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Results: 1-10 |
Results: 10
UNIFORMITY STUDY IN PM-HEMT STRUCTURES AND DEVICES BY OPTICAL AND ELECTRICAL CHARACTERIZATION
Authors: ANDROULIDAKI M MICHELAKIS C LAGADAS M FOUKARAKI V PANAYOTATOS P
Citation: M. Androulidaki et al., UNIFORMITY STUDY IN PM-HEMT STRUCTURES AND DEVICES BY OPTICAL AND ELECTRICAL CHARACTERIZATION, Microelectronic engineering, 43-4, 1998, pp. 567-573
LATTICE MISMATCH AND CONDUCTIVITY IN LTALGAAS LAYERS
Authors: LAGADAS M CALAMIOTOU M ANDROULIDAKI M HATZOPOULOS Z CHRISTOU A
Citation: M. Lagadas et al., LATTICE MISMATCH AND CONDUCTIVITY IN LTALGAAS LAYERS, Microelectronic engineering, 43-4, 1998, pp. 575-580
DEPENDENCE OF ARSENIC ANTISITE DEFECT CONCENTRATION AND 2-DIMENSIONALGROWTH MODE ON LT GAAS GROWTH-CONDITIONS
Authors: LAGADAS M ANDROULIDAKI M HATZOPOULOS Z CALAMIOTOU M
Citation: M. Lagadas et al., DEPENDENCE OF ARSENIC ANTISITE DEFECT CONCENTRATION AND 2-DIMENSIONALGROWTH MODE ON LT GAAS GROWTH-CONDITIONS, Microelectronic engineering, 43-4, 1998, pp. 581-586
RF-SPUTTERED INDIUM-TIN-OXIDE AS ANTIREFLECTIVE COATING FOR GAAS SOLAR-CELLS
Authors: APERATHITIS E HATZOPOULOS Z ANDROULIDAKI M FOUKARAKI V KONDILIS A SCOTT CG SANDS D PANAYOTATOS P
Citation: E. Aperathitis et al., RF-SPUTTERED INDIUM-TIN-OXIDE AS ANTIREFLECTIVE COATING FOR GAAS SOLAR-CELLS, Solar energy materials and solar cells, 45(2), 1997, pp. 161-168
INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: ELMEKKI MB PASCUAL J ANDROULIDAKI M ZEKENTES K CAMASSEL J STOEMENOS J
Citation: Mb. Elmekki et al., INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, DIAMOND AND RELATED MATERIALS, 6(12), 1997, pp. 1772-1776
ELECTRICAL-PROPERTIES OF N-GAAS EPILAYERS, FET AND HEMT STRUCTURES GROWN ON LT-GAAS BY MBE
Authors: LAGADAS M HATZOPOULOS Z KORNILIOS N ANDROULIDAKI M CHRISTOU A PANAYOTATOS P
Citation: M. Lagadas et al., ELECTRICAL-PROPERTIES OF N-GAAS EPILAYERS, FET AND HEMT STRUCTURES GROWN ON LT-GAAS BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 355-358
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES
Authors: ZEKENTES K BECOURT N ANDROULIDAKI M TSAGARAKI K STOEMENOS J BLUET JM CAMASSEL J PASCUAL J
Citation: K. Zekentes et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES, Applied surface science, 102, 1996, pp. 22-27
SHORT-LASER-PULSE AND STEADY-LIGHT INDUCED DEGRADATION OF INTRINSIC, P-TYPE AND COMPENSATED A-SI-H
Authors: TZANETAKIS P KOPIDAKIS N ANDROULIDAKI M KALPOUZOS C STRADINS P FRITZSCHE H
Citation: P. Tzanetakis et al., SHORT-LASER-PULSE AND STEADY-LIGHT INDUCED DEGRADATION OF INTRINSIC, P-TYPE AND COMPENSATED A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 458-461
PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H AND THE EFFECT OF BIAS LIGHT ON THE DRIFT MOBILITY
Authors: TZANETAKIS P FRITZSCHE H TRAN MQ ANDROULIDAKI M RYNES E
Citation: P. Tzanetakis et al., PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H AND THE EFFECT OF BIAS LIGHT ON THE DRIFT MOBILITY, Journal of non-crystalline solids, 166, 1993, pp. 607-610
DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/
Authors: DIMOULAS A ZEKENTES K ANDROULIDAKI M KORNELIOS N MICHELAKIS C HATZOPOULOS Z
Citation: A. Dimoulas et al., DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Applied physics letters, 63(10), 1993, pp. 1417-1419
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