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Results: 1-25 | 26-35
Results: 1-25/35
EFFECT OF LATTICE STRUCTURE ON THE POSITRON-ANNIHILATION WITH INNER-SHELL ELECTRONS
Authors: ALATALO M ASOKAKUMAR P GHOSH VJ NIELSEN B LYNN KG KRUSEMAN AC VANVEEN A KORHONEN T PUSKA MJ
Citation: M. Alatalo et al., EFFECT OF LATTICE STRUCTURE ON THE POSITRON-ANNIHILATION WITH INNER-SHELL ELECTRONS, Journal of physics and chemistry of solids, 59(1), 1998, pp. 55-59
AN INVESTIGATION OF HYDROGENIZED AMORPHOUS SI STRUCTURES WITH DOPPLERBROADENING POSITRON-ANNIHILATION TECHNIQUES
Authors: PETKOV MP MAREK T ASOKAKUMAR P LYNN KG CRANDALL RS MAHAN AH
Citation: Mp. Petkov et al., AN INVESTIGATION OF HYDROGENIZED AMORPHOUS SI STRUCTURES WITH DOPPLERBROADENING POSITRON-ANNIHILATION TECHNIQUES, Applied physics letters, 73(1), 1998, pp. 99-101
STUDIES OF DEFECTS IN THE NEAR-SURFACE REGION AND AT INTERFACES USINGLOW-ENERGY POSITRON BEAMS
Authors: ASOKAKUMAR P
Citation: P. Asokakumar, STUDIES OF DEFECTS IN THE NEAR-SURFACE REGION AND AT INTERFACES USINGLOW-ENERGY POSITRON BEAMS, Bulletin of Materials Science, 20(4), 1997, pp. 391-399
THE MOMENTUM DISTRIBUTION OF ANNIHILATING POSITRON-ELECTRON PAIRS IN ALUMINUM
Authors: GHOSH VJ ALATALO M ASOKAKUMAR P LYNN KG KRUSEMAN AC
Citation: Vj. Ghosh et al., THE MOMENTUM DISTRIBUTION OF ANNIHILATING POSITRON-ELECTRON PAIRS IN ALUMINUM, Applied surface science, 116, 1997, pp. 278-282
GLASS-TRANSITION OF POLYSTYRENE NEAR-THE-SURFACE STUDIED BY SLOW-POSITRON-ANNIHILATION SPECTROSCOPY
Authors: JEAN YC ZHANG RW CAO H YUAN JP HUANG CM NIELSEN B ASOKAKUMAR P
Citation: Yc. Jean et al., GLASS-TRANSITION OF POLYSTYRENE NEAR-THE-SURFACE STUDIED BY SLOW-POSITRON-ANNIHILATION SPECTROSCOPY, Physical review. B, Condensed matter, 56(14), 1997, pp. 8459-8462
LOW-TEMPERATURE POSITRON TRANSPORT IN SEMIINSULATING GAAS
Authors: SHAN YY LYNN KG ASOKAKUMAR P FUNG S BELING CB
Citation: Yy. Shan et al., LOW-TEMPERATURE POSITRON TRANSPORT IN SEMIINSULATING GAAS, Physical review. B, Condensed matter, 55(15), 1997, pp. 9897-9903
MICROSCOPIC STRUCTURE OF DX CENTERS IN CD0.8ZN0.2TE-CL
Authors: SHAN YY LYNN KG SZELES C ASOKAKUMAR P THIO T BENNETT JW BELING CB FUNG S BECLA P
Citation: Yy. Shan et al., MICROSCOPIC STRUCTURE OF DX CENTERS IN CD0.8ZN0.2TE-CL, Physical review letters, 79(22), 1997, pp. 4473-4476
VISIBLE-LIGHT EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS
Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG DIMAURO LF BOTTANI CE CORNI F TONINI R OTTAVIANI GP
Citation: G. Ghislotti et al., VISIBLE-LIGHT EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS, Journal of the Electrochemical Society, 144(6), 1997, pp. 2196-2199
POSITRON-ANNIHILATION STUDIES OF SILICON-RICH SIO2 PRODUCED BY HIGH-DOSE ION-IMPLANTATION
Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG DIMAURO LF COMI F TONINI R
