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Results: 1-21 |
Results: 21

Authors: DEGER C BORN E ANGERER H AMBACHER O STUTZMANN M HORNSTEINER J RIHA E FISCHERAUER G
Citation: C. Deger et al., SOUND-VELOCITY OF ALXGA1-XN THIN-FILMS OBTAINED BY SURFACE-ACOUSTIC-WAVE MEASUREMENTS, Applied physics letters, 72(19), 1998, pp. 2400-2402

Authors: AMBACHER O FREUDENBERG F DIMITROV R ANGERER H STUTZMANN M
Citation: O. Ambacher et al., NITROGEN EFFUSION AND SELF-DIFFUSION IN (GAN)-N-14 (GAN)-N-15 ISOTOPEHETEROSTRUCTURES/, JPN J A P 1, 37(5A), 1998, pp. 2416-2421

Authors: KAISER S PREIS H GEBHARDT W AMBACHER O ANGERER H STUTZMANN M ROSENAUER A GERTHSEN D
Citation: S. Kaiser et al., QUANTITATIVE TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE RELAXATION BY MISFIT DISLOCATIONS CONFINED AT THE INTERFACE OF GAN AL2O3(0001)/, JPN J A P 1, 37(1), 1998, pp. 84-89

Authors: STUTZMANN M AMBACHER O ANGERER H NEBEL CE ROHRER E
Citation: M. Stutzmann et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF ALGAN - A COMPARISON WITH CVDDIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 123-128

Authors: BRANDT MS HERBST P ANGERER H AMBACHER O STUTZMANN M
Citation: Ms. Brandt et al., THERMOPOWER INVESTIGATION OF N-TYPE AND P-TYPE GAN, Physical review. B, Condensed matter, 58(12), 1998, pp. 7786-7791

Authors: WETHKAMP T WILMERS K ESSER N RICHTER W AMBACHER O ANGERER H JUNGK G JOHNSON RL CARDONA M
Citation: T. Wethkamp et al., SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS OF ALXGA1-XN IN THE ENERGY-RANGE 3-25EV, Thin solid films, 313, 1998, pp. 745-750

Authors: KAZIMIROV A SCHERB G ZEGENHAGEN J LEE TL BEDZYK MJ KELLY MK ANGERER H AMBACHER O
Citation: A. Kazimirov et al., POLARITY DETERMINATION OF A GAN THIN-FILM ON SAPPHIRE (0001) WITH X-RAY STANDING WAVES, Journal of applied physics, 84(3), 1998, pp. 1703-1705

Authors: STUTZMANN M AMBACHER O CROS A BRANDT MS ANGERER H DIMITROV R REINACHER N METZGER T HOPLER R BRUNNER D FREUDENBERG F HANDSCHUH R DEGER C
Citation: M. Stutzmann et al., PROPERTIES AND APPLICATIONS OF MBE GROWN ALGAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 212-218

Authors: CROS A ANGERER H AMBACHER O STUTZMANN M HOPLER R METZGER T
Citation: A. Cros et al., RAMAN-STUDY OF THE OPTICAL PHONONS IN ALXGA1-XN ALLOYS, Solid state communications, 104(1), 1997, pp. 35-39

Authors: AMBACHER O ANGERER H DIMITROV R RIEGER W STUTZMANN M DOLLINGER G BERGMAIER A
Citation: O. Ambacher et al., HYDROGEN IN GALLIUM NITRIDE GROWN BY MOCVD, Physica status solidi. a, Applied research, 159(1), 1997, pp. 105-119

Authors: CROS A DIMITROV R ANGERER H AMBACHER O STUTZMANN M CHRISTIANSEN S ALBRECHT M STRUNK HP
Citation: A. Cros et al., INFLUENCE OF MAGNESIUM DOPING ON THE STRUCTURAL-PROPERTIES OF GAN LAYERS, Journal of crystal growth, 181(3), 1997, pp. 197-203

Authors: BRUNNER D ANGERER H BUSTARRET E FREUDENBERG F HOPLER R DIMITROV R AMBACHER O STUTZMANN M
Citation: D. Brunner et al., OPTICAL-CONSTANTS OF EPITAXIAL ALGAN FILMS AND THEIR TEMPERATURE-DEPENDENCE, Journal of applied physics, 82(10), 1997, pp. 5090-5096

Authors: ANGERER H BRUNNER D FREUDENBERG F AMBACHER O STUTZMANN M HOPLER R METZGER T BORN E DOLLINGER G BERGMAIER A KARSCH S KORNER HJ
Citation: H. Angerer et al., DETERMINATION OF THE AL MOLE FRACTION AND THE BAND-GAP BOWING OF EPITAXIAL ALXGA1-XN FILMS, Applied physics letters, 71(11), 1997, pp. 1504-1506

Authors: FISCHER RA MIEHR A METZGER T BORN E AMBACHER O ANGERER H DIMITROV R
Citation: Ra. Fischer et al., LOW-TEMPERATURE OMCVD OF INN THIN-FILMS FROM THE NOVEL AIR-STABLE SINGLE-MOLECULE PRECURSOR AZIDO(BIS[(3-DIMETHYLAMINO)PROPYL])INDIUM, (N-3)IN[(CH2)(3)NME(2)](2), Chemistry of materials, 8(7), 1996, pp. 1356

Authors: METZGER T ANGERER H AMBACHER O STUTZMANN M BORN E
Citation: T. Metzger et al., X-RAY-DIFFRACTION STUDY OF GALLIUM NITRIDE GROWN BY MOCVD, Physica status solidi. b, Basic research, 193(2), 1996, pp. 391-397

Authors: AMBACHER O RIEGER W ANSMANN P ANGERER H MOUSTAKAS TD STUTZMANN M
Citation: O. Ambacher et al., SUB-BANDGAP ABSORPTION OF GALLIUM NITRIDE DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, Solid state communications, 97(5), 1996, pp. 365-370

Authors: KELLY MK AMBACHER O DAHLHEIMER B GROOS G DIMITROV R ANGERER H STUTZMANN M
Citation: Mk. Kelly et al., OPTICAL PATTERNING OF GAN FILMS, Applied physics letters, 69(12), 1996, pp. 1749-1751

Authors: RIEGER W METZGER T ANGERER H DIMITROV R AMBACHER O STUTZMANN M
Citation: W. Rieger et al., INFLUENCE OF SUBSTRATE-INDUCED BIAXIAL COMPRESSIVE STRESS ON THE OPTICAL-PROPERTIES OF THIN GAN FILMS, Applied physics letters, 68(7), 1996, pp. 970-972

Authors: CHALKER PR JOHNSTON C ROMANI S AYRES CF BUCKLEYGOLDER IM KROTZ G ANGERER H MULLER G VEPREK S KUNSTMANN T LEGNER W SMITH LM LEESE AB JONES AC RUSHWORTH SA
Citation: Pr. Chalker et al., FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 632-636

Authors: KUNSTMANN T ANGERER H KNECHT J VEPREK S MITZEL NW SCHMIDBAUR H
Citation: T. Kunstmann et al., NOVEL BROMINATED CARBOSILANE PRECURSORS FOR LOW-TEMPERATURE HETEROEPITAXY OF BETA-SIC AND THEIR COMPARISON WITH METHYLTRICHLOROSILANE, Chemistry of materials, 7(9), 1995, pp. 1675-1679

Authors: OTT J ANGERER H VONEGIDY T GEORGII R
Citation: J. Ott et al., A POSITION-SENSITIVE CATHODE STRIP DETECTOR WITH SINGLE STRIP READOUT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 367(1-3), 1995, pp. 280-284
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