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Results: 1-25 | 26-29
Results: 1-25/29
THE EFFECT OF TEMPERATURE-DEPENDENT PROCESSES ON THE PERFORMANCE OF 1.5-MU-M COMPRESSIVELY STRAINED INGAAS(P) MQW SEMICONDUCTOR DIODE-LASERS
Authors: SWEENEY SJ PHILLIPS AF ADAMS AR OREILLY EP THIJS PJA
Citation: Sj. Sweeney et al., THE EFFECT OF TEMPERATURE-DEPENDENT PROCESSES ON THE PERFORMANCE OF 1.5-MU-M COMPRESSIVELY STRAINED INGAAS(P) MQW SEMICONDUCTOR DIODE-LASERS, IEEE photonics technology letters, 10(8), 1998, pp. 1076-1078
REFLECTANCE AND PHOTOMODULATED REFLECTANCE STUDIES OF AN INGAAS GAAS/ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURE UNDER HYDROSTATIC-PRESSURE/
Authors: KLAR PJ VICENTE PMA SALE TE HOSEA TJC ADAMS AR RAYMOND A
Citation: Pj. Klar et al., REFLECTANCE AND PHOTOMODULATED REFLECTANCE STUDIES OF AN INGAAS GAAS/ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURE UNDER HYDROSTATIC-PRESSURE/, Solid state communications, 107(3), 1998, pp. 97-100
THE INFLUENCE OF TENSILE STRAIN ON DIFFERENTIAL GAIN AND AUGER RECOMBINATION IN 1.5-MU-M MULTIPLE-QUANTUM-WELL LASERS
Authors: JONES G SMITH AD OREILLY EP SILVER M BRIGGS ATR FICE MJ ADAMS AR GREENE PD SCARROTT K VRANIC A
Citation: G. Jones et al., THE INFLUENCE OF TENSILE STRAIN ON DIFFERENTIAL GAIN AND AUGER RECOMBINATION IN 1.5-MU-M MULTIPLE-QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 34(5), 1998, pp. 822-833
IMPROVED TEMPERATURE-DEPENDENCE OF 1.3 MU-M ALGALNAS-BASED MQW SEMICONDUCTOR DIODE-LASERS REVEALED BY HYDROSTATIC-PRESSURE
Authors: SWEENEY SJ HIGASHI T ADAMS AR UCHIDA T FUJII T
Citation: Sj. Sweeney et al., IMPROVED TEMPERATURE-DEPENDENCE OF 1.3 MU-M ALGALNAS-BASED MQW SEMICONDUCTOR DIODE-LASERS REVEALED BY HYDROSTATIC-PRESSURE, Electronics Letters, 34(22), 1998, pp. 2130-2132
STRAIN-OVERCOMPENSATED GAINP-ALGAINP QUANTUM-WELL LASER STRUCTURES FOR IMPROVED RELIABILITY AT HIGH-OUTPUT POWERS
Authors: VALSTER A MENEY AT DOWNES JR FAUX DA ADAMS AR BROUWER AA CORBIJN AJ
Citation: A. Valster et al., STRAIN-OVERCOMPENSATED GAINP-ALGAINP QUANTUM-WELL LASER STRUCTURES FOR IMPROVED RELIABILITY AT HIGH-OUTPUT POWERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 180-187
OPTIMIZATION OF 1.3-MU-M INGAASP COMPRESSIVELY STRAINED-QUANTUM-WELL LASERS
Authors: PACEY C SILVER M ADAMS AR OREILLY EP
Citation: C. Pacey et al., OPTIMIZATION OF 1.3-MU-M INGAASP COMPRESSIVELY STRAINED-QUANTUM-WELL LASERS, International journal of optoelectronics, 11(4), 1997, pp. 253-262
DEVICE FOR THE SIMULTANEOUS APPLICATION OF UNIAXIAL-STRESS AND HYDROSTATIC-PRESSURE - APPLICATION TO SEMICONDUCTOR-LASERS
Authors: WIDULLE F HELD JT HUBER M HOCHHEIMER HD KOTITSCHKE RT ADAMS AR
Citation: F. Widulle et al., DEVICE FOR THE SIMULTANEOUS APPLICATION OF UNIAXIAL-STRESS AND HYDROSTATIC-PRESSURE - APPLICATION TO SEMICONDUCTOR-LASERS, Review of scientific instruments, 68(11), 1997, pp. 3992-3995
A METHOD-OF-MOMENTS STUDY OF STRIP DIPOLE ANTENNAS IN RECTANGULAR WAVE-GUIDE
Authors: ADAMS AR POLLARD RD SNOWDEN CM