Citation: G. Ghislotti et al., POSITRON-ANNIHILATION STUDIES OF SILICON-RICH SIO2 PRODUCED BY HIGH-DOSE ION-IMPLANTATION, Applied physics letters, 70(4), 1997, pp. 496-498
ON THE ROLE OF CLASSICAL AND QUANTUM NOTIONS IN CHANNELING AND THE DEVELOPMENT OF FAST POSITRONS AS A SOLID-STATE PROBE OF VALENCE ELECTRONAND SPIN-DENSITIES
Authors: HAU LV GOLOVCHENKO JA HAAKENAASEN R HUNT AW PENG JP ASOKAKUMAR P LYNN KG WEINERT M PALATHINGAL JC
Citation: Lv. Hau et al., ON THE ROLE OF CLASSICAL AND QUANTUM NOTIONS IN CHANNELING AND THE DEVELOPMENT OF FAST POSITRONS AS A SOLID-STATE PROBE OF VALENCE ELECTRONAND SPIN-DENSITIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(1-2), 1996, pp. 30-41
DEFECT IDENTIFICATION USING THE CORE-ELECTRON CONTRIBUTION IN DOPPLER-BROADENING SPECTROSCOPY OF POSITRON-ANNIHILATION RADIATION
Authors: SZPALA S ASOKAKUMAR P NIELSEN B PENG JP HAYAKAWA S LYNN KG GOSSMANN HJ
Citation: S. Szpala et al., DEFECT IDENTIFICATION USING THE CORE-ELECTRON CONTRIBUTION IN DOPPLER-BROADENING SPECTROSCOPY OF POSITRON-ANNIHILATION RADIATION, Physical review. B, Condensed matter, 54(7), 1996, pp. 4722-4731
FIELD-EFFECT ON POSITRON DIFFUSION IN SEMIINSULATING GAAS
Authors: SHAN YY ASOKAKUMAR P LYNN KG FUNG S BELING CD
Citation: Yy. Shan et al., FIELD-EFFECT ON POSITRON DIFFUSION IN SEMIINSULATING GAAS, Physical review. B, Condensed matter, 54(3), 1996, pp. 1982-1986
CHARACTERIZATION OF SILICON-IMPLANTED SIO2 LAYERS USING POSITRON-ANNIHILATION SPECTROSCOPY
Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG SZELES C BOTTANI CE BERTONI S CEROFOLINI GF MEDA L
Citation: G. Ghislotti et al., CHARACTERIZATION OF SILICON-IMPLANTED SIO2 LAYERS USING POSITRON-ANNIHILATION SPECTROSCOPY, Thin solid films, 276(1-2), 1996, pp. 310-313
INCREASED ELEMENTAL SPECIFICITY OF POSITRON-ANNIHILATION SPECTRA
Authors: ASOKAKUMAR P ALATALO M GHOSH VJ KRUSEMAN AC NIELSEN B LYNN KG
Citation: P. Asokakumar et al., INCREASED ELEMENTAL SPECIFICITY OF POSITRON-ANNIHILATION SPECTRA, Physical review letters, 77(10), 1996, pp. 2097-2100
STUDY OF THE SIO2-SI INTERFACE USING VARIABLE-ENERGY POSITRON 2-DIMENSIONAL ANGULAR-CORRELATION OF ANNIHILATION RADIATION
Authors: PENG JP LYNN KG ASOKAKUMAR P BECKER DP HARSHMAN DR
Citation: Jp. Peng et al., STUDY OF THE SIO2-SI INTERFACE USING VARIABLE-ENERGY POSITRON 2-DIMENSIONAL ANGULAR-CORRELATION OF ANNIHILATION RADIATION, Physical review letters, 76(12), 1996, pp. 2157-2160
EFFECT OF DIFFERENT PREPARATION CONDITIONS ON LIGHT-EMISSION FROM SILICON IMPLANTED SIO2 LAYERS
Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG GAMBHIR A DIMAURO LF BOTTANI CE
Citation: G. Ghislotti et al., EFFECT OF DIFFERENT PREPARATION CONDITIONS ON LIGHT-EMISSION FROM SILICON IMPLANTED SIO2 LAYERS, Journal of applied physics, 79(11), 1996, pp. 8660-8663
DETECTION OF CURRENT-INDUCED VACANCIES IN THIN ALUMINUM-COPPER LINES USING POSITRONS
