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The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture)
Authors: Alferov, ZI
Citation: Zi. Alferov, The double heterostructure: The concept and its applications in physics, electronics, and technology (Nobel lecture), CHEMPHYSCHE, 2(8-9), 2001, pp. 500
Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates
Authors: Maleev, NA Egorov, AY Zhukov, AE Kovsh, AR Vasil'ev, AP Ustinov, VM Ledentsov, NN Alferov, ZI
Citation: Na. Maleev et al., Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates, SEMICONDUCT, 35(7), 2001, pp. 847-853
1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them
Authors: Sakharov, AV Krestnikov, IL Maleev, NA Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Ledentsov, NN Bimberg, D Lott, JA Alferov, ZI
Citation: Av. Sakharov et al., 1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them, SEMICONDUCT, 35(7), 2001, pp. 854-859
In memory of Aleksei Petrovich Shotov (1927-2001)
Authors: Alferov, ZI Bagaev, VS Volkov, BA Gippius, AA Golovashkin, AI Grishechkina, SP Demeshina, AI Zasavitskii, II Isakov, AI Keldysh, LV Kopaev, YV Kopylovskii, BD Krokhin, ON Nadezhdinskii, AI Neizvestnyi, IG Penin, NA Popov, YM Sibel'din, NN Stafeev, VI Chuenkov, VA Shestakov, VV Yunovich, AE
Citation: Zi. Alferov et al., In memory of Aleksei Petrovich Shotov (1927-2001), SEMICONDUCT, 35(11), 2001, pp. 1345-1346
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Denisov, DV Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Heitz, R Bimberg, D Zakharov, ND Werner, P Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Novel infrared quantum dot lasers: Theory and reality
Authors: Bimberg, D Grundmann, M Ledentsov, NN Mao, MH Ribbat, C Sellin, R Ustinov, VM Zhukov, AE Alferov, ZI Lott, JA
Citation: D. Bimberg et al., Novel infrared quantum dot lasers: Theory and reality, PHYS ST S-B, 224(3), 2001, pp. 787-796
InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range
Authors: Maleev, NA Krestnikov, IL Kovsh, AR Sakharov, AV Zhukov, AE Ustinov, VM Mikhrin, SS Passenberg, W Pawlowski, E Moller, C Tsatsulnikov, AF Kunzel, H Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Large spectral splitting of TE and TM components of QDs in a microcavity
Authors: Maximov, MV Krestnikov, IL Makarov, AG Zhukov, AE Maleev, NA Ustinov, VM Tsatsulnikov, AF Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Torres, CMS
Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814
Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
Authors: Weber, A Goede, K Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Ledentsov, NN Kopev, PS Alferov, ZI
Citation: A. Weber et al., Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 833-837
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
Authors: Ledentsov, NN Litvinov, D Rosenauer, A Gerthsen, D Soshnikov, IP Shchukin, VA Ustinov, VM Egorov, AY Zukov, AE Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BP Bimberg, D Alferov, ZI
Citation: Nn. Ledentsov et al., Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces, J ELEC MAT, 30(5), 2001, pp. 463-470
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
Authors: Ledentsov, NN Shchukin, VA Bimberg, D Ustinov, VM Cherkashin, NA Musikhin, YG Volovik, BV Cirlin, GE Alferov, ZI
Citation: Nn. Ledentsov et al., Reversibility of the island shape, volume and density in Stranski-Krastanow growth, SEMIC SCI T, 16(6), 2001, pp. 502-506
1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
Authors: Krestnikov, IL Maleev, NA Sakharov, AV Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Lott, JA
Citation: Il. Krestnikov et al., 1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices, SEMIC SCI T, 16(10), 2001, pp. 844-848
Yurii Andreevich Osip'yan (on his seventieth birthday)
Authors: Alferov, ZI Andreev, AF Boyarchuk, AA Gantmakher, VF Zakharov, VE Kukushkin, IV Prokhorov, AM Rumyantsev, AY Timofeev, VB Khalatnikov, IM Chernoplekov, NA Eliashberg, GM
Citation: Zi. Alferov et al., Yurii Andreevich Osip'yan (on his seventieth birthday), USP FIZ NAU, 171(2), 2001, pp. 229-230
Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology
Authors: Alferov, ZI
Citation: Zi. Alferov, Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology, REV M PHYS, 73(3), 2001, pp. 767-782
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Authors: Maleev, NA Sakharov, AV Moeller, C Krestnikov, IL Kovsh, AR Mikhrin, SS Zhukov, AE Ustinov, VM Passenberg, W Pawlowski, E Kunezel, H Tsatsul'nikov, AF Ledentsov, NN Bimberg, D Alferov, ZI
Citation: Na. Maleev et al., 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots, J CRYST GR, 227, 2001, pp. 1146-1150
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Authors: Ustinov, VM Zhukov, AE Maleev, NA Kovsh, AR Mikhrin, SS Volovik, BV Musikhin, YG Shernyakov, YM Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1155-1161
Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
Authors: Maximov, MV Asryan, LV Shernyakov, YM Tsatsul'nikov, AF Kaiander, IN Nikolaev, VV Kovsh, AR Mikhrin, SS Ustinov, VM Zhukov, AE Alferov, ZI Ledenstov, NN Bimberg, D
Citation: Mv. Maximov et al., Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation, IEEE J Q EL, 37(5), 2001, pp. 676-683
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-mu m-wavelength at room temperature
Authors: Borri, P Schneider, S Langbein, W Woggon, U Zhukov, AE Ustinov, VM Ledentsov, NN Alferov, ZI Ouyang, D Bimberg, D
Citation: P. Borri et al., Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-mu m-wavelength at room temperature, APPL PHYS L, 79(16), 2001, pp. 2633-2635
Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications
Authors: Grundmann, M Heinrichsdorff, F Ledentsov, NN Ribbat, C Bimberg, D Zhukov, AE Kovsh, AR Maximov, MV Shernyakov, YM Lifshits, DA Ustinov, VM Alferov, ZI
Citation: M. Grundmann et al., Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications, JPN J A P 1, 39(4B), 2000, pp. 2341-2343
Quantum-dot heterostructure lasers
Authors: Ledentsov, NN Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Maximov, MV Alferov, ZI Lott, JA
Citation: Nn. Ledentsov et al., Quantum-dot heterostructure lasers, IEEE S T QU, 6(3), 2000, pp. 439-451
Study of multilayer structures with InAs nanoobjects in a silicon matrix
Authors: Petrov, VN Polyakov, NK Egorov, VA Cirlin, GE Zakharov, ND Werner, P Ustinov, VM Denisov, DV Ledentsov, NN Alferov, ZI
Citation: Vn. Petrov et al., Study of multilayer structures with InAs nanoobjects in a silicon matrix, SEMICONDUCT, 34(7), 2000, pp. 810-814
Properties of wide-mesastripe InGaAsP/InP lasers
Authors: Golikova, EG Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Skrynnikov, GA Tarasov, IS Alferov, ZI
Citation: Eg. Golikova et al., Properties of wide-mesastripe InGaAsP/InP lasers, SEMICONDUCT, 34(7), 2000, pp. 853-856
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range
Authors: Maleev, NA Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Bedarev, DA Volovik, BV Krestnikov, IL Kayander, IN Odnoblyudov, VA Suvorova, AA Tsatsul'nikov, AF Shernyakov, YM Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range, SEMICONDUCT, 34(5), 2000, pp. 594-597
Power conversion efficiency of quantum dot laser diodes
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Odnoblyudov, VA Ustinov, VM Shernyakov, YM Kondrat'eva, EY Livshits, DA Tarasov, IS Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Power conversion efficiency of quantum dot laser diodes, SEMICONDUCT, 34(5), 2000, pp. 609-613
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