Citation: Ar. Adams et al., A METHOD-OF-MOMENTS STUDY OF STRIP DIPOLE ANTENNAS IN RECTANGULAR WAVE-GUIDE, IEEE transactions on microwave theory and techniques, 45(10), 1997, pp. 1756-1766
DETERMINATION OF THE WAVELENGTH DEPENDENCE OF AUGER RECOMBINATION IN LONG-WAVELENGTH QUANTUM-WELL SEMICONDUCTOR-LASERS USING HYDROSTATIC-PRESSURE
Authors: SILVER M OREILLY EP ADAMS AR
Citation: M. Silver et al., DETERMINATION OF THE WAVELENGTH DEPENDENCE OF AUGER RECOMBINATION IN LONG-WAVELENGTH QUANTUM-WELL SEMICONDUCTOR-LASERS USING HYDROSTATIC-PRESSURE, IEEE journal of quantum electronics, 33(9), 1997, pp. 1557-1566
DETERMINATION OF GAIN AND LOSS MECHANISMS IN SEMICONDUCTOR-LASERS USING PRESSURE TECHNIQUES
Authors: OREILLY EP JONES G SILVER M ADAMS AR
Citation: Ep. Oreilly et al., DETERMINATION OF GAIN AND LOSS MECHANISMS IN SEMICONDUCTOR-LASERS USING PRESSURE TECHNIQUES, Physica status solidi. b, Basic research, 198(1), 1996, pp. 363-373
HYDROSTATIC-PRESSURE DEPENDENCE OF THE THRESHOLD CURRENT IN 1.5 MU-M STRAINED-QUANTUM-WELL LASERS
Authors: ADAMS AR SILVER M OREILLY EP GONUL B PHILLIPS AF SWEENEY SJ THIJS PJA
Citation: Ar. Adams et al., HYDROSTATIC-PRESSURE DEPENDENCE OF THE THRESHOLD CURRENT IN 1.5 MU-M STRAINED-QUANTUM-WELL LASERS, Physica status solidi. b, Basic research, 198(1), 1996, pp. 381-388
DETERMINATION OF THE BAND-STRUCTURE OF DISORDERED ALGAINP AND ITS INFLUENCE ON VISIBLE-LASER CHARACTERISTICS
Authors: MENEY AT PRINS AD PHILLIPS AF SLY JL OREILLY EP DUNSTAN DJ ADAMS AR VALSTER A
Citation: At. Meney et al., DETERMINATION OF THE BAND-STRUCTURE OF DISORDERED ALGAINP AND ITS INFLUENCE ON VISIBLE-LASER CHARACTERISTICS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 697-706
PRESSURE-INDUCED SHALLOW-DEEP A(1) TRANSITION FOR SN DONOR IN GAAS OBSERVED IN DIAMOND-ANVIL CELL PHOTOLUMINESCENCE EXPERIMENT
Authors: DMOCHOWSKI JE STRADLING RA SLY J DUNSTAN DJ PRINS AD ADAMS AR
Citation: Je. Dmochowski et al., PRESSURE-INDUCED SHALLOW-DEEP A(1) TRANSITION FOR SN DONOR IN GAAS OBSERVED IN DIAMOND-ANVIL CELL PHOTOLUMINESCENCE EXPERIMENT, Acta Physica Polonica. A, 87(2), 1995, pp. 457-460
HIGH-PRESSURE DETERMINATION OF ALGAINP BAND-STRUCTURE
Authors: PRINS AD SLY JL MENEY AT DUNSTAN DJ OREILLY EP ADAMS AR VALSTER A
Citation: Ad. Prins et al., HIGH-PRESSURE DETERMINATION OF ALGAINP BAND-STRUCTURE, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 349-352
DIRECT MEASUREMENT OF BAND OFFSETS IN GAINP ALGAINP USING HIGH-PRESSURE/
Authors: PRINS AD SLY JL MENEY AT DUNSTAN DJ OREILLY EP ADAMS AR VALSTER A
Citation: Ad. Prins et al., DIRECT MEASUREMENT OF BAND OFFSETS IN GAINP ALGAINP USING HIGH-PRESSURE/, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 423-427
THE LIGHT-HOLE MASS IN A STRAINED INGAAS GAAS SINGLE-QUANTUM-WELL ANDITS PRESSURE-DEPENDENCE/
Authors: LANCEFIELD D ADAMS AR MENEY AT KNAP W LITWINSTASZEWSKA E SKIERBISZEWSKI C ROBERT JL
Citation: D. Lancefield et al., THE LIGHT-HOLE MASS IN A STRAINED INGAAS GAAS SINGLE-QUANTUM-WELL ANDITS PRESSURE-DEPENDENCE/, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 469-473
