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Results: 1-10 |
Results: 10
MECHANISMS OF FORMATION AND TOPOLOGICAL ANALYSIS OF POROUS SILICON - COMPUTATIONAL MODELING
Authors: ALEKSANDROV LN NOVIKOV PL
Citation: Ln. Aleksandrov et Pl. Novikov, MECHANISMS OF FORMATION AND TOPOLOGICAL ANALYSIS OF POROUS SILICON - COMPUTATIONAL MODELING, Computational materials science, 10(1-4), 1998, pp. 406-410
MORPHOLOGY OF POROUS SILICON STRUCTURES FORMED BY ANODIZATION OF HEAVILY AND LIGHTLY DOPED SILICON
Authors: ALEKSANDROV LN NOVIKOV PL
Citation: Ln. Aleksandrov et Pl. Novikov, MORPHOLOGY OF POROUS SILICON STRUCTURES FORMED BY ANODIZATION OF HEAVILY AND LIGHTLY DOPED SILICON, Thin solid films, 330(2), 1998, pp. 102-107
MECHANISM OF SILICON EPITAXY ON POROUS SILICON LAYERS
Authors: NOVIKOV PL ALEKSANDROV LN DVURECHENSKII AV ZINOVEV VA
Citation: Pl. Novikov et al., MECHANISM OF SILICON EPITAXY ON POROUS SILICON LAYERS, JETP letters, 67(7), 1998, pp. 539-544
SIMULATION OF THE FORMATION OF POROUS-SILICON STRUCTURES
Authors: ALEKSANDROV LN NOVIKOV PL
Citation: Ln. Aleksandrov et Pl. Novikov, SIMULATION OF THE FORMATION OF POROUS-SILICON STRUCTURES, JETP letters, 65(9), 1997, pp. 714-719
KINETICS OF PHASE-TRANSITIONS IN POROUS MATERIALS
Authors: ALEKSANDROV LN NOVIKOV PL
Citation: Ln. Aleksandrov et Pl. Novikov, KINETICS OF PHASE-TRANSITIONS IN POROUS MATERIALS, Physica status solidi. a, Applied research, 158(2), 1996, pp. 419-426
THE STUDY OF WHISKER GROWTH BY THE MONTE-CARLO METHOD
Authors: ALEKSANDROV LN KOGAN AN MORDYUK VS ROSLANOVA OV TICHONOVA NP
Citation: Ln. Aleksandrov et al., THE STUDY OF WHISKER GROWTH BY THE MONTE-CARLO METHOD, Physica status solidi. a, Applied research, 147(2), 1995, pp. 461-466
STUDY OF FILM CRYSTALLIZATION KINETICS INITIAL-STAGE BY MONTE-CARLO SIMULATION
Authors: ALEKSANDROV LN BOCHKOVA RV KISELEV GB ENTIN IA
Citation: Ln. Aleksandrov et al., STUDY OF FILM CRYSTALLIZATION KINETICS INITIAL-STAGE BY MONTE-CARLO SIMULATION, Crystal research and technology, 29(1), 1994, pp. 25-31
MODELING OF LAYER-BY-LAYER SPUTTERING OF SI(111) SURFACES UNDER IRRADIATION WITH LOW-ENERGY IONS
Authors: ZINOVYEV VA ALEKSANDROV LN DVURECHENSKII AV HEINIG KH STOCK D
Citation: Va. Zinovyev et al., MODELING OF LAYER-BY-LAYER SPUTTERING OF SI(111) SURFACES UNDER IRRADIATION WITH LOW-ENERGY IONS, Thin solid films, 241(1-2), 1994, pp. 167-170
STRESSES AND DISLOCATION FORMATION IN THIN-FILMS
Authors: ALEKSANDROV LN MITLINA LA KOSTILOV VN YANKOVSKAYA TV
Citation: Ln. Aleksandrov et al., STRESSES AND DISLOCATION FORMATION IN THIN-FILMS, Physica status solidi. a, Applied research, 145(2), 1994, pp. 255-262
INTERFERENCE EFFECTS AT LASER-PULSE HEATING OF MULTILAYER STRUCTURES
Authors: BALANDIN VY ALEKSANDROV LN DVURECHENSKII AV KULYASOVA OA
Citation: Vy. Balandin et al., INTERFERENCE EFFECTS AT LASER-PULSE HEATING OF MULTILAYER STRUCTURES, Physica status solidi. a, Applied research, 142(1), 1994, pp. 99-105
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