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Results: 1-18 |
Results: 18

Authors: BALBONI R FRABBONI S ARMIGLIATO A
Citation: R. Balboni et al., DETERMINATION OF BULK MISMATCH VALUES IN TRANSMISSION ELECTRON-MICROSCOPY CROSS-SECTIONS OF HETEROSTRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(1), 1998, pp. 67-83

Authors: ARMIGLIATO A HOWARD DJ BALBONI R FRABBONI S CAYMAX MR
Citation: A. Armigliato et al., ON THE SPATIAL-RESOLUTION IN ANALYTICAL ELECTRON-MICROSCOPY, Mikrochimica acta (1966), 1998, pp. 59-64

Authors: FOLEY S SCORZONI A BALBONI R IMPRONTA M DEMUNARI I MATHEWSON A FANTINI F
Citation: S. Foley et al., A COMPARISON BETWEEN NORMALLY AND HIGHLY ACCELERATED ELECTROMIGRATIONTESTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1021-1027

Authors: BISERO D CORNI F FRABBONI S TONINI R OTTAVIANI G BALBONI R
Citation: D. Bisero et al., GROWTH-KINETICS OF A DISPLACEMENT FIELD IN HYDROGEN IMPLANTED SINGLE-CRYSTALLINE SILICON, Journal of applied physics, 83(8), 1998, pp. 4106-4110

Authors: ARMIGLIATO A BALBONI R BENEDETTI A FRABBONI S TIXIER A VANHELLEMONT J
Citation: A. Armigliato et al., STRAIN-MEASUREMENTS IN THIN-FILM STRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Journal de physique. III, 7(12), 1997, pp. 2375-2381

Authors: SCORZONI A FRANCESCHINI S BALBONI R IMPRONTA M DEMUNARI I FANTINI F
Citation: A. Scorzoni et al., ARE HIGH-RESOLUTION RESISTOMETRIC METHODS REALLY USEFUL FOR THE EARLYDETECTION OF ELECTROMIGRATION DAMAGE, Microelectronics and reliability, 37(10-11), 1997, pp. 1479-1482

Authors: SCORZONI A DEMUNARI I BALBONI R TAMARRI F GARULLI A FANTINI F
Citation: A. Scorzoni et al., RESISTANCE CHANGES DUE TO CU TRANSPORT AND PRECIPITATION DURING ELECTROMIGRATION IN SUBMICROMETRIC AL-0.5-PERCENT-CU LINES, Microelectronics and reliability, 36(11-12), 1996, pp. 1691-1694

Authors: BALBONI R ARMIGLIATO A FRABBONI S
Citation: R. Balboni et al., BULK MISMATCH VALUES OF HETEROSTRUCTURES AS DETERMINED FROM CONVERGENT-BEAM ELECTRON-DIFFRACTION ON THIN CROSS-SECTIONS, Applied physics letters, 68(20), 1996, pp. 2831-2833

Authors: ARMIGLIATO A BALBONI R CORTICELLI F FRABBONI S
Citation: A. Armigliato et al., INFLUENCE OF EXPERIMENTAL PARAMETERS ON THE DETERMINATION OF TETRAGONAL DISTORTION IN HETEROSTRUCTURES BY LACBED, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 449-456

Authors: ARMIGLIATO A BALBONI R CORTICELLI F FRABBONI S MALVEZZI F
Citation: A. Armigliato et al., ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES/, Materials science and technology, 11(4), 1995, pp. 400-406

Authors: SEALY L BARKLIE RC LULLI G NIPOTI R BALBONI R MILITA S SERVIDORI M
Citation: L. Sealy et al., EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 215-218

Authors: CEROFOLINI GF BALBONI R BISERO D CORNI F FRABBONI S OTTAVIANI G TONINI R BRUSA RS ZECCA A CESCHINI M GIEBEL G PAVESI L
Citation: Gf. Cerofolini et al., HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON, Physica status solidi. a, Applied research, 150(2), 1995, pp. 539-586

Authors: BALBONI R MILITA S SERVIDORI M
Citation: R. Balboni et al., ON THE ROLE OF THE STATIC DEBYE-WALLER FACTOR IN X-RAY ROCKING CURVE ANALYSIS, Physica status solidi. a, Applied research, 148(1), 1995, pp. 95-105

Authors: CORNI F TONINI R BALBONI R VESCAN L
Citation: F. Corni et al., RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 9-13

Authors: SERVIDORI M CEMBALI F ZAZZETTI L BALBONI R
Citation: M. Servidori et al., THE PROBLEM OF CONVOLUTION IN THE SIMULATION OF MULTICRYSTAL X-RAY ROCKING CURVES OF SEMICONDUCTOR-MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 523-526

Authors: ARMIGLIATO A GOVONI D BALBONI R FRABBONI S BERTI M ROMANATO F DRIGO AV
Citation: A. Armigliato et al., ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES, Mikrochimica acta, 114, 1994, pp. 175-185

Authors: BALBONI R FRABBONI S RINALDI R SPIGARELLI S
Citation: R. Balboni et al., X-RAY-EMISSION MODULATION BY ELECTRON CHANNELING AND SITE OCCUPANCY IN GARNETS, Mikrochimica acta, 114, 1994, pp. 187-194

Authors: CEROFOLINI GF BERTONI S MEDA L BALBONI R CORNI F FRABBONI S OTTAVIANI G TONINI R PARA AF
Citation: Gf. Cerofolini et al., GIANT RADIATION-DAMAGE PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONSONTO SILICON SINGLE-CRYSTAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 132-136
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