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Results: 1-25 | 26-44 |
Results: 26-44/44
THE ROLE OF RU IN IMPROVING SCHOTTKY AND OHMIC CONTACTS TO INP
Authors: BARNARD WO MYBURG G AURET FD POTGIETER JH RESSEL P KUPHAL E
Citation: Wo. Barnard et al., THE ROLE OF RU IN IMPROVING SCHOTTKY AND OHMIC CONTACTS TO INP, Vacuum, 46(8-10), 1995, pp. 893-897
ELECTRICAL CHARACTERIZATION OF SPUTTER-DEPOSITION-INDUCED DEFECTS IN EPITAXIALLY GROWN N-GAAS LAYERS
Authors: AURET FD GOODMAN SA MYBURG G BARNARD WO
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF SPUTTER-DEPOSITION-INDUCED DEFECTS IN EPITAXIALLY GROWN N-GAAS LAYERS, Vacuum, 46(8-10), 1995, pp. 1087-1090
NEW ELECTRON-IRRADIATION-INDUCED ELECTRON TRAP IN EPITAXIALLY GROWN SI-DOPED N-GAAS
Authors: AURET FD GOODMAN SA MEYER WE
Citation: Fd. Auret et al., NEW ELECTRON-IRRADIATION-INDUCED ELECTRON TRAP IN EPITAXIALLY GROWN SI-DOPED N-GAAS, Applied physics letters, 67(22), 1995, pp. 3277-3279
NEUTRON-IRRADIATION INDUCED DEFECTS IN LOW FREE-CARRIER CONCENTRATIONEPITAXIALLY GROWN N-GAAS
Authors: AURET FD GOODMAN SA WILSON A MYBURG G
Citation: Fd. Auret et al., NEUTRON-IRRADIATION INDUCED DEFECTS IN LOW FREE-CARRIER CONCENTRATIONEPITAXIALLY GROWN N-GAAS, JPN J A P 1, 33(5A), 1994, pp. 2633-2634
ELECTRIC-FIELD EFFECT ON THE EMISSION OF ELECTRON-IRRADIATION-INDUCEDDEFECTS IN N-GAAS
Authors: GOODMAN SA AURET FD MEYER WE
Citation: Sa. Goodman et al., ELECTRIC-FIELD EFFECT ON THE EMISSION OF ELECTRON-IRRADIATION-INDUCEDDEFECTS IN N-GAAS, JPN J A P 1, 33(4A), 1994, pp. 1949-1953
A METASTABLE ALPHA-PARTICLE IRRADIATION-INDUCED DEFECT IN N-GAAS
Authors: AURET FD ERASMUS RM GOODMAN SA
Citation: Fd. Auret et al., A METASTABLE ALPHA-PARTICLE IRRADIATION-INDUCED DEFECT IN N-GAAS, JPN J A P 2, 33(4A), 1994, pp. 120000491-120000493
DEFECT ANNEALING OF ALPHA-PARTICLE IRRADIATED N-GAAS
Authors: GOODMAN SA AURET FD MYBURG G
Citation: Sa. Goodman et al., DEFECT ANNEALING OF ALPHA-PARTICLE IRRADIATED N-GAAS, Applied physics. A, Solids and surfaces, 59(3), 1994, pp. 305-310
THE EFFECT OF ALPHA-PARTICLE AND PROTON IRRADIATION ON THE ELECTRICALAND DEFECT PROPERTIES OF N-GAAS
Authors: GOODMAN SA AURET FD MEYER WE
Citation: Sa. Goodman et al., THE EFFECT OF ALPHA-PARTICLE AND PROTON IRRADIATION ON THE ELECTRICALAND DEFECT PROPERTIES OF N-GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 349-353
ELECTRICAL CHARACTERISTICS OF NEUTRON-IRRADIATION INDUCED DEFECTS IN N-GAAS
Authors: AURET FD WILSON A GOODMAN SA MYBURG G MEYER WE
Citation: Fd. Auret et al., ELECTRICAL CHARACTERISTICS OF NEUTRON-IRRADIATION INDUCED DEFECTS IN N-GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 387-391
FERMI-LEVEL PINNING BY VARIOUS METAL SCHOTTKY CONTACTS ON (100)-OMVPE-GROWN N-GAAS
Authors: MYBURG G AURET FD MEYER WE BURGER H
Citation: G. Myburg et al., FERMI-LEVEL PINNING BY VARIOUS METAL SCHOTTKY CONTACTS ON (100)-OMVPE-GROWN N-GAAS, Thin solid films, 249(1), 1994, pp. 95-99
HOLE DEFECTS IN MOLECULAR-BEAM EPITAXIALLY GROWN P-GAAS INTRODUCED BYALPHA-IRRADIATION
