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Results: 1-24 |
Results: 24
Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
Authors: Qiao, D Jia, L Yu, LS Asbeck, PM Lau, SS Lim, SH Liliental-Weber, Z Haynes, TE Barner, JB
Citation: D. Qiao et al., Ta-based interface ohmic contacts to AlGaN/GaN heterostructures, J APPL PHYS, 89(10), 2001, pp. 5543-5546
Synergistic design of DSP and power amplifiers for wireless communications
Authors: Asbeck, PM Larson, LE Galton, IG
Citation: Pm. Asbeck et al., Synergistic design of DSP and power amplifiers for wireless communications, IEEE MICR T, 49(11), 2001, pp. 2163-2169
Bipolar transistor technology: Past and future directions
Authors: Asbeck, PM Nakamura, T
Citation: Pm. Asbeck et T. Nakamura, Bipolar transistor technology: Past and future directions, IEEE DEVICE, 48(11), 2001, pp. 2455-2456
Herb's bipolar transistors
Authors: Brar, B Sullivan, GJ Asbeck, PM
Citation: B. Brar et al., Herb's bipolar transistors, IEEE DEVICE, 48(11), 2001, pp. 2473-2476
Calibration scheme for LINC transmitter
Authors: Zhang, X Larson, LE Asbeck, PM
Citation: X. Zhang et al., Calibration scheme for LINC transmitter, ELECTR LETT, 37(5), 2001, pp. 317-318
Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures
Authors: Jia, L Yu, ET Keogh, D Asbeck, PM Miraglia, P Roskowski, A Davis, RF
Citation: L. Jia et al., Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures, APPL PHYS L, 79(18), 2001, pp. 2916-2918
A 26.5 GHz silicon MOSFET 2 : 1 dynamic frequency divider
Authors: Wetzel, M Shi, LT Jenkins, KA de la Houssaye, PR Taur, Y Asbeck, PM Lagnado, I
Citation: M. Wetzel et al., A 26.5 GHz silicon MOSFET 2 : 1 dynamic frequency divider, IEEE MICR G, 10(10), 2000, pp. 421-423
Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases
Authors: Hsin, YM Asbeck, PM
Citation: Ym. Hsin et Pm. Asbeck, Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases, SOL ST ELEC, 44(4), 2000, pp. 587-592
Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaNHBTs
Authors: Asbeck, PM Yu, ET Lau, SS Sun, W Dang, X Shi, C
Citation: Pm. Asbeck et al., Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaNHBTs, SOL ST ELEC, 44(2), 2000, pp. 211-219
Trap characterization by gate-drain conductance and capacitance dispersionstudies of an AlGaN/GaN heterostructure field-effect transistor
Authors: Miller, EJ Dang, XZ Wieder, HH Asbeck, PM Yu, ET Sullivan, GJ Redwing, JM
Citation: Ej. Miller et al., Trap characterization by gate-drain conductance and capacitance dispersionstudies of an AlGaN/GaN heterostructure field-effect transistor, J APPL PHYS, 87(11), 2000, pp. 8070-8073
Linearity characteristics of GaAsHBTs and the influence of collector design
Authors: Iwamoto, M Asbeck, PM Low, TS Hutchinson, CP Scott, JB Cognata, A Qin, XH Camnitz, LH D'Avanzo, DC
Citation: M. Iwamoto et al., Linearity characteristics of GaAsHBTs and the influence of collector design, IEEE MICR T, 48(12), 2000, pp. 2377-2388
GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers
Authors: Mochizuki, K Welty, RJ Asbeck, PM Lutz, CR Welser, RE Whitney, SJ Pan, NR
Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers, IEEE DEVICE, 47(12), 2000, pp. 2277-2283
A 10-Gb/s high-isolation, 16 x 16 crosspoint switch implemented with AlGaAs/GaAs HBT's
Authors: Metzger, AG Chang, CE Pedrotti, KD Beccue, SM Wang, KC Asbeck, PM
Citation: Ag. Metzger et al., A 10-Gb/s high-isolation, 16 x 16 crosspoint switch implemented with AlGaAs/GaAs HBT's, IEEE J SOLI, 35(4), 2000, pp. 593-600
GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics
Authors: Mochizuki, K Welty, RJ Asbeck, PM
Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics, ELECTR LETT, 36(3), 2000, pp. 264-265
Bandpass delta-sigma class-S amplifier
Authors: Iwamoto, M Jayaraman, A Hanington, G Chen, PF Bellora, A Thornton, W Larson, LE Asbeck, PM
Citation: M. Iwamoto et al., Bandpass delta-sigma class-S amplifier, ELECTR LETT, 36(12), 2000, pp. 1010-1012
GaN/W/W-oxide metal base transistor with very large current gain and powergain
Authors: Mochizuki, K Uesugi, K Asbeck, PM Gotoh, J Mishima, T Hirata, K Oda, H
Citation: K. Mochizuki et al., GaN/W/W-oxide metal base transistor with very large current gain and powergain, APPL PHYS L, 77(5), 2000, pp. 753-755
Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures
Authors: Yu, ET Dang, XZ Asbeck, PM Lau, SS Sullivan, GJ
Citation: Et. Yu et al., Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures, J VAC SCI B, 17(4), 1999, pp. 1742-1749
Photoemission studies on heterostructure bipolar transistors
Authors: Schuermeyer, F Zampardi, PJ Asbeck, PM
Citation: F. Schuermeyer et al., Photoemission studies on heterostructure bipolar transistors, SOL ST ELEC, 43(8), 1999, pp. 1555-1560
Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications
Authors: Chen, PF Hsin, YMT Welty, RJ Asbeck, PM Pierson, RL Zampardi, PJ Ho, WJ Ho, MCV Chang, MF
Citation: Pf. Chen et al., Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications, IEEE MICR T, 47(8), 1999, pp. 1433-1438
A power re-use technique for improved efficiency of outphasing microwave power amplifiers
Authors: Langridge, R Thornon, T Asbeck, PM Larson, LE
Citation: R. Langridge et al., A power re-use technique for improved efficiency of outphasing microwave power amplifiers, IEEE MICR T, 47(8), 1999, pp. 1467-1470
High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications
Authors: Hanington, G Chen, PF Asbeck, PM Larson, LE
Citation: G. Hanington et al., High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications, IEEE MICR T, 47(8), 1999, pp. 1471-1476
Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET
Authors: Dang, XZ Welty, RJ Qiao, D Asbeck, PM Lau, SS Yu, ET Boutros, KS Redwing, JM
Citation: Xz. Dang et al., Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET, ELECTR LETT, 35(7), 1999, pp. 602-603
Piezoelectric polarization associated with dislocations in wurtzite GaN
Authors: Shi, C Asbeck, PM Yu, ET
Citation: C. Shi et al., Piezoelectric polarization associated with dislocations in wurtzite GaN, APPL PHYS L, 74(4), 1999, pp. 573-575
Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor
Authors: Dang, XZ Asbeck, PM Yu, ET Sullivan, GJ Chen, MY McDermott, BT Boutros, KS Redwing, JM
Citation: Xz. Dang et al., Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor, APPL PHYS L, 74(25), 1999, pp. 3890-3892
Risultati: 1-24 |