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Results: 76-100/109
Authors:
NUMMILA K
KETTERSON AA
ADESIDA I
Citation: K. Nummila et al., DELAY-TIME ANALYSIS FOR SHORT GATE-LENGTH GAAS-MESFETS, Solid-state electronics, 38(2), 1995, pp. 517-524
Authors:
FAY P
WOHLMUTH W
CANEAU C
ADESIDA I
Citation: P. Fay et al., 15GHZ MONOLITHIC MODFET-MSM INTEGRATED PHOTORECEIVER OPERATING AT 1.55-MU-M WAVELENGTH, Electronics Letters, 31(9), 1995, pp. 755-756
Authors:
ARAFA M
ISMAIL K
FAY P
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., HIGH-TRANSCONDUCTANCE P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR, Electronics Letters, 31(8), 1995, pp. 680-681
Authors:
PING AT
ADESIDA I
KHAN MA
Citation: At. Ping et al., STUDY OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAN USING HCL-GAS, Applied physics letters, 67(9), 1995, pp. 1250-1252
Authors:
PAN N
ELLIOTT J
HENDRIKS H
AUCOIN L
FAY P
ADESIDA I
Citation: N. Pan et al., INALAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON LOW-TEMPERATURE INALAS BUFFER LAYERS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 66(2), 1995, pp. 212-214
Authors:
ARCHER A
HETRICK JM
NAYFEH MH
ADESIDA I
Citation: A. Archer et al., NANOFABRICATION ON ELECTRON-BEAM RESIST USING SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3166-3170
Authors:
ADESIDA I
Citation: I. Adesida, PAPERS FROM THE 38TH INTERNATIONAL-SYMPOSIUM ON ELECTRON, ION, AND PHOTON BEAMS - PREFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3235-3235
Authors:
YOUTSEY C
GRUNDBACHER R
PANEPUCCI R
ADESIDA I
CANEAU C
Citation: C. Youtsey et al., CHARACTERIZATION OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF INP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3317-3321
Authors:
FAY P
AGARWALA S
SCAFIDI C
ADESIDA I
CANEAU C
BHAT R
Citation: P. Fay et al., REACTIVE ION ETCHING-INDUCED DAMAGE IN INALAS INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS PROCESSED IN HBR PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3322-3326
Authors:
ARAFA M
YOUTSEY C
GRUNDBACHER R
ADESIDA I
KLEM J
Citation: M. Arafa et al., FABRICATION OF NANOSTRUCTURES IN ALGASB INAS USING ELECTRON-BEAM LITHOGRAPHY AND CHEMICALLY ASSISTED ION-BEAM ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3623-3625
Authors:
GRUNDBACHER R
FAY P
ADESIDA I
Citation: R. Grundbacher et al., FABRICATION AND CHARACTERIZATION OF INALAS INGAAS STRIPED-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3750-3754
Authors:
REUTER EE
GU SQ
XU Q
WOHLMUTH W
ADESIDA I
BISHOP SG
Citation: Ee. Reuter et al., PHOTO-INJECTED CARRIER DISTRIBUTIONS IN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS IMAGED BY PHOTOLUMINESCENCE MICROSCOPY, IEEE photonics technology letters, 6(8), 1994, pp. 966-970
Authors:
CHANG H
GRUNDBACHER R
KAWANURA T
LEBURTON JP
ADESIDA I
Citation: H. Chang et al., OSCILLATORY CONDUCTANCE IN A DOUBLE-BEND QUANTUM-DOT DEVICE, Semiconductor science and technology, 9(2), 1994, pp. 210-212
Authors:
JOVANOVIC D
LEBURTON JP
CHANG H
GRUNDBACHER R
ADESIDA I
Citation: D. Jovanovic et al., DISORDER-INDUCED RESONANT-TUNNELING IN PLANAR QUANTUM-DOT NANOSTRUCTURES, Physical review. B, Condensed matter, 50(8), 1994, pp. 5412-5419
Authors:
MASLAR JE
DORSTEN JF
BOHN PW
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: Je. Maslar et al., ELECTRON-PHONON INTERACTIONS IN N-TYPE IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING, Physical review. B, Condensed matter, 50(23), 1994, pp. 17143-17150
Authors:
CHANG H
GRUNDBACHER R
JOVANOVIC D
LEBURTON JP
ADESIDA I
Citation: H. Chang et al., A LATERALLY TUNABLE QUANTUM-DOT TRANSISTOR, Journal of applied physics, 76(5), 1994, pp. 3209-3211
Authors:
GU SQ
LIU X
COVINGTON M
REUTER E
CHANG H
PANEPUCCI R
ADESIDA I
BISHOP SG
CANEAU C
BHAT R
Citation: Sq. Gu et al., PHOTOLUMINESCENCE STUDIES OF SIDEWALL PROPERTIES OF DRY-ETCHED INGAASINP QUANTUM WIRES/, Journal of applied physics, 75(12), 1994, pp. 8071-8074
Authors:
FAY P
BROCKENBROUGH RT
ABELN G
SCOTT P
AGARWALA S
ADESIDA I
LYDING JW
Citation: P. Fay et al., SCANNING TUNNELING MICROSCOPE STIMULATED OXIDATION OF SILICON (100) SURFACES, Journal of applied physics, 75(11), 1994, pp. 7545-7549
Authors:
PING AT
ADESIDA I
KHAN MA
KUZNIA JN
Citation: At. Ping et al., REACTIVE ION ETCHING OF GALLIUM NITRIDE USING HYDROGEN BROMIDE PLASMAS, Electronics Letters, 30(22), 1994, pp. 1895-1897
Authors:
ADESIDA I
PING AT
YOUTSEY C
DOW T
KHAN MA
OLSON DT
KUZNIA JN
Citation: I. Adesida et al., CHARACTERISTICS OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE, Applied physics letters, 65(7), 1994, pp. 889-891
Authors:
MASLAR JE
BOHN PW
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: Je. Maslar et al., SPUTTER-INDUCED FORMATION OF AN ELECTRON ACCUMULATION LAYER IN IN0.52AL0.48AS, Applied physics letters, 64(26), 1994, pp. 3575-3577
Authors:
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: S. Agarwala et al., DEPTH DISTRIBUTION OF REACTIVE ION ETCHING-INDUCED DAMAGE IN INALAS INGAAS HETEROSTRUCTURES EVALUATED BY HALL MEASUREMENTS, Applied physics letters, 64(22), 1994, pp. 2979-2981
Authors:
GRUNDBACHER R
CHANG H
HANNAN M
ADESIDA I
Citation: R. Grundbacher et al., FABRICATION OF PARALLEL QUANTUM WIRES IN GAAS ALGAAS HETEROSTRUCTURESUSING ALAS ETCH-STOP LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2254-2257
Authors:
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: S. Agarwala et al., CHARACTERISTICS OF SELECTIVE REACTIVE ION ETCHING OF INGAAS INALAS HETEROSTRUCTURES USING HBR PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2258-2261
Authors:
BALLEGEER DG
NUMMILA K
ADESIDA I
Citation: Dg. Ballegeer et al., MULTILAYER RESIST PROCESS FOR ASYMMETRIC GATE RECESS IN FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2560-2564