Citation: R. Balboni et al., DETERMINATION OF BULK MISMATCH VALUES IN TRANSMISSION ELECTRON-MICROSCOPY CROSS-SECTIONS OF HETEROSTRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(1), 1998, pp. 67-83
Authors:
FOLEY S
SCORZONI A
BALBONI R
IMPRONTA M
DEMUNARI I
MATHEWSON A
FANTINI F
Citation: S. Foley et al., A COMPARISON BETWEEN NORMALLY AND HIGHLY ACCELERATED ELECTROMIGRATIONTESTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1021-1027
Authors:
BISERO D
CORNI F
FRABBONI S
TONINI R
OTTAVIANI G
BALBONI R
Citation: D. Bisero et al., GROWTH-KINETICS OF A DISPLACEMENT FIELD IN HYDROGEN IMPLANTED SINGLE-CRYSTALLINE SILICON, Journal of applied physics, 83(8), 1998, pp. 4106-4110
Authors:
ARMIGLIATO A
BALBONI R
BENEDETTI A
FRABBONI S
TIXIER A
VANHELLEMONT J
Citation: A. Armigliato et al., STRAIN-MEASUREMENTS IN THIN-FILM STRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Journal de physique. III, 7(12), 1997, pp. 2375-2381
Authors:
SCORZONI A
FRANCESCHINI S
BALBONI R
IMPRONTA M
DEMUNARI I
FANTINI F
Citation: A. Scorzoni et al., ARE HIGH-RESOLUTION RESISTOMETRIC METHODS REALLY USEFUL FOR THE EARLYDETECTION OF ELECTROMIGRATION DAMAGE, Microelectronics and reliability, 37(10-11), 1997, pp. 1479-1482
Authors:
SCORZONI A
DEMUNARI I
BALBONI R
TAMARRI F
GARULLI A
FANTINI F
Citation: A. Scorzoni et al., RESISTANCE CHANGES DUE TO CU TRANSPORT AND PRECIPITATION DURING ELECTROMIGRATION IN SUBMICROMETRIC AL-0.5-PERCENT-CU LINES, Microelectronics and reliability, 36(11-12), 1996, pp. 1691-1694
Citation: R. Balboni et al., BULK MISMATCH VALUES OF HETEROSTRUCTURES AS DETERMINED FROM CONVERGENT-BEAM ELECTRON-DIFFRACTION ON THIN CROSS-SECTIONS, Applied physics letters, 68(20), 1996, pp. 2831-2833
Authors:
ARMIGLIATO A
BALBONI R
CORTICELLI