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Results: 1-25 | 26-37 |
Results: 26-37/37
EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES
Authors: SEIGNEUR F AUTRAN JL PLOSSU C BALLAND B BADOT D STRABONI A
Citation: F. Seigneur et al., EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES, Microelectronic engineering, 28(1-4), 1995, pp. 345-348
3-LEVEL CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE IN SUBMICROMETER MOS-TRANSISTORS
Authors: AUTRAN JL BALLAND B BABOT D
Citation: Jl. Autran et al., 3-LEVEL CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE IN SUBMICROMETER MOS-TRANSISTORS, Journal of non-crystalline solids, 187, 1995, pp. 211-215
A COMPARISON OF SI-SIO2 INTERFACE-TRAP PROPERTIES IN THIN-FILM TRANSISTORS WITH THERMAL AND PLASMA-NITRIDED OXIDES
Authors: AUTRAN JL PLOSSU C SEIGNEUR F BALLAND B STRABONI A
Citation: Jl. Autran et al., A COMPARISON OF SI-SIO2 INTERFACE-TRAP PROPERTIES IN THIN-FILM TRANSISTORS WITH THERMAL AND PLASMA-NITRIDED OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 374-379
TRAPPING DETRAPPING PROPERTIES OF IRRADIATED ULTRA-THIN SIMOX BURIED OXIDES
Authors: PAILLET P AUTRAN JL LERAY JL ASPAR B AUBERTONHERVE AJ
Citation: P. Paillet et al., TRAPPING DETRAPPING PROPERTIES OF IRRADIATED ULTRA-THIN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2108-2113
IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N JAUSSAUD C
Citation: C. Raynaud et al., IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/, Journal of the Electrochemical Society, 142(1), 1995, pp. 282-285
COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N BILLON T JAUSSAUD C
Citation: C. Raynaud et al., COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES, Applied physics letters, 66(18), 1995, pp. 2340-2342
CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE
Authors: AUTRAN JL BALLAND B VALLARD JP BABOT D
Citation: Jl. Autran et al., CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE, Journal de physique. III, 4(9), 1994, pp. 1707-1721
USE OF THE CHARGE-PUMPING TECHNIQUE TO UNDERSTAND NONUNIFORM N-CHANNEL MOSFET DEGRADATION
Authors: DJAHLI F AUTRAN JL PLOSSU C
Citation: F. Djahli et al., USE OF THE CHARGE-PUMPING TECHNIQUE TO UNDERSTAND NONUNIFORM N-CHANNEL MOSFET DEGRADATION, Materials science & engineering. B, Solid-state materials for advanced technology, 23(2), 1994, pp. 120-122
A NEW 3RD-LEVEL CHARGE-PUMPING METHOD FOR ACCURATE DETERMINATION OF INTERFACE-TRAP PARAMETERS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS
Authors: AUTRAN JL BALLAND B
Citation: Jl. Autran et B. Balland, A NEW 3RD-LEVEL CHARGE-PUMPING METHOD FOR ACCURATE DETERMINATION OF INTERFACE-TRAP PARAMETERS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS, Review of scientific instruments, 65(6), 1994, pp. 2141-2142
ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: RAYNAUD C AUTRAN JL BALLAND B GUILLOT G JAUSSAUD C BILLON T
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(2), 1994, pp. 993-997
CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES
Authors: AUTRAN JL SEIGNEUR F DELMAS J PLOSSU C BALLAND B
Citation: Jl. Autran et al., CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES, Journal de physique. III, 3(10), 1993, pp. 1947-1961
CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES
Authors: AUTRAN JL SEIGNEUR F PLOSSU C BALLAND B
Citation: Jl. Autran et al., CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES, Journal of applied physics, 74(6), 1993, pp. 3932-3935
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