AAAAAA
Results:
1-15
|
Results: 15
Authors:
TEMPEZ A
BADI N
BENSAOULA A
KULIK J
Citation: A. Tempez et al., SURFACE-COMPOSITION OF BN, CN, AND BCN THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2896-2900
Authors:
BADI N
BOUSETTA A
BENSAOULA A
AOURAG H
Citation: N. Badi et al., DYNAMICAL CHARGE AND FORCE-CONSTANT CALCULATIONS IN C-BN UNDER PRESSURE, Physica status solidi. b, Basic research, 198(2), 1996, pp. 721-728
Authors:
ABID H
BADI N
DRIZ M
BOUARISSA N
BENKABOU KH
KHELIFA B
AOURAG H
Citation: H. Abid et al., ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 133-139
Authors:
ALKHAFAJI ST
AMRANE N
BOUARISSA N
BADI N
SOUDINI B
SEHIL M
AOURAG H
Citation: St. Alkhafaji et al., PRESSURE-DEPENDENCE OF ELECTRON AND POSITRON BAND STRUCTURES IN ELEMENTAL SEMICONDUCTORS, Physica status solidi. b, Basic research, 189(1), 1995, pp. 139-151
Authors:
KALAI H
KHELIFA B
BADI N
ABID H
AMRANE N
SOUDINI B
AOURAG H
Citation: H. Kalai et al., CORRELATION BETWEEN HIGH-PRESSURE EFFECTS AND ALLOYING IN GAP AND ALP, Materials chemistry and physics, 39(3), 1995, pp. 180-184
Authors:
SOUDINI B
AMRANE N
BADI N
KHELIFA B
AOURAG H
Citation: B. Soudini et al., POSITRON-ANNIHILATION STUDIES IN GAXIN1-XAS, Solid state communications, 96(12), 1995, pp. 987-991
Authors:
DRISSKHODJA F
ABID H
KHELIFA B
AMRANE N
SOUDINI B
DRIZ M
BADI N
AOURAG H
Citation: F. Drisskhodja et al., ELECTRONIC-STRUCTURE OF THE PSEUDOBINARY SEMICONDUCTOR ALLOY GAXAL1-XSB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 93-97
Authors:
DRIZ M
AOURAG H
ABID H
KHELIFA B
BADI N
Citation: M. Driz et al., THE PSEUDOBINARY ALLOY (GA, AL)AS UNDER HYDROSTATIC-PRESSURE, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 159-165
Authors:
BADI N
AMRANE N
ABID H
DRIZ M
SOUDINI B
KHELIFA B
AOURAG H
Citation: N. Badi et al., PRESSURE-DEPENDENT PROPERTIES OF BORON PHOSPHIDE, Physica status solidi. b, Basic research, 185(2), 1994, pp. 379-388
Authors:
BADI N
ABID H
SOUDINI B
AMRANE N
DRIZ M
DUFOUR JP
AOURAG H
KHELIFA B
Citation: N. Badi et al., THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP, Physica status solidi. b, Basic research, 184(2), 1994, pp. 365-372
Authors:
BENKABOU F
BADI N
DUFOUR JP
KOBAYASI T
NARA H
KHELIFA B
AOURAG H
Citation: F. Benkabou et al., PRESSURE-DEPENDENCE OF THE BAND-GAPS AND CHARGE-DENSITIES IN SI, Physica status solidi. b, Basic research, 182(1), 1994, pp. 109-117
Authors:
RYDER RW
NSUAMI M
NSA W
KAMENGA M
BADI N
UTSHUDI M
HEYWARD WL
Citation: Rw. Ryder et al., MORTALITY IN HIV-1-SEROPOSITIVE WOMEN, THEIR SPOUSES AND THEIR NEWLY BORN CHILDREN DURING 36 MONTHS OF FOLLOW-UP IN KINSHASA, ZAIRE, AIDS, 8(5), 1994, pp. 667-672
Authors:
BADI N
ABID H
SOUDINI B
AMRANE N
DRIZ M
KHELIFA B
AOURAG H
Citation: N. Badi et al., VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS, Materials chemistry and physics, 38(3), 1994, pp. 243-249
Authors:
ABID H
BADI N
SOUDINI B
AMRANE N
DRIZ M
HAMMADI M
AOURAG H
KHELIFA B
Citation: H. Abid et al., PRESSURE-DEPENDENCE OF BAND-GAPS IN GAAS, GAP, INP, AND INAS, Materials chemistry and physics, 38(2), 1994, pp. 162-168
Authors:
AOURAG H
SELLAL F
ABID H
BADI N
MAHMOUDI A
KHELIFA B
Citation: H. Aourag et al., THE HIGH-PRESSURE BEHAVIOR OF ALSB, Materials chemistry and physics, 33(3-4), 1993, pp. 254-259
Risultati:
1-15
|