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Results: 1-19 |
Results: 19
EXPERIMENTAL AND COMPUTATIONAL STUDY OF THE INTRAMOLECULAR REACTIVITYOF FREE TERT-BUTYLPHENYLMETHYLENE - MODIFICATION OF THE CHEMISTRY OF TERT-BUTYLMETHYLENE BY THE INTRODUCTION OF A PHENYL GROUP
Authors: ARMSTRONG BM MCKEE ML SHEVLIN PB
Citation: Bm. Armstrong et al., EXPERIMENTAL AND COMPUTATIONAL STUDY OF THE INTRAMOLECULAR REACTIVITYOF FREE TERT-BUTYLPHENYLMETHYLENE - MODIFICATION OF THE CHEMISTRY OF TERT-BUTYLMETHYLENE BY THE INTRODUCTION OF A PHENYL GROUP, Journal of organic chemistry, 63(21), 1998, pp. 7408-7412
INHIBITORY ACTIVITY OF SULFENTRAZONE AND ITS METABOLIC DERIVATIVES ONSOYBEAN (GLYCINE-MAX) PROTOPORPHYRINOGEN OXIDASE
Authors: DAYAN FE ARMSTRONG BM WEETE JD
Citation: Fe. Dayan et al., INHIBITORY ACTIVITY OF SULFENTRAZONE AND ITS METABOLIC DERIVATIVES ONSOYBEAN (GLYCINE-MAX) PROTOPORPHYRINOGEN OXIDASE, Journal of agricultural and food chemistry, 46(5), 1998, pp. 2024-2029
CHARACTERISTICS OF TRENCHED COPLANAR WAVE-GUIDE FOR HIGH-RESISTIVITY SI MMIC APPLICATIONS
Authors: YANG SD HU ZR BUCHANAN NB FUSCO VF STEWART JAC WU YH ARMSTRONG BM ARMSTRONG GA GAMBLE HS
Citation: Sd. Yang et al., CHARACTERISTICS OF TRENCHED COPLANAR WAVE-GUIDE FOR HIGH-RESISTIVITY SI MMIC APPLICATIONS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 623-631
MICROWAVE PTSI-SI SCHOTTKY-BARRIER-DETECTOR DIODE FABRICATION USING AN IMPLANTED ACTIVE LAYER ON HIGH-RESISTIVITY SILICON SUBSTRATE
Authors: WU YH ARMSTRONG BM GAMBLE HS HU ZR CHEN Q YANG SD FUSCO VF STEWART JAC
Citation: Yh. Wu et al., MICROWAVE PTSI-SI SCHOTTKY-BARRIER-DETECTOR DIODE FABRICATION USING AN IMPLANTED ACTIVE LAYER ON HIGH-RESISTIVITY SILICON SUBSTRATE, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 641-646
THE REALIZATION OF SILICON-ON-INSULATOR UTILIZING TRENCH-BEFORE-BOND AND POLISH STOP TECHNOLOGY
Authors: BAINE PT GAY DL ARMSTRONG BM GAMBLE HS
Citation: Pt. Baine et al., THE REALIZATION OF SILICON-ON-INSULATOR UTILIZING TRENCH-BEFORE-BOND AND POLISH STOP TECHNOLOGY, Journal of the Electrochemical Society, 145(5), 1998, pp. 1738-1743
MODE OF ATTACK OF ATOMIC CARBON ON BENZENE RINGS
Authors: ARMSTRONG BM ZHENG FM SHEVLIN PB
Citation: Bm. Armstrong et al., MODE OF ATTACK OF ATOMIC CARBON ON BENZENE RINGS, Journal of the American Chemical Society, 120(24), 1998, pp. 6007-6011
ELECTRICAL CHARACTERIZATION OF DIELECTRICALLY ISOLATED SILICON SUBSTRATES CONTAINING BURIED METALLIC LAYERS
Authors: GOH WL MONTGOMERY JH RAZA SH ARMSTRONG BM GAMBLE HS
Citation: Wl. Goh et al., ELECTRICAL CHARACTERIZATION OF DIELECTRICALLY ISOLATED SILICON SUBSTRATES CONTAINING BURIED METALLIC LAYERS, IEEE electron device letters, 18(5), 1997, pp. 232-234
DEPOSITION AND CHARACTERIZATION OF SILICON GROWN IN A SIF4 SIH4/H-2 MIXTURE FOR TFT APPLICATIONS/
Authors: QUINN LJ LEE B BAINE PT MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation: Lj. Quinn et al., DEPOSITION AND CHARACTERIZATION OF SILICON GROWN IN A SIF4 SIH4/H-2 MIXTURE FOR TFT APPLICATIONS/, Thin solid films, 296(1-2), 1997, pp. 7-10
SINGLE-CRYSTAL SILICON ON GLASS
Authors: BAINE PT QUINN LJ LEE B MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation: Pt. Baine et al., SINGLE-CRYSTAL SILICON ON GLASS, Thin solid films, 296(1-2), 1997, pp. 141-144