Authors: ASOKAKUMAR P OBRIEN K LYNN KG SIMPSON PJ RODBELL KP
Citation: P. Asokakumar et al., DETECTION OF CURRENT-INDUCED VACANCIES IN THIN ALUMINUM-COPPER LINES USING POSITRONS, Applied physics letters, 68(3), 1996, pp. 406-408
APPLICATIONS OF POSITRON-ANNIHILATION SPECTROSCOPY
Authors: ASOKAKUMAR P LYNN KG
Citation: P. Asokakumar et Kg. Lynn, APPLICATIONS OF POSITRON-ANNIHILATION SPECTROSCOPY, Journal de physique. IV, 5(C1), 1995, pp. 15-25
NUCLEAR-CHARGE AND POSITRON-ENERGY DEPENDENCE OF THE SINGLE-QUANTUM ANNIHILATION OF POSITRONS
Authors: PALATHINGAL JC ASOKAKUMAR P LYNN KG WU XY
Citation: Jc. Palathingal et al., NUCLEAR-CHARGE AND POSITRON-ENERGY DEPENDENCE OF THE SINGLE-QUANTUM ANNIHILATION OF POSITRONS, Physical review. A, 51(3), 1995, pp. 2122-2130
POSITRON-ANNIHILATION STUDIES OF DIAMOND-LIKE NANOCOMPOSITE FILMS
Authors: ASOKAKUMAR P DORFMAN BF ABRAIZOV MG YAN D POLLAK FH
Citation: P. Asokakumar et al., POSITRON-ANNIHILATION STUDIES OF DIAMOND-LIKE NANOCOMPOSITE FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1044-1047
POSITRON-ANNIHILATION STUDIES OF DEFECTS IN MOLECULAR-BEAM EPITAXY-GROWN III-V LAYERS
Authors: UMLOR MT ASOKAKUMAR P KEEBLE DJ COOKE PW LYNN KG
Citation: Mt. Umlor et al., POSITRON-ANNIHILATION STUDIES OF DEFECTS IN MOLECULAR-BEAM EPITAXY-GROWN III-V LAYERS, Applied surface science, 85(1-4), 1995, pp. 295-300
HYDROGEN-INDUCED BREAKDOWN OF LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF SI
Authors: ASOKAKUMAR P SZPALA S NIELSEN B SZELES C LYNN KG LANFORD WA SHEPARD CA GOSSMANN HJ
Citation: P. Asokakumar et al., HYDROGEN-INDUCED BREAKDOWN OF LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF SI, Physical review. B, Condensed matter, 51(7), 1995, pp. 4630-4632
QUANTUM CHANNELING EFFECTS FOR 1 MEV POSITRONS
Authors: HAAKENAASEN R HAU LV GOLOVCHENKO JA PALATHINGAL JC PENG JP ASOKAKUMAR P LYNN KG
Citation: R. Haakenaasen et al., QUANTUM CHANNELING EFFECTS FOR 1 MEV POSITRONS, Physical review letters, 75(8), 1995, pp. 1650-1653
COMPARISON OF POLYCRYSTALLINE CU(IN,GA)SE-2 DEVICE EFFICIENCY WITH JUNCTION DEPTH AND INTERFACIAL STRUCTURE
Authors: NELSON AJ GABOR AM CONTRERAS MA TUTTLE JR NOUFI R SOBOL PE ASOKAKUMAR P LYNN KG
Citation: Aj. Nelson et al., COMPARISON OF POLYCRYSTALLINE CU(IN,GA)SE-2 DEVICE EFFICIENCY WITH JUNCTION DEPTH AND INTERFACIAL STRUCTURE, Journal of applied physics, 78(1), 1995, pp. 269-272
DEFECT DISTRIBUTION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN SI SI(100), IMPROVED DEPTH PROFILING WITH MONOENERGETIC POSITRONS/
Authors: SZELES C ASOKAKUMAR P LYNN KG GOSSMANN HJ UNTERWALD FC BOONE T
Citation: C. Szeles et al., DEFECT DISTRIBUTION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN SI SI(100), IMPROVED DEPTH PROFILING WITH MONOENERGETIC POSITRONS/, Applied physics letters, 66(21), 1995, pp. 2855-2857
Risultati: 1-25 | 26-35