ROLE OF RADIATIVE AND NONRADIATIVE PROCESSES ON THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED 1.5 MU-M INGAAS(P) QUANTUM-WELL LASERS
Authors: BRAITHWAITE J SILVER M WILKINSON VA OREILLY EP ADAMS AR
Citation: J. Braithwaite et al., ROLE OF RADIATIVE AND NONRADIATIVE PROCESSES ON THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED 1.5 MU-M INGAAS(P) QUANTUM-WELL LASERS, Applied physics letters, 67(24), 1995, pp. 3546-3548
IMPACT IONIZATION IN GAAS - DISTRIBUTION OF FINAL ELECTRON-STATES DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS
Authors: ALLAM J ADAMS AR PATE MA ROBERTS JS
Citation: J. Allam et al., IMPACT IONIZATION IN GAAS - DISTRIBUTION OF FINAL ELECTRON-STATES DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS, Applied physics letters, 67(22), 1995, pp. 3304-3306
TAILORING THE HEAVY-HOLE AND LIGHT-HOLE QUANTUM-CONFINED STARK-EFFECTUSING MULTISTRAIN-STEPPED QUANTUM
Authors: SILVER M GREENE PD ADAMS AR
Citation: M. Silver et al., TAILORING THE HEAVY-HOLE AND LIGHT-HOLE QUANTUM-CONFINED STARK-EFFECTUSING MULTISTRAIN-STEPPED QUANTUM, Applied physics letters, 67(20), 1995, pp. 2904-2906
AVALANCHE BREAKDOWN IN ALXGA1-XAS ALLOYS AND AL0.3GA0.7AS GAAS MULTILAYERS/
Authors: DAVID JPR ALLAM J ADAMS AR ROBERTS JS GREY R REES GJ ROBSON PN
Citation: Jpr. David et al., AVALANCHE BREAKDOWN IN ALXGA1-XAS ALLOYS AND AL0.3GA0.7AS GAAS MULTILAYERS/, Applied physics letters, 66(21), 1995, pp. 2876-2878
PAIRING OF MN-ACCEPTORS AND TE-DONORS IN INP AND RELATED ALLOYS
Authors: ADAMS AR BENYON RP GREENE PD HALL HY
Citation: Ar. Adams et al., PAIRING OF MN-ACCEPTORS AND TE-DONORS IN INP AND RELATED ALLOYS, Solid state communications, 89(1), 1994, pp. 69-72
2-DIMENSIONAL SIMULATION OF CONSTRICTED-MESA INGAASP INP BURIED-HETEROSTRUCTURE LASERS/
Authors: GAULT M MAWBY P ADAMS AR TOWERS M
Citation: M. Gault et al., 2-DIMENSIONAL SIMULATION OF CONSTRICTED-MESA INGAASP INP BURIED-HETEROSTRUCTURE LASERS/, IEEE journal of quantum electronics, 30(8), 1994, pp. 1691-1700
BAND-STRUCTURE ENGINEERING IN STRAINED SEMICONDUCTOR-LASERS
Authors: OREILLY EP ADAMS AR
Citation: Ep. Oreilly et Ar. Adams, BAND-STRUCTURE ENGINEERING IN STRAINED SEMICONDUCTOR-LASERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 366-379
POLARIZATION-INSENSITIVE MODULATORS BASED ON MULTISTRAIN STEPPED QUANTUM-WELL STRUCTURES
Authors: SILVER M GREENE PD ADAMS AR
Citation: M. Silver et al., POLARIZATION-INSENSITIVE MODULATORS BASED ON MULTISTRAIN STEPPED QUANTUM-WELL STRUCTURES, Electronics Letters, 30(22), 1994, pp. 1890-1891
EVIDENCE OF GAMMA-FREE OR BOUND-TO-DEEP ACCEPTOR CHARACTER OF THE Y-1.2 EV DEEP PHOTOLUMINESCENCE LINE IN N-TYPE GE-DOPED GAAS DERIVED FROMHIGH HYDROSTATIC-PRESSURE EXPERIMENTS IN DIAMOND-ANVIL CELL
Authors: DMOCHOWSKI JE STRADLING RA PRINS AD DUNSTAN DJ ADAMS AR KUKIMOTO H
Citation: Je. Dmochowski et al., EVIDENCE OF GAMMA-FREE OR BOUND-TO-DEEP ACCEPTOR CHARACTER OF THE Y-1.2 EV DEEP PHOTOLUMINESCENCE LINE IN N-TYPE GE-DOPED GAAS DERIVED FROMHIGH HYDROSTATIC-PRESSURE EXPERIMENTS IN DIAMOND-ANVIL CELL, Acta Physica Polonica. A, 84(4), 1993, pp. 649-652
Risultati: 1-25 | 26-29