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 63-71
Authors:
FUJIMORI Y
IZUMI N
NAKAMURA T
KAMISAWA A
Citation: Y. Fujimori et al., SR-2(TA,NB)(2)O-7 FERROELECTRIC THIN-FILM FOR FERROELECTRIC MEMORY FET, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 73-82
Authors:
FUJISAKI Y
KUSHIDAABDELGHAFAR K
MIKI H
SHIMAMOTO Y
Citation: Y. Fujisaki et al., DEGRADATION-FREE FERROELECTRIC PB(ZR,TI)O-3 THIN-FILM CAPACITORS WITHIRO2 TOP ELECTRODE, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 83-95
Authors:
ASHIDA H
TOMOTANI M
TAMURA T
MATSUURA K
GOTO Y
OTANI S
Citation: H. Ashida et al., EVALUATION OF ELECTRICAL-PROPERTIES AND SIMS PROFILES ON FORMING GAS(N-2-H-2) ANNEALED PT PZT/PT CAPACITORS/, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 97-105
Authors:
FUJISAWA H
HYODO S
JITSUI K
SHIMIZU M
NIU H
OKINO H
SHIOSAKI T
Citation: H. Fujisawa et al., ELECTRICAL-PROPERTIES OF PZT THIN-FILMS GROWN ON IR IRO2 BOTTOM ELECTRODES BY MOCVD/, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 107-114
Authors:
WHITE D
CULBRETH T
MITRA S
Citation: D. White et al., OPTIMIZATION OF PLASTIC PACKAGING OF FERROELECTRIC SEMICONDUCTOR MEMORIES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 115-126
Authors:
MACLEOD TC
HO FD
Citation: Tc. Macleod et Fd. Ho, MODELING OF METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 127-143
Authors:
PHILOFSKY E
MITRA S
Citation: E. Philofsky et S. Mitra, A QUALITATIVE MODEL FOR DEGRADATION OF FRAM(R) PRODUCTS DURING PLASTIC PACKAGING, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 145-153
Authors:
BALU V
CHEN TS
KATAKAM S
LEE JH
WHITE B
ZAFAR S
JIANG B
ZURCHER P
JONES RE
LEE JC
Citation: V. Balu et al., DIELECTRIC-DISPERSION IN BARIUM STRONTIUM-TITANATE THIN-FILM CAPACITORS WITH IRIDIUM ELECTRODES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 155-166
Authors:
ZHUANG WW
WU NJ
RITUMS D
IGNATIEV A
Citation: Ww. Zhuang et al., THE INTEGRATION OF BA0.5SR0.5TIO3 WITH SILICON BY THE USE OF METALLICBUFFERS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 167-172
Authors:
TSAI MS
SUN SC
TSENG TY
Citation: Ms. Tsai et al., ELECTRICAL-PROPERTIES OF O-2 AND N-2 ANNEALED (BA,SR)TIO3 THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 173-183
Authors:
AHN JH
CHOI GP
CHOI WY
LEE WJ
YOON SG
KIM HG
Citation: Jh. Ahn et al., EFFECTS OF BOTTOM ELECTRODES ON THE LEAKAGE PROPERTIES OF SPUTTERED BST THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 185-195
Authors:
ABE K
YANASE N
SANO K
IZUHA M
FUKUSHIMA N
KAWAKUBO T
Citation: K. Abe et al., MODIFICATION OF FERROELECTRICITY IN HETEROEPITAXIAL (BA,SR)TIO3 FILMSFOR NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 197-206
Authors:
SEONG NJ
YOON SG
Citation: Nj. Seong et Sg. Yoon, EFFECT OF 2ND-PHASE ON THE ELECTRICAL-PROPERTIES OF SRBI2TA2O9 (SBT) THIN-FILMS DEPOSITED AT 550-DEGREES-C BY PEMOCVD, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 207-215
Authors:
CHOI WY
AHN JH
CHOI JH
KIM HG
Citation: Wy. Choi et al., FATIGUE PROPERTIES OF SB DOPED PZT THIN-FILMS DEPOSITED BY DC REACTIVE SPUTTERING, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 217-227
Authors:
CHEON CI
KIM JS
Citation: Ci. Cheon et Js. Kim, CRYSTAL-STRUCTURE, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES IN NONSTOICHIOMETRIC SBT THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 229-240
Authors:
WATANABE K
HARTMANN AJ
LAMB RN
SCOTT JF
Citation: K. Watanabe et al., A COMPARISON OF SCHOTTKY-LIMITED AND SPACE-CHARGE-LIMITED CURRENTS INSRBI2TA2O9 THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 241-249
Authors:
EOM CB
RAO RA
GAN Q
WASA K
WERDER DJ
Citation: Cb. Eom et al., SINGLE-CRYSTAL THIN-FILMS OF CONDUCTIVE OXIDES SRRUO3 AND FERROELECTRIC HETEROSTRUCTURES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 251-261