Authors: GOODMAN SA AURET FD MEYER WE
Citation: Sa. Goodman et al., HOLE DEFECTS IN MOLECULAR-BEAM EPITAXIALLY GROWN P-GAAS INTRODUCED BYALPHA-IRRADIATION, Journal of applied physics, 75(2), 1994, pp. 1222-1224
DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INTRODUCED IN N-GAAS AFTER ALPHA-IRRADIATION AT 15-K
Authors: GOODMAN SA AURET FD
Citation: Sa. Goodman et Fd. Auret, DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF DEFECTS INTRODUCED IN N-GAAS AFTER ALPHA-IRRADIATION AT 15-K, JPN J A P 2, 32(8B), 1993, pp. 120001120-120001122
DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF ELECTRON-IRRADIATION-INDUCED HOLE TRAPS IN P-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: AURET FD GOODMAN SA MEYER WE ERASMUS RM MYBURG G
Citation: Fd. Auret et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF ELECTRON-IRRADIATION-INDUCED HOLE TRAPS IN P-GAAS GROWN BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 32(7B), 1993, pp. 120000974-120000977
ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN N-GAAS BY ALPHA-IRRADIATION AND BETA-IRRADIATION FROM RADIONUCLIDES
Authors: AURET FD GOODMAN SA MYBURG G MEYER WE
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN N-GAAS BY ALPHA-IRRADIATION AND BETA-IRRADIATION FROM RADIONUCLIDES, Applied physics. A, Solids and surfaces, 56(6), 1993, pp. 547-553
RUTHENIUM AND RUTHENIUM-BASED CONTACTS TO GAAS
Authors: MYBURG G BARNARD WO MEYER WE LOUW CW VANDENBERG NG HAYES M AURET FD GOODMAN SA
Citation: G. Myburg et al., RUTHENIUM AND RUTHENIUM-BASED CONTACTS TO GAAS, Applied surface science, 70-1, 1993, pp. 511-514
ALTERNATIVE OHMIC CONTACT SYSTEMS TO N-INP
Authors: BARNARD WO MYBURG G AURET FD MALHERBE JB LOUW CW
Citation: Wo. Barnard et al., ALTERNATIVE OHMIC CONTACT SYSTEMS TO N-INP, Applied surface science, 70-1, 1993, pp. 515-519
EFFECT OF ELECTRON-BEAM DEPOSITION RATE ON THE ELECTRICAL-PROPERTIES OF TI N-GAAS AND PT/N-GAAS CONTACTS/
Authors: AURET FD BARNARD WO MEYER WE MYBURG G
Citation: Fd. Auret et al., EFFECT OF ELECTRON-BEAM DEPOSITION RATE ON THE ELECTRICAL-PROPERTIES OF TI N-GAAS AND PT/N-GAAS CONTACTS/, Thin solid films, 235(1-2), 1993, pp. 163-168
ELECTRICAL AND DEFECT CHARACTERIZATION OF N-TYPE GAAS IRRADIATED WITHALPHA-PARTICLES USING A VANDEGRAAFF ACCELERATOR AND AN AM-241 RADIO-NUCLIDE SOURCE
Authors: GOODMAN SA AURET FD HAYES M MYBURG G MEYER WE
Citation: Sa. Goodman et al., ELECTRICAL AND DEFECT CHARACTERIZATION OF N-TYPE GAAS IRRADIATED WITHALPHA-PARTICLES USING A VANDEGRAAFF ACCELERATOR AND AN AM-241 RADIO-NUCLIDE SOURCE, Physica status solidi. a, Applied research, 140(2), 1993, pp. 381-390
ELECTRICAL CHARACTERIZATION OF NEUTRON-IRRADIATION INDUCED DEFECTS INUNDOPED EPITAXIALLY GROWN N-GAAS
Authors: AURET FD GOODMAN SA MYBURG G BARNARD WO JONES DTL
Citation: Fd. Auret et al., ELECTRICAL CHARACTERIZATION OF NEUTRON-IRRADIATION INDUCED DEFECTS INUNDOPED EPITAXIALLY GROWN N-GAAS, Journal of applied physics, 74(7), 1993, pp. 4339-4342
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