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Results: 1-20 |
Results: 20
PROCESS-INDUCED DEEP-LEVEL DEFECTS IN HIGH-PURITY SILICON
Authors: ASTROVA EV VORONKOV VB KOZLOV VA LEBEDEV AA
Citation: Ev. Astrova et al., PROCESS-INDUCED DEEP-LEVEL DEFECTS IN HIGH-PURITY SILICON, Semiconductor science and technology, 13(5), 1998, pp. 488-495
PHOTOSENSITIVITY OF POROUS SILICON-SILICON HETEROSTRUCTURES
Authors: ASTROVA EV LEBEDEV AA REMENYUK AD RUD YV RUD VY
Citation: Ev. Astrova et al., PHOTOSENSITIVITY OF POROUS SILICON-SILICON HETEROSTRUCTURES, Semiconductors, 31(2), 1997, pp. 121-123
STRUCTURE AND PROPERTIES OF POROUS SILICON OBTAINED BY PHOTOANODIZATION
Authors: ASTROVA EV RATNIKOV VV VITMAN RF LEBEDEV AA REMENYUK AD RUD YV
Citation: Ev. Astrova et al., STRUCTURE AND PROPERTIES OF POROUS SILICON OBTAINED BY PHOTOANODIZATION, Semiconductors, 31(10), 1997, pp. 1084-1090
EVIDENCE OF ANISOTROPIC STRUCTURES OF FREESTANDING POROUS SILICON FILMS
Authors: BRUSKA A ASTROVA EV FALKE U RASCHKE T RADEHAUS C HIETSCHOLD M
Citation: A. Bruska et al., EVIDENCE OF ANISOTROPIC STRUCTURES OF FREESTANDING POROUS SILICON FILMS, Thin solid films, 297(1-2), 1997, pp. 79-83
PHOTOSENSITIVITY OF SILICON-POROUS SILICON HETEROSTRUCTURES
Authors: ASTROVA EV LEBEDEV AA REMENYUK AD RUD VY RUD YV
Citation: Ev. Astrova et al., PHOTOSENSITIVITY OF SILICON-POROUS SILICON HETEROSTRUCTURES, Thin solid films, 297(1-2), 1997, pp. 129-131
EFFECT OF GAMMA-IRRADIATION ON THE PROPERTIES OF POROUS SILICON
Authors: ASTROVA EV VITMAN RF EMTSEV VV LEBEDEV AA POLOSKIN DS REMENYUK AD RUD YV
Citation: Ev. Astrova et al., EFFECT OF GAMMA-IRRADIATION ON THE PROPERTIES OF POROUS SILICON, Semiconductors, 30(3), 1996, pp. 279-282
THERMOSTIMULATED CAPACITY IN POROUS SI-BA SED DIODES
Authors: ASTROVA EV BELOV SV LEBEDEV AA
Citation: Ev. Astrova et al., THERMOSTIMULATED CAPACITY IN POROUS SI-BA SED DIODES, Fizika tverdogo tela, 38(3), 1996, pp. 702-710
ABSORPTION AND PHOTOLUMINESCENCE OF FREE POROUS SILICON
Authors: ASTROVA EV LEBEDEV AA REMENYUK AD RUD YV
Citation: Ev. Astrova et al., ABSORPTION AND PHOTOLUMINESCENCE OF FREE POROUS SILICON, Semiconductors, 29(9), 1995, pp. 858-861
DEGRADATION OF THE PHOTOLUMINESCENCE OF POROUS SILICON CAUSED BY CO-60 GAMMA-RADIATION
Authors: ASTROVA EV EMTSEV VV LEBEDEV AA POLOSKIN DI REMENYUK AD RUD YV KHARTSIEV VE
Citation: Ev. Astrova et al., DEGRADATION OF THE PHOTOLUMINESCENCE OF POROUS SILICON CAUSED BY CO-60 GAMMA-RADIATION, Semiconductors, 29(7), 1995, pp. 674-676
OPTICAL AND ELECTRICAL-PROPERTIES OF POROUS SILICON AND STAIN-ETCHED FILMS
Authors: ASTROVA EV BELOV SV LEBEDEV AA REMENJUK AD RUD YV
Citation: Ev. Astrova et al., OPTICAL AND ELECTRICAL-PROPERTIES OF POROUS SILICON AND STAIN-ETCHED FILMS, Thin solid films, 255(1-2), 1995, pp. 196-199
VAPOR-PHASE EPITAXIAL GROWN GAAS FILMS WITH A VERY-LOW DEEP-LEVEL CONCENTRATION
