AAAAAA
Results: 76-100/168
Authors:
Shapiro, NA
Kim, Y
Feick, H
Weber, ER
Perlin, P
Yang, JW
Akasaki, I
Amano, H
Citation: Na. Shapiro et al., Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain, PHYS REV B, 62(24), 2000, pp. R16318-R16321
Authors:
Wagner, M
Buyanova, IA
Thinh, NQ
Chen, WM
Monemar, B
Lindstrom, JL
Amano, H
Akasaki, I
Citation: M. Wagner et al., Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN, PHYS REV B, 62(24), 2000, pp. 16572-16577
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells, PHYS REV B, 62(20), 2000, pp. R13302-R13305
Authors:
Hai, PN
Chen, WM
Buyanova, IA
Monemar, B
Amano, H
Akasaki, I
Citation: Pn. Hai et al., Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study, PHYS REV B, 62(16), 2000, pp. R10607-R10609
Authors:
Pozina, G
Bergman, JP
Bonemar, B
Takeuchi, T
Amano, H
Akasaki, I
Citation: G. Pozina et al., Multiple peak spectra from InGaN/GaN multiple quantum wells, PHYS ST S-A, 180(1), 2000, pp. 85-89
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Kashima, T
Kosaki, M
Yukawa, Y
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N-2 carrier gas, J CRYST GR, 221, 2000, pp. 327-333
Authors:
Kariya, M
Nitta, S
Yamaguchi, S
Kashima, T
Kato, H
Amano, H
Akasaki, I
Citation: M. Kariya et al., Structural characterization of Al1-xInxN lattice-matched to GaN, J CRYST GR, 209(2-3), 2000, pp. 419-423
Authors:
Pozina, G
Bergman, JP
Monemar, B
Takeuchi, T
Amano, H
Akasaki, I
Citation: G. Pozina et al., Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells, J APPL PHYS, 88(5), 2000, pp. 2677-2681
Authors:
Nakamura, M
Nemoto, H
Amano, H
Citation: M. Nakamura et al., Ovipositional characteristics of lacewings, Chrysoperla carnea (Stephans) and Chrysopa pallens (Rambur) (Neuroptera : Crysopidae) in field., JPN J A ENT, 44(1), 2000, pp. 17-26
Authors:
Koike, A
Nemoto, H
Amano, H
Citation: A. Koike et al., New trap for survey of species structure and seasonal dynamics of phytoseiid mites on Japanese pear trees (Acari : Phytoseiidae)., JPN J A ENT, 44(1), 2000, pp. 35-40
Authors:
Amano, H
Yamamoto, H
Senba, M
Oishi, K
Suzuki, S
Fukushima, K
Mukaida, N
Matsushima, K
Eguchi, K
Nagatake, T
Citation: H. Amano et al., Impairment of endotoxin-induced macrophage inflammatory protein 2 gene expression in alveolar macrophages in Streptozotocin-induced diabetes in mice, INFEC IMMUN, 68(5), 2000, pp. 2925-2929
Authors:
Marinelli, C
Khrushchev, IY
Rorison, JM
Penty, RV
White, IH
Kaneko, Y
Watanabe, S
Yamada, N
Takeuchi, T
Amano, H
Akasaki, I
Hasnain, G
Schneider, R
Wang, SY
Tan, MRT
Citation: C. Marinelli et al., Gain-switching of GaInN multiquantum well laser diodes, ELECTR LETT, 36(1), 2000, pp. 83-84
Authors:
Tanaka, S
Nagasaki, S
Ohe, T
Hironaga, M
Sugiyama, D
Matsumoto, J
Mihara, M
Hayashi, M
Imamura, M
Haga, K
Fujita, H
Kato, T
Ishizaki, K
Amano, H
Citation: S. Tanaka et al., The role of cement to be expected in radioactive waste disposal system, (II); From the standpoint of materials design, J ATOM E S, 42(3), 2000, pp. 178-190
Authors:
Pozina, G
Bergman, JP
Monemar, B
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport, APPL PHYS L, 77(11), 2000, pp. 1638-1640
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy, APPL PHYS L, 76(7), 2000, pp. 876-878
Authors:
Pozina, G
Bergman, JP
Monemar, B
Yamaguchi, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant, APPL PHYS L, 76(23), 2000, pp. 3388-3390
Authors:
Chow, WW
Amano, H
Akasaki, I
Citation: Ww. Chow et al., Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers, APPL PHYS L, 76(13), 2000, pp. 1647-1649
Authors:
Kasuga, S
Amano, H
Citation: S. Kasuga et H. Amano, Influence of temperature on the life history parameters of Tyrophagus similis Volgin (Acari : Acaridae), APPL ENT ZO, 35(2), 2000, pp. 237-244
Authors:
Shinkai, S
Watanabe, S
Kumagai, S
Fujiwara, Y
Amano, H
Yoshida, H
Ishizaki, T
Yukawa, H
Suzuki, T
Shibata, H
Citation: S. Shinkai et al., Walking speed as a good predictor for the onset of functional dependence in a Japanese rural community population, AGE AGEING, 29(5), 2000, pp. 441-446
Authors:
Tabuchi, M
Takeda, Y
Matsumoto, N
Amano, H
Akasaki, I
Citation: M. Tabuchi et al., X-ray interference and crystal truncation rod observation of GaN and GaInNlayers grown on sapphire with AlN buffer layer, JPN J A P 1, 38, 1999, pp. 281-284
Authors:
Kariya, M
Nitta, S
Yamaguchi, S
Amano, H
Akasaki, I
Citation: M. Kariya et al., Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy, JPN J A P 2, 38(9AB), 1999, pp. L984-L986
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Low-intensity ultraviolet photodetectors based on AlGaN, JPN J A P 2, 38(5A), 1999, pp. L487-L489
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Kaschner, A
Bechstedt, F
Amano, H
Akasaki, I
Citation: G. Steude et al., Strain modification of GaN in AlGaN/GaN epitaxial films, JPN J A P 2, 38(5A), 1999, pp. L498-L500
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures, JPN J A P 2, 38(2B), 1999, pp. L163-L165
Authors:
Kashima, T
Nakamura, R
Iwaya, M
Katoh, H
Yamaguchi, S
Amano, H
Akasaki, I
Citation: T. Kashima et al., Microscopic investigation of Al0.43Ga0.57N on sapphire, JPN J A P 2, 38(12B), 1999, pp. L1515-L1518