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Results:
1-16
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Results: 16
Authors:
RHIE JW
HAN SB
BYEON JH
AHN ST
KIM HM
Citation: Jw. Rhie et al., EFFICIENT IN-VITRO MODEL FOR IMMUNOTOXICOLOGIC ASSESSMENT OF MAMMARY SILICONE IMPLANTS, Plastic and reconstructive surgery, 102(1), 1998, pp. 73-77
Authors:
KIM J
AHN ST
Citation: J. Kim et St. Ahn, IMPROVEMENT OF THE TUNNEL OXIDE QUALITY BY A LOW THERMAL BUDGET DUAL OXIDATION FOR FLASH MEMORIES, IEEE electron device letters, 18(8), 1997, pp. 385-387
Authors:
KIM JK
SAKUI K
LEE SS
ITOH Y
KWON SC
KANAZAWA K
LEE KJ
NAKAMURA H
KIM KY
HIMENO T
KIM JR
KANDA K
JUNG TS
OSHIMA Y
SUH KD
HASHIMOTO K
AHN ST
MIYAMOTO J
Citation: Jk. Kim et al., A 120-MM(2) 64-MB NAND FLASH MEMORY ACHIEVING 180-NS BYTE EFFECTIVE PROGRAM SPEED/, IEEE journal of solid-state circuits, 32(5), 1997, pp. 670-680
Authors:
KIM ST
KIM JW
JUNG SW
SHIN JS
AHN ST
LEE WJ
Citation: St. Kim et al., ELECTRICAL-PROPERTIES OF PZT THIN-FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Materials chemistry and physics, 45(2), 1996, pp. 155-158
Authors:
PAEK SH
WON JH
JANG JE
HWANG YS
MAH JP
CHOI JS
AHN ST
LEE JG
PARK CS
Citation: Sh. Paek et al., CHARACTERISTICS OF SRTIO3 THIN-FILMS DEPOSITED UNDER VARIOUS OXYGEN PARTIAL PRESSURES, Journal of Materials Science, 31(16), 1996, pp. 4357-4362
Authors:
KWON KW
KANG CS
PARK SO
KANG HK
AHN ST
Citation: Kw. Kwon et al., THERMALLY ROBUST TA2O5 CAPACITOR FOR THE 256-MBIT DRAM, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 919-923
Authors:
HWANG CS
PARK SO
KANG CS
CHO HJ
KANG HK
AHN ST
LEE MY
Citation: Cs. Hwang et al., DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION, JPN J A P 1, 34(9B), 1995, pp. 5178-5183
Authors:
CHOI GH
LEE SI
PARK CS
PARK IS
AHN ST
KIM YK
REYNOLDS R
Citation: Gh. Choi et al., AL-REFLOW PROCESS WITH A CAP-CLAMP FOR SUBMICRON CONTACT HOLES, JPN J A P 1, 34(2B), 1995, pp. 1026-1029
Authors:
CHANG YH
WON SJ
OH JE
PAEK SH
LEE HD
CHOI JS
LEE SI
AHN ST
LEE JG
Citation: Yh. Chang et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF TITANIUM NITRIDE BARRIER METALS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 34(7B), 1995, pp. 907-910
Authors:
KIM IL
KIM JS
KWON OS
AHN ST
CHUN JS
LEE WJ
Citation: Il. Kim et al., EFFECTS OF ANNEALING IN O-2 AND N-2 ON THE ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(10), 1995, pp. 1435-1441
Authors:
PARK TS
AHN SJ
AHN ST
Citation: Ts. Park et al., A NOVEL LOCAL OXIDATION OF SILICON (LOCOS)-TYPE ISOLATION TECHNOLOGY FREE OF THE FIELD OXIDE THINNING EFFECT, JPN J A P 1, 33(1B), 1994, pp. 435-439
Authors:
LEE NI
KIM YW
AHN ST
Citation: Ni. Lee et al., EFFECT OF THE SILICIDATION REACTION CONDITION ON THE GATE OXIDE INTEGRITY IN TI-POLYCIDE GATE, JPN J A P 1, 33(1B), 1994, pp. 672-677
Authors:
KIM I
AHN SD
CHO BW
AHN ST
LEE JY
CHUN JS
LEE WJ
Citation: I. Kim et al., MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILM PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(12A), 1994, pp. 6691-6698
Authors:
KIM KH
KO DH
KANG SH
KIM ST
SHIM SJ
KIM ES
AHN ST
Citation: Kh. Kim et al., CHARACTERISTICS OF THE NO DIELECTRIC FILM WITH LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION IN-SITU NITRIDATION, Journal of electronic materials, 23(12), 1994, pp. 1273-1278
Authors:
AHN ST
HAYASHIDA S
IGUCHI K
TAKAGI J
WATANABE T
SAKIYAMA K
Citation: St. Ahn et al., HOT-CARRIER DEGRADATION OF SINGLE-DRAIN PMOSFETS WITH DIFFERING SIDEWALL SPACER THICKNESSES, IEEE electron device letters, 13(4), 1992, pp. 211-213
Authors:
AHN ST
HAYASHIDA S
IGUCHI K
UDA K
TAKAGI J
Citation: St. Ahn et al., EFFECT OF SIDEWALL SPACER THICKNESS ON HOT-CARRIER DEGRADATION OF PMOS TRANSISTORS, Semiconductor science and technology, 7(3B), 1992, pp. 585-589
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1-16
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