Authors: CHALDYSHEV VV ASTROVA EV LEBEDEV AA BOBROVNIKOVA IA CHERNOV NA IVLEVA OM LAVRENTIEVA LG TETERKINA IV VILISOVA MD
Citation: Vv. Chaldyshev et al., VAPOR-PHASE EPITAXIAL GROWN GAAS FILMS WITH A VERY-LOW DEEP-LEVEL CONCENTRATION, Journal of crystal growth, 146(1-4), 1995, pp. 246-250
PHOTOLUMINESCENCE SPECTRA OF GREEN POROUS SILICON
Authors: ASTROVA EV LEBEDEV AA REMENYUK FD RUD YV
Citation: Ev. Astrova et al., PHOTOLUMINESCENCE SPECTRA OF GREEN POROUS SILICON, JPN J A P 2, 34, 1994, pp. 251-253
PHOTOLUMINESCENCE OF SILICON-HYDROGEN FILMS
Authors: ASTROVA EV BELOV SV LEBEDEV AA REMENYUK AD RUD YV LOGINOV BB
Citation: Ev. Astrova et al., PHOTOLUMINESCENCE OF SILICON-HYDROGEN FILMS, Semiconductors, 28(3), 1994, pp. 299-301
OPTICAL AND ELECTRICAL-PROPERTIES OF POROUS SILICON
Authors: ASTROVA EV LEBEDEV AA REMENYUK AD RUD YV
Citation: Ev. Astrova et al., OPTICAL AND ELECTRICAL-PROPERTIES OF POROUS SILICON, Semiconductors, 28(3), 1994, pp. 302-304
CERTAIN PROPERTIES OF POROUS-SILICON-BASED STRUCTURES FABRICATED BY ACOLORING ETCHING METHOD
Authors: ASTROVA EV BELOV SV LEBEDEV AA
Citation: Ev. Astrova et al., CERTAIN PROPERTIES OF POROUS-SILICON-BASED STRUCTURES FABRICATED BY ACOLORING ETCHING METHOD, Semiconductors, 28(2), 1994, pp. 203-206
THIN STRUCTURE OF POROUS SI PHOTOLUMINESC ENCE SPECTRA
Authors: ASTROVA EV LEBEDEV AA REMENYUK AD RUD YV
Citation: Ev. Astrova et al., THIN STRUCTURE OF POROUS SI PHOTOLUMINESC ENCE SPECTRA, Pis'ma v Zurnal tehniceskoj fiziki, 20(15), 1994, pp. 33-39
TRANSFORM OF SPECTRA OF POROUS SILICON GR EEN PHOTOLUMINESCENCE
Authors: ASTROVA EV LEBEDEV AA REMENYUK AD RUD YV
Citation: Ev. Astrova et al., TRANSFORM OF SPECTRA OF POROUS SILICON GR EEN PHOTOLUMINESCENCE, Pis'ma v Zurnal tehniceskoj fiziki, 20(13), 1994, pp. 30-33
PHOTOLUMINESCENCE STUDIES OF POROUS SILICON AND SILICON-HYDROGEN FILMS
Authors: ASTROVA EV BELOV SV LEBEDEV AA REMENYUK AD RUD YV VITMAN RF KAPITONOVA LM
Citation: Ev. Astrova et al., PHOTOLUMINESCENCE STUDIES OF POROUS SILICON AND SILICON-HYDROGEN FILMS, Physica status solidi. a, Applied research, 145(2), 1994, pp. 407-413
PHOTOSENSITIVITY SPECTRA OF DIODE STRUCTU RES BASED ON POROUS SILICONAND SILICON-HYDROGEN FILMS
Authors: ASTROVA EV BELOV SV ZAITSEV OA LEBEDEV AA
Citation: Ev. Astrova et al., PHOTOSENSITIVITY SPECTRA OF DIODE STRUCTU RES BASED ON POROUS SILICONAND SILICON-HYDROGEN FILMS, Pis'ma v Zurnal tehniceskoj fiziki, 19(24), 1993, pp. 50-53
EFFECT OF CHEMICAL SURFACE-TREATMENT ON P-LAYER FORMATION IN THE INTERFACE REGION OF DIRECTLY BONDED SI WAFERS
Authors: ASTROVA EV GREKHOV IV KOZLOV VA KROPOTOV GI LEBEDEV AA PATSEKIN AV VORONKOV VB
Citation: Ev. Astrova et al., EFFECT OF CHEMICAL SURFACE-TREATMENT ON P-LAYER FORMATION IN THE INTERFACE REGION OF DIRECTLY BONDED SI WAFERS, Semiconductor science and technology, 8(9), 1993, pp. 1700-1705
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