AAAAAA
Results: 1-25/90
Authors:
Mouillet, R
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: R. Mouillet et al., Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistorgrown on low-temperature AlN interlayer, JPN J A P 2, 40(5B), 2001, pp. L498-L501
Authors:
Kosaki, M
Mochizuki, S
Nakamura, T
Yukawa, Y
Nitta, S
Yamaguchi, S
Amano, H
Akasaki, I
Citation: M. Kosaki et al., Metalorganic vapor phase epitaxial growth of high-quality AlInN/AlGaN multiple layers on GaN, JPN J A P 2, 40(5A), 2001, pp. L420-L422
Authors:
Terao, S
Iwaya, M
Nakamura, R
Kamiyama, S
Amano, H
Akasaki, I
Citation: S. Terao et al., Fracture of AlxGa1-xN/GaN heterostructure - Compositional and impurity dependence, JPN J A P 2, 40(3A), 2001, pp. L195-L197
Authors:
Detchprohm, T
Yano, M
Sano, S
Nakamura, R
Mochiduki, S
Nakamura, T
Amano, H
Akasaki, I
Citation: T. Detchprohm et al., Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: A new approach for growing low-dislocation-density GaN single crystals, JPN J A P 2, 40(1AB), 2001, pp. L16-L19
Authors:
Amano, H
Akasaki, I
Citation: H. Amano et I. Akasaki, Novel aspects of the growth of nitrides by MOVPE, J PHYS-COND, 13(32), 2001, pp. 6935-6944
Authors:
Pozina, G
Bergman, JP
Monemar, B
Yamaguchi, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant, MAT SCI E B, 82(1-3), 2001, pp. 137-139
Authors:
Wetzel, C
Amano, T
Akasaki, I
Ager, JW
Grzegory, I
Meyer, BK
Citation: C. Wetzel et al., DX-like behavior of oxygen in GaN, PHYSICA B, 302, 2001, pp. 23-38
Authors:
Monemar, B
Paskov, PP
Pozina, G
Paskova, T
Bergman, JP
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Authors:
Yamaguchi, S
Kariya, M
Kashima, T
Nitta, S
Kosaki, M
Yukawa, Y
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Control of strain in GaN using an In doping-induced hardening effect - art. no. 035318, PHYS REV B, 6403(3), 2001, pp. 5318
Authors:
Wetzel, C
Kasumi, M
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells, PHYS ST S-A, 183(1), 2001, pp. 51-60
Authors:
Pozina, G
Bergman, JP
Monemar, B
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport, J CRYST GR, 230(3-4), 2001, pp. 473-476
Authors:
Kamiyama, S
Iwaya, M
Hayashi, N
Takeuchi, T
Amano, H
Akasaki, I
Watanabe, S
Kaneko, Y
Yamada, N
Citation: S. Kamiyama et al., Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure, J CRYST GR, 223(1-2), 2001, pp. 83-91
Authors:
Yamaguchi, S
Kariya, M
Kosaki, M
Yukawa, Y
Nitta, S
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Control of strain in GaN by a combination of H-2 and N-2 carrier gases, J APPL PHYS, 89(12), 2001, pp. 7820-7824
Authors:
Yamaguchi, S
Kosaki, M
Watanabe, Y
Yukawa, Y
Nitta, S
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices, APPL PHYS L, 79(19), 2001, pp. 3062-3064
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., The effect of isoelectronic in-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy, JPN J A P 1, 39(4B), 2000, pp. 2385-2388
Authors:
Wetzel, C
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design, JPN J A P 1, 39(4B), 2000, pp. 2425-2427
Authors:
Kamiyama, S
Iwaya, M
Amano, H
Akasaki, I
Citation: S. Kamiyama et al., Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer, JPN J A P 1, 39(2A), 2000, pp. 390-392
Authors:
Takeuchi, T
Amano, H
Akasaki, I
Citation: T. Takeuchi et al., Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells, JPN J A P 1, 39(2A), 2000, pp. 413-416
Authors:
Hayashi, N
Kamiyama, S
Takeuchi, T
Iwaya, M
Amano, H
Akasaki, I
Watanabe, S
Kaneko, Y
Yamada, N
Citation: N. Hayashi et al., Electrical conductivity of low-temperature-deposited Al0.1Ga0.9N interlayer, JPN J A P 1, 39(12A), 2000, pp. 6493-6495
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes, JPN J A P 2, 39(5A), 2000, pp. L387-L389
Authors:
Kariya, M
Nitta, S
Kosaki, M
Yukawa, Y
Yamaguchi, S
Amano, H
Akasaki, I
Citation: M. Kariya et al., Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N quantum wells by isoelectronic In-doping during metalorganic vapor phase epitaxy, JPN J A P 2, 39(2B), 2000, pp. L143-L145
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures, PHYS REV B, 61(3), 2000, pp. 2159-2163
Authors:
Wetzel, C
Amano, H
Akasaki, I
Ager, JW
Grzegory, I
Topf, M
Meyer, BK
Citation: C. Wetzel et al., Localized vibrational modes in GaN : O tracing the formation of oxygen DX-like centers under hydrostatic pressure, PHYS REV B, 61(12), 2000, pp. 8202-8206
Authors:
Iwaya, M
Terao, S
Hayashi, N
Kashima, T
Detchprohm, T
Amano, H
Akasaki, I
Hirano, A
Pernot, C
Citation: M. Iwaya et al., High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector, MRS I J N S, 5, 2000, pp. NIL_40-NIL_45
Authors:
Miyake, H
Yamaguchi, M
Haino, M
Motogaito, A
Hiramatsu, K
Nambu, S
Kawaguchi, Y
Sawaki, N
Iyechika, Y
Maeda, T
Akasaki, I
Citation: H. Miyake et al., Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE, MRS I J N S, 5, 2000, pp. NIL_58-NIL_63