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Results: 1-25/39
Authors:
As, DJ
Kohler, U
Citation: Dj. As et U. Kohler, Carbon - an alternative acceptor for cubic GaN, J PHYS-COND, 13(40), 2001, pp. 8923-8929
Authors:
Bayerl, MW
Brandt, MS
Graf, T
Ambacher, O
Majewski, JA
Stutzmann, M
As, DJ
Lischka, K
Citation: Mw. Bayerl et al., g values of effective mass donors in AlxGa1-xN alloys - art. no. 165204, PHYS REV B, 6316(16), 2001, pp. 5204
Authors:
Fernandez, JRL
Araujo, CM
da Silva, AF
Leite, JR
Sernelius, BE
Tabata, A
Abramof, E
Chitta, VA
Persson, C
Ahuja, R
Pepe, I
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems, J CRYST GR, 231(3), 2001, pp. 420-427
Authors:
As, DJ
Frey, T
Bartels, M
Lischka, K
Goldhahn, R
Shokhovets, S
Tabata, A
Fernandez, JRL
Leite, JR
Citation: Dj. As et al., MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrationaland optical properties, J CRYST GR, 230(3-4), 2001, pp. 421-425
Authors:
Frey, T
As, DJ
Bartels, M
Pawlis, A
Lischka, K
Tabata, A
Fernandez, JRL
Silva, MTO
Leite, JR
Haug, C
Brenn, R
Citation: T. Frey et al., Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures, J APPL PHYS, 89(5), 2001, pp. 2631-2634
Authors:
Husberg, O
Khartchenko, A
As, DJ
Vogelsang, H
Frey, T
Schikora, D
Lischka, K
Noriega, OC
Tabata, A
Leite, JR
Citation: O. Husberg et al., Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures, APPL PHYS L, 79(9), 2001, pp. 1243-1245
Authors:
Liu, MS
Prawer, S
Bursill, LA
As, DJ
Brenn, R
Citation: Ms. Liu et al., Characterization of the surface irregularities of cubic GaN using micro-Raman spectroscopy, APPL PHYS L, 78(18), 2001, pp. 2658-2660
Authors:
Fernandez, JRL
Chitta, VA
Abramof, E
da Silva, AF
Leite, JR
Tabata, A
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature, MRS I J N S, 5, 2000, pp. NIL_191-NIL_196
Authors:
As, DJ
Richter, A
Busch, J
Schottker, B
Lubbers, M
Mimkes, J
Schikora, D
Lischka, K
Kriegseis, W
Burkhardt, W
Meyer, BK
Citation: Dj. As et al., Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si, MRS I J N S, 5, 2000, pp. NIL_264-NIL_269
Authors:
Brenn, R
Jamieson, DN
Cimmino, A
Lee, KK
Frey, T
As, DJ
Prawer, S
Citation: R. Brenn et al., Topographical structure of MBE grown cubic InxGa1-xN films studied with a MeV ion microprobe and by AFM, NUCL INST B, 161, 2000, pp. 435-440
Authors:
Lemos, V
Silveira, E
Leite, JR
Tabata, A
Trentin, R
Scolfaro, LMR
Frey, T
As, DJ
Schikora, D
Lischka, K
Citation: V. Lemos et al., Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering, PHYS REV L, 84(16), 2000, pp. 3666-3669
Authors:
As, DJ
Richter, A
Busch, J
Lubbers, M
Mimkes, J
Lischka, K
Citation: Dj. As et al., Growth and characterization of a cubic GaN p-n light emitting diode on GaAs (001) substrates, PHYS ST S-A, 180(1), 2000, pp. 369-374
Authors:
Wang, C
As, DJ
Buda, B
Lubbers, M
Schikora, D
Mimkes, J
Lischka, K
Citation: C. Wang et al., Cathodoluminescence analysis of cleaved facets of a ZnSe p-n junction, J APPL PHYS, 87(8), 2000, pp. 3823-3828
Authors:
Schikora, D
Schwedhelm, S
As, DJ
Lischka, K
Litvinov, D
Rosenauer, A
Gerthsen, D
Strassburg, M
Hoffmann, A
Bimberg, D
Citation: D. Schikora et al., Investigations on the Stranski-Krastanow growth of CdSe quantum dots, APPL PHYS L, 76(4), 2000, pp. 418-420
Authors:
Goldhahn, R
Scheiner, J
Shokhovets, S
Frey, T
Kohler, U
As, DJ
Lischka, K
Citation: R. Goldhahn et al., Refractive index and gap energy of cubic InxGa1-xN, APPL PHYS L, 76(3), 2000, pp. 291-293
Authors:
Holst, JC
Hoffmann, A
Rudloff, D
Bertram, F
Riemann, T
Christen, J
Frey, T
As, DJ
Schikora, D
Lischka, K
Citation: Jc. Holst et al., The origin of optical gain in cubic InGaN grown by molecular beam epitaxy, APPL PHYS L, 76(20), 2000, pp. 2832-2834
Authors:
Kaczmarczyk, G
Kaschner, A
Reich, S
Hoffmann, A
Thomsen, C
As, DJ
Lima, AP
Schikora, D
Lischka, K
Averbeck, R
Riechert, H
Citation: G. Kaczmarczyk et al., Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations, APPL PHYS L, 76(15), 2000, pp. 2122-2124
Authors:
As, DJ
Frey, T
Schikora, D
Lischka, K
Cimalla, V
Pezoldt, J
Goldhahn, R
Kaiser, S
Gebhardt, W
Citation: Dj. As et al., Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates, APPL PHYS L, 76(13), 2000, pp. 1686-1688
Authors:
As, DJ
Richter, A
Busch, J
Lubbers, M
Mimkes, J
Lischka, K
Citation: Dj. As et al., Electroluminescence of a cubic GaN/GaAs (001) p-n junction, APPL PHYS L, 76(1), 2000, pp. 13-15
Authors:
Frey, T
As, DJ
Schikora, D
Lischka, K
Holst, J
Hoffmann, A
Citation: T. Frey et al., Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures, PHYS ST S-B, 216(1), 1999, pp. 259-263
Authors:
Goldhahn, R
Scheiner, J
Shokhovets, S
Frey, T
Kohler, U
As, DJ
Lischka, K
Citation: R. Goldhahn et al., Determination of optical constants for cubic InxGa1-xN layers, PHYS ST S-B, 216(1), 1999, pp. 265-268
Authors:
Holst, J
Hoffmann, A
Broser, I
Rudloff, D
Bertram, F
Riemann, T
Christen, J
Frey, T
As, DJ
Schikora, D
Lischka, K
Citation: J. Holst et al., Impact of structural properties on the mechanisms of optical amplificationin cubic GaInN, PHYS ST S-B, 216(1), 1999, pp. 471-476
Authors:
Teles, LK
Scolfaro, LMR
Leite, JR
Ramos, LE
Tabata, A
Castineira, JLP
As, DJ
Citation: Lk. Teles et al., Relaxation effects on the negatively charged Mg impurity in zincblende GaN, PHYS ST S-B, 216(1), 1999, pp. 541-545
Authors:
Tabata, A
Silveira, E
Leite, JR
Trentin, R
Scolfaro, LMR
Lemos, V
Frey, T
As, DJ
Schikora, D
Lischka, K
Citation: A. Tabata et al., Raman scattering study of zincblende InxGa1-xN alloys, PHYS ST S-B, 216(1), 1999, pp. 769-774
Authors:
Tabata, A
Lima, AP
Leite, JR
Lemos, V
Schikora, D
Schottker, A
Kohler, U
As, DJ
Lischka, K
Citation: A. Tabata et al., Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate, SEMIC SCI T, 14(4), 1999, pp. 318-322