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Results:
1-13
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Results: 13
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A NOVEL EXPERIMENTAL-TECHNIQUE FOR THE LATERAL PROFILING OF OXIDE ANDINTERFACE STATE CHARGES IN HOT-HOLE DEGRADED N-MOSFETS, IEEE electron device letters, 19(1), 1998, pp. 23-25
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A COMPARISON OF HOT-CARRIER DEGRADATION IN TUNGSTEN POLYCIDE GATE ANDPOLY GATE P-MOSFETS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 895-903
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A UNIFIED MODEL FOR THE SELF-LIMITING HOT-CARRIER DEGRADATION IN LDD N-MOSFET, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 149-159
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A NEW ASSESSMENT OF THE SELF-LIMITING HOT-CARRIER DEGRADATION IN LDD NMOSFETS BY CHARGE-PUMPING MEASUREMENT, IEEE electron device letters, 18(6), 1997, pp. 299-301
Authors:
LING CH
ANG DS
OOI JA
Citation: Ch. Ling et al., THE EFFECTS OF POLYSILICON DOPANT DEPLETION AND FOWLER-NORDHEIM TUNNELING ON THE CHARACTERISTICS OF N-OXIDE-SILICON CAPACITORS( POLYSILICON), Semiconductor science and technology, 12(3), 1997, pp. 245-251
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, EFFECTS OF TUNGSTEN POLYCIDATION ON THE HOT-CARRIER DEGRADATION IN BURIED-CHANNEL LDD P-MOSFET, JPN J A P 2, 35(12A), 1996, pp. 1572-1574
Authors:
LING CH
ANG DS
DUTOIT M
Citation: Ch. Ling et al., EXTRACTION OF CHANNEL-LENGTH IN 0.1 MU-M NMOSFET BY GATE TO DRAIN CAPACITANCE, Electronics Letters, 32(4), 1996, pp. 402-404
Authors:
LING CH
OOI JA
ANG DS
Citation: Ch. Ling et al., EFFECTS OF TUNGSTEN SILICIDATION ON FOWLER-NORDHEIM TUNNELING CURRENTAND CHARGE TRAPPING IN POLYSILICON-OXIDE-SILICON CAPACITORS, Electronics Letters, 32(10), 1996, pp. 933-934
Authors:
ANG DS
LING CH
YEOW YT
Citation: Ds. Ang et al., STUDY OF HOT-CARRIER DEGRADATION IN SUBMICROMETER LDD-NMOSFETS FROM 1F NOISE AND CHARGE-PUMPING CURRENT MEASUREMENTS AT DIFFERENT TEMPERATURE ANNEALS/, Microelectronic engineering, 28(1-4), 1995, pp. 257-260
Authors:
LING CH
ANG DS
TAN SE
Citation: Ch. Ling et al., EFFECTS OF MEASUREMENT FREQUENCY AND TEMPERATURE ANNEAL ON DIFFERENTIAL GATE CAPACITANCE SPECTRA OBSERVED IN HOT-CARRIER STRESSED MOSFETS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1528-1535
Authors:
LING CH
TAN SE
ANG DS
Citation: Ch. Ling et al., A STUDY OF HOT-CARRIER DEGRADATION IN NMOSFETS BY GATE CAPACITANCE AND CHARGE-PUMPING CURRENT, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1321-1328
Authors:
LING CH
AH LK
CHOI WK
TAN SE
ANG DS
Citation: Ch. Ling et al., HOT-ELECTRON DEGRADATION IN NMOSFETS - RESULTS FROM TEMPERATURE ANNEAL, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1303-1305
Authors:
LING CH
ANG DS
TAN SE
Citation: Ch. Ling et al., SPATIALLY UNIFORM DEGRADATION IN NMOSFETS - EVIDENCE FROM GATE CAPACITANCE AND CHARGE-PUMPING CURRENT, Electronics Letters, 30(20), 1994, pp. 1720-1722
Risultati:
1-13
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