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Results:
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Results: 25
Authors:
Adams, AR
Citation: Ar. Adams, Semiconductor light sources for mid-infrared applications - Preface, PHI T ROY A, 359(1780), 2001, pp. 457-458
Authors:
Smith, D
Murdin, BN
Sirtori, C
Skolnick, M
Flatte, ME
O'Reilly, E
Adams, AR
Citation: D. Smith et al., Key issues for mid-infrared emission - Discussion, PHI T ROY A, 359(1780), 2001, pp. 472-473
Authors:
Meyer, JR
Tacke, M
Adams, AR
Citation: Jr. Meyer et al., Lead-salt lasers - Discussion, PHI T ROY A, 359(1780), 2001, pp. 566-566
Authors:
Sweeney, SJ
Knowles, G
Sale, TE
Adams, AR
Citation: Sj. Sweeney et al., Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures, PHYS ST S-B, 223(2), 2001, pp. 567-572
Authors:
Sweeney, SJ
Higashi, T
Andreev, A
Adams, AR
Uchida, T
Fujii, T
Citation: Sj. Sweeney et al., Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature, PHYS ST S-B, 223(2), 2001, pp. 573-579
Authors:
Knowles, G
Sweeney, SJ
Sale, TE
Adams, AR
Citation: G. Knowles et al., Assessing the performance of visible (665 nm) vertical cavity surface emitting lasers using high pressure and low temperature techniques, PHYS ST S-B, 223(2), 2001, pp. 581-585
Authors:
Sale, TE
Sweeney, SJ
Knowles, G
Adams, AR
Citation: Te. Sale et al., Gain-cavity alignment in efficient visible (660 nm) VCSELs studied using high pressure techniques, PHYS ST S-B, 223(2), 2001, pp. 587-591
Authors:
Choulis, SA
Weinstein, BA
Hosea, TJC
Kamal-Saadi, M
O'Reilly, EP
Adams, AR
Stolz, W
Citation: Sa. Choulis et al., Effects of confinement on the coupling between nitrogen and band states inInGaAs1-xNx/GaAs (x <= 0.025) structures: Pressure and temperature studies, PHYS ST S-B, 223(1), 2001, pp. 151-156
Authors:
Fehse, R
Sweeney, SJ
Adams, AR
O'Reilly, EP
Egorov, AY
Riechert, H
Illek, S
Citation: R. Fehse et al., Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure, ELECTR LETT, 37(2), 2001, pp. 92-93
Authors:
Andreev, AD
O'Reilly, EP
Adams, AR
Ashley, T
Citation: Ad. Andreev et al., Theoretical performance and structure optimization of 3.5-4.5 mu m InGaSb/InGaAlSb multiple-quantum-well lasers, APPL PHYS L, 78(18), 2001, pp. 2640-2642
Authors:
Murdin, BN
Kamal-Saadi, M
Lindsay, A
O'Reilly, EP
Adams, AR
Nott, GJ
Crowder, JG
Pidgeon, CR
Bradley, IV
Wells, JPR
Burke, T
Johnson, AD
Ashley, T
Citation: Bn. Murdin et al., Auger recombination in long-wavelength infrared InNxSb1-x alloys, APPL PHYS L, 78(11), 2001, pp. 1568-1570
Authors:
Onischenko, AI
Sale, TE
O'Reilly, EP
Adams, AR
Pinches, SM
Frost, JEF
Woodhead, J
Citation: Ai. Onischenko et al., Progress in the design and development of AlGalnP visible VCSELs, IEE P-OPTO, 147(1), 2000, pp. 15-21
Authors:
Hochheimer, HD
Widulle, F
Held, JT
Strehl, G
Kotitschke, RT
Adams, AR
Citation: Hd. Hochheimer et al., Study of semiconductor lasers under simultaneous uniaxial stress and hydrostatic pressure, HIGH PR RES, 18(1-6), 2000, pp. 41-48
Authors:
Sweeney, SJ
Higashi, T
Adams, AR
Uchida, T
Fujii, T
Citation: Sj. Sweeney et al., A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure, HIGH PR RES, 18(1-6), 2000, pp. 49-55
Authors:
Silver, M
Phillips, AF
Adams, AR
Greene, PD
Collar, AJ
Citation: M. Silver et al., Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells, IEEE J Q EL, 36(1), 2000, pp. 118-122
Authors:
Phillips, AF
Sweeney, SJ
Adams, AR
Thijs, PJA
Citation: Af. Phillips et al., The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers, IEEE S T QU, 5(3), 1999, pp. 401-412
Authors:
Higashi, T
Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Uchida, T
Fujii, T
Citation: T. Higashi et al., Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers, IEEE S T QU, 5(3), 1999, pp. 413-419
Authors:
Higashi, T
Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Uchida, T
Fujii, T
Citation: T. Higashi et al., Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers, IEEE PHOTON, 11(4), 1999, pp. 409-411
Authors:
Vicente, PMA
Thomas, PJS
Lancefield, D
Sale, TE
Hosea, TJC
Adams, AR
Klar, PJ
Raymond, A
Citation: Pma. Vicente et al., Quantum-well and cavity-mode resonance effects in a vertical-cavity surface-emitting laser structure, observed by photoreflectance using hydrostatic pressure and temperature tuning, PHYS ST S-B, 211(1), 1999, pp. 255-262
Authors:
Allam, J
Adams, AR
Citation: J. Allam et Ar. Adams, High pressure measurements and the "universal" scaling of impact ionization with bandstructure, PHYS ST S-B, 211(1), 1999, pp. 335-344
Authors:
Phillips, AF
Sweeney, SJ
Adams, AR
Thijs, PJA
Citation: Af. Phillips et al., The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers, PHYS ST S-B, 211(1), 1999, pp. 513-518
Authors:
Sweeney, SJ
Adams, AR
Silver, M
O'Reilly, EP
Watling, JR
Walker, AB
Thijs, PJA
Citation: Sj. Sweeney et al., Dependence of threshold current on QW position and on pressure in 1.5 mu mInGaAs(P) lasers, PHYS ST S-B, 211(1), 1999, pp. 525-531
Authors:
Page, H
Meney, AT
Adams, AR
van der Poel, CJ
Citation: H. Page et al., Carrier leakage effects in GaAsP/AlGaAs single-quantum-well lasers determined by hydrostatic pressure measurements, PHYS ST S-B, 211(1), 1999, pp. 533-538
Authors:
Kotitschke, RT
Hollingworth, AR
O'Reilly, EP
Adams, AR
Murdin, BN
Elliott, CT
Langerak, CJGM
Findlay, P
Pidgeon, CR
Ashley, T
Pryce, G
Citation: Rt. Kotitschke et al., Influence of Auger and LO-phonon scattering on bulk and 'quasi'-quantum wire mid-IR laser diodes, IEE P-OPTO, 145(5), 1998, pp. 281-286
Authors:
Adams, AR
Silver, M
Allam, J
Citation: Ar. Adams et al., Semiconductor optoelectronic devices, SEM SEMIMET, 55, 1998, pp. 301-352
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