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Results: 1-25/36
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
van Laarhoven, HA
Look, DC
Citation: Fd. Auret et al., The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO, J PHYS-COND, 13(40), 2001, pp. 8989-8999
Authors:
Goodman, SA
Auret, FD
Myburg, G
Legodi, MJ
Gibart, P
Beaumont, B
Citation: Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
Authors:
Auret, FD
Goodman, SA
Myburg, G
Mohney, SE
de Lucca, JM
Citation: Fd. Auret et al., Processing-induced electron traps in n-type GaN, MAT SCI E B, 82(1-3), 2001, pp. 102-104
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
Hullavarad, SS
Friedland, E
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons, NUCL INST B, 175, 2001, pp. 292-295
Authors:
Mamor, M
Willander, M
Auret, FD
Meyer, WE
Sveinbjornsson, E
Citation: M. Mamor et al., Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201, PHYS REV B, 6304(4), 2001, pp. 5201
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
van Laarhoven, HA
Look, DC
Citation: Fd. Auret et al., Electrical characterization of 1.8 MeV proton-bombarded ZnO, APPL PHYS L, 79(19), 2001, pp. 3074-3076
Authors:
Goodman, SA
Auret, FD
Legodi, MJ
Beaumont, B
Gibart, P
Citation: Sa. Goodman et al., Characterization of electron-irradiated n-GaN, APPL PHYS L, 78(24), 2001, pp. 3815-3817
Authors:
Swart, M
Auret, FD
Goodman, SA
Citation: M. Swart et al., Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE, MAT SC S PR, 3(1-2), 2000, pp. 97-101
Authors:
Auret, FD
Goodman, SA
Meyer, WE
Koschnick, FK
Spaeth, JM
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Metallisation induced electron traps in epitaxially grown n-type GaN, MAT SCI E B, 71, 2000, pp. 77-81
Authors:
Legodi, MJ
Auret, FD
Goodman, SA
Citation: Mj. Legodi et al., Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation, MAT SCI E B, 71, 2000, pp. 96-99
Authors:
Goodman, SA
Auret, FD
Koschnick, FK
Spaeth, JM
Beaumont, B
Gibart, P
Citation: Sa. Goodman et al., Radiation induced defects in MOVPE grown n-GaN, MAT SCI E B, 71, 2000, pp. 100-103
Authors:
Deenapanray, PNK
Tan, HH
Jagadish, C
Auret, FD
Citation: Pnk. Deenapanray et al., Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers, J APPL PHYS, 88(9), 2000, pp. 5255-5261
Authors:
DeLucca, JM
Mohney, SE
Auret, FD
Goodman, SA
Citation: Jm. Delucca et al., Pt Schottky contacts to n-GaN formed by electrodeposition and physical vapor deposition, J APPL PHYS, 88(5), 2000, pp. 2593-2600
Authors:
Ouacha, H
Mamor, M
Willander, M
Ouacha, A
Auret, FD
Citation: H. Ouacha et al., Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts, J APPL PHYS, 87(8), 2000, pp. 3858-3863
Authors:
Deenapanray, PNK
Tan, HH
Jagadish, C
Auret, FD
Citation: Pnk. Deenapanray et al., Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition, APPL PHYS L, 77(5), 2000, pp. 696-698
Authors:
Mamor, M
Ouacha, H
Willander, M
Auret, FD
Goodman, SA
Ouacha, A
Sveinbjornsson, E
Citation: M. Mamor et al., High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions, APPL PHYS L, 76(25), 2000, pp. 3750-3752
Authors:
Auret, FD
Goodman, SA
Myburg, G
Koschnick, FK
Spaeth, JM
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts, PHYSICA B, 274, 1999, pp. 84-87
Authors:
Auret, FD
Meyer, WE
Goodman, SA
Koschnick, FK
Spaeth, JM
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN, PHYSICA B, 274, 1999, pp. 92-95
Authors:
Legodi, MJ
Auret, FD
Goodman, SA
Citation: Mj. Legodi et al., Dopant-related metastable defects in particle irradiated n-GaAs, PHYSICA B, 274, 1999, pp. 762-765
Authors:
Mamor, M
Auret, FD
Willander, M
Goodman, SA
Myburg, G
Meyer, F
Citation: M. Mamor et al., Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma, SEMIC SCI T, 14(7), 1999, pp. 611-614
Authors:
Goodman, SA
Auret, FD
du Plessis, M
Meyer, WE
Citation: Sa. Goodman et al., The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector, SEMIC SCI T, 14(4), 1999, pp. 323-326
Authors:
Deenapanray, PNK
Meyer, WE
Auret, FD
Citation: Pnk. Deenapanray et al., Electric-field-enhanced emission and annealing behaviour of electron trapsintroduced in n-Si by low-energy He ion bombardment, SEMIC SCI T, 14(1), 1999, pp. 41-47
Authors:
Deenapanray, PNK
Auret, FD
Myburg, G
Citation: Pnk. Deenapanray et al., Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma, NUCL INST B, 148(1-4), 1999, pp. 300-305
Authors:
Hayes, M
Goodman, SA
Auret, FD
Citation: M. Hayes et al., Electrical characterization of low temperature He-ion irradiated GaN, NUCL INST B, 148(1-4), 1999, pp. 437-440
Authors:
Legodi, MJ
Auret, FD
Goodman, SA
Malherbe, JB
Citation: Mj. Legodi et al., Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 441-445