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Results: 1-25/109
Authors:
FAY P
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., THE KEY TO COMMUNICATING AT LIGHT SPEED, IEEE circuits and devices magazine, 14(5), 1998, pp. 16-25
Authors:
FAY P
WOHLMUTH W
MAHAJAN A
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., LOW-NOISE PERFORMANCE OF MONOLITHICALLY INTEGRATED 12-GB S P-I-N/HEMTPHOTORECEIVER FOR LONG-WAVELENGTH TRANSMISSION-SYSTEMS/, IEEE photonics technology letters, 10(5), 1998, pp. 713-715
Authors:
FAY P
WOHLMUTH W
MAHAJAN A
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., A COMPARATIVE-STUDY OF INTEGRATED PHOTORECEIVERS USING MSM HEMT AND PIN/HEMT TECHNOLOGIES/, IEEE photonics technology letters, 10(4), 1998, pp. 582-584
HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/
Authors:
CHEN Q
YANG JW
GASKA R
KHAN MA
SHUR MS
SULLIVAN GJ
SAILOR AL
HIGGINGS JA
PING AT
ADESIDA I
Citation: Q. Chen et al., HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, IEEE electron device letters, 19(2), 1998, pp. 44-46
Authors:
PING AT
CHEN Q
YANG JW
KHAN MA
ADESIDA I
Citation: At. Ping et al., DC AND MICROWAVE PERFORMANCE OF HIGH-CURRENT ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON P-TYPE SIC SUBSTRATES/, IEEE electron device letters, 19(2), 1998, pp. 54-56
Authors:
SENGUPTA DK
WEISMAN MB
FENG M
CHUANG SL
CHANG YC
COOPER L
ADESIDA I
BLOOM I
HSIEH KC
FANG W
MALIN JI
CURTIS AP
HORTON T
STILLMAN GE
GUNAPALA SD
BANDARA SV
POOL F
LIU JK
MCKELVEY M
LUONG E
HONG W
MUMOLO J
LIU HC
WANG WI
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF N-TYPE GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR ON GAAS-ON-SI SUBSTRATE/, Journal of electronic materials, 27(7), 1998, pp. 858-865
Authors:
ADESIDA I
GASKILL DK
MELLOCH MR
SPENCER M
Citation: I. Adesida et al., SPECIAL ISSUE PAPERS ON III-V NITRIDES AND SILICON-CARBIDE - FOREWORD, Journal of electronic materials, 27(4), 1998, pp. 159-159
Authors:
SCHMITZ AC
PING AT
KHAN MA
CHEN Q
YANG JW
ADESIDA I
Citation: Ac. Schmitz et al., METAL CONTACTS TO N-TYPE GAN, Journal of electronic materials, 27(4), 1998, pp. 255-260
Authors:
PING AT
CHEN Q
YANG JW
KHAN MA
ADESIDA I
Citation: At. Ping et al., THE EFFECTS OF REACTIVE ION ETCHING-INDUCED DAMAGE ON THE CHARACTERISTICS OF OHMIC CONTACTS TO N-TYPE GAN, Journal of electronic materials, 27(4), 1998, pp. 261-265
Authors:
YOUTSEY C
BULMAN G
ADESIDA I
Citation: C. Youtsey et al., DOPANT-SELECTIVE PHOTOENHANCED WET ETCHING OF GAN, Journal of electronic materials, 27(4), 1998, pp. 282-287
Authors:
MAHAJAN A
ARAFA M
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS (E-HEMTS) LATTICE-MATCHED TO INP, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2422-2429
Authors:
ARAFA M
WOHLMUTH WA
FAY P
ADESIDA I
Citation: M. Arafa et al., EFFECT OF DIFFRACTION AND INTERFERENCE IN SUBMICRON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 62-67
Authors:
MAHAJAN A
FAY P
ARAFA M
ADESIDA I
Citation: A. Mahajan et al., INTEGRATION OF INALAS INGAAS/INP ENHANCEMENT-MODE AND DEPLETION-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS FOR HIGH-SPEED CIRCUIT APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 338-340
Authors:
KUKSENKOV DV
GIUDICE GE
TEMKIN H
GASKA R
PING A
ADESIDA I
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES, Electronics Letters, 34(23), 1998, pp. 2274-2276
Authors:
YOUTSEY C
ROMANO LT
ADESIDA I
Citation: C. Youtsey et al., GALLIUM NITRIDE WHISKERS FORMED BY SELECTIVE PHOTOENHANCED WET ETCHING OF DISLOCATIONS, Applied physics letters, 73(6), 1998, pp. 797-799
Authors:
YOUTSEY C
ADESIDA I
ROMANO LT
BULMAN G
Citation: C. Youtsey et al., SMOOTH N-TYPE GAN SURFACES BY PHOTOENHANCED WET ETCHING, Applied physics letters, 72(5), 1998, pp. 560-562
Authors:
WOHLMUTH W
ARAFA M
FAY P
SEO JW
ADESIDA I
Citation: W. Wohlmuth et al., IMPULSE-RESPONSE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTORS USING A CONFORMAL MAPPING TECHNIQUE AND EXTRACTED CIRCUIT PARAMETERS, JPN J A P 1, 36(2), 1997, pp. 652-656
Authors:
HANNAN M
GRUNDBACHER R
FAY P
ADESIDA I
GIANNETTA RW
WAGNER CJ
MELLOCH MR
Citation: M. Hannan et al., FABRICATION AND TRANSPORT STUDY OF FINITE LATERAL SUPERLATTICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2821-2824
Authors:
GRUNDBACHER R
ADESIDA I
KAO YC
KETTERSON AA
Citation: R. Grundbacher et al., SINGLE-STEP LITHOGRAPHY FOR DOUBLE-RECESSED GATE PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 49-52
Authors:
FAY P
WOHLMUTH W
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., HIGH-SPEED DIGITAL AND ANALOG PERFORMANCE OF LOW-NOISE INTEGRATED MSM-HEMT PHOTORECEIVERS, IEEE photonics technology letters, 9(7), 1997, pp. 991-993
Authors:
WOHLMUTH WA
FAY P
VACCARO K
MARTIN EA
ADESIDA I
Citation: Wa. Wohlmuth et al., HIGH-SPEED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH THIN ABSORPTION LAYERS, IEEE photonics technology letters, 9(5), 1997, pp. 654-656
Authors:
OSOWSKI ML
PANEPUCCI R
ADESIDA I
COLEMAN JJ
Citation: Ml. Osowski et al., A STRAINED-LAYER INGAAS-GAAS ASYMMETRIC CLADDING GAIN-COUPLED DFB LASER WITH TITANIUM SURFACE GRATINGS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, IEEE photonics technology letters, 9(4), 1997, pp. 422-424
Authors:
LAMMERT RM
JONES AM
YOUTSEY CT
HUGHES JS
ROH SD
ADESIDA I
COLEMAN JJ
Citation: Rm. Lammert et al., INGAASP-INP RIDGE-WAVE-GUIDE DBR LASERS WITH FIRST-ORDER SURFACE GRATINGS FABRICATED USING CAIBE, IEEE photonics technology letters, 9(11), 1997, pp. 1445-1447
Authors:
WOHLMUTH WA
SEO JW
FAY P
CANEAU C
ADESIDA I
Citation: Wa. Wohlmuth et al., A HIGH-SPEED ITO-INALAS-INGAAS SCHOTTKY-BARRIER PHOTODETECTOR, IEEE photonics technology letters, 9(10), 1997, pp. 1388-1390
Authors:
SOOLE JBD
CANEAU C
LEBLANC HP
ANDREADAKIS NC
RAJHEL A
YOUTSEY C
ADESIDA I
Citation: Jbd. Soole et al., SUPPRESSION OF MODAL BIREFRINGENCE IN INP-INGAASP WAVE-GUIDES THROUGHUSE OF COMPENSATED TENSILE STRAIN, IEEE photonics technology letters, 9(1), 1997, pp. 61-63