COMPARISON OF SI1-YCY FILMS PRODUCED BY SOLID-PHASE EPITAXY AND RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: RAY SK MCNEILL DW GAY DL MAITI CK ARMSTRONG GA ARMSTRONG BM GAMBLE HS
Citation: Sk. Ray et al., COMPARISON OF SI1-YCY FILMS PRODUCED BY SOLID-PHASE EPITAXY AND RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 149-152
PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION FOR THIN-FILM-TRANSISTOR APPLICATIONS
Authors: QUINN LJ MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation: Lj. Quinn et al., PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION FOR THIN-FILM-TRANSISTOR APPLICATIONS, Journal of non-crystalline solids, 187, 1995, pp. 347-352
A COMPUTATIONAL AND EXPERIMENTAL INVESTIGATION OF FREE TERT-BUTYLMETHYLENE, A CARBENE STABILIZED BY SIGMA-BOND PARTICIPATION
Authors: ARMSTRONG BM MCKEE ML SHEVLIN PB
Citation: Bm. Armstrong et al., A COMPUTATIONAL AND EXPERIMENTAL INVESTIGATION OF FREE TERT-BUTYLMETHYLENE, A CARBENE STABILIZED BY SIGMA-BOND PARTICIPATION, Journal of the American Chemical Society, 117(13), 1995, pp. 3685-3689
LARGE-AREA SHOWER IMPLANTER FOR THIN-FILM TRANSISTORS
Authors: WU Y MONTGOMERY JH REFSUM A MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation: Y. Wu et al., LARGE-AREA SHOWER IMPLANTER FOR THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 23-26
A RADIANT HEATED REACTOR WITH MULTISTEP PROCESS CAPABILITY
Authors: QUINN LJ WU Y MONTGOMERY JH MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation: Lj. Quinn et al., A RADIANT HEATED REACTOR WITH MULTISTEP PROCESS CAPABILITY, Microelectronic engineering, 25(2-4), 1994, pp. 147-152
THE STUDY OF SELECTIVITY IN SILICON SELECTIVE EPITAXIAL-GROWTH
Authors: YE L ARMSTRONG BM GAMBLE HS
Citation: L. Ye et al., THE STUDY OF SELECTIVITY IN SILICON SELECTIVE EPITAXIAL-GROWTH, Microelectronic engineering, 25(2-4), 1994, pp. 153-158
GROWTH OF BETA-SIC LAYERS BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: CHIEW SP MCBRIDE G ARMSTRONG BM GRIMSHAW J GAMBLE HS TROCHAGRIMSHAW J
Citation: Sp. Chiew et al., GROWTH OF BETA-SIC LAYERS BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Microelectronic engineering, 25(2-4), 1994, pp. 177-182
COMPARATIVE-STUDY OF LARGE GRAINS AND HIGH-PERFORMANCE TFTS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AND APCVD AMORPHOUS-SILICON FILMS
Authors: PANWAR OS MOORE RA RAZA SH GAMBLE HS ARMSTRONG BM
Citation: Os. Panwar et al., COMPARATIVE-STUDY OF LARGE GRAINS AND HIGH-PERFORMANCE TFTS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AND APCVD AMORPHOUS-SILICON FILMS, Thin solid films, 237(1-2), 1994, pp. 255-267
CARBON-ATOM ROUTES TO NITRENES
Authors: ARMSTRONG BM SHEVLIN PB
Citation: Bm. Armstrong et Pb. Shevlin, CARBON-ATOM ROUTES TO NITRENES, Journal of the American Chemical Society, 116(9), 1994, pp. 4071-4072
LOW-PRESSURE SILICON SELECTIVE EPITAXIAL-GROWTH AND ITS THERMODYNAMICCONSIDERATIONS
Authors: YE L ARMSTRONG BM GAMBLE HS
Citation: L. Ye et al., LOW-PRESSURE SILICON SELECTIVE EPITAXIAL-GROWTH AND ITS THERMODYNAMICCONSIDERATIONS, Journal de physique. IV, 3(C3), 1993, pp. 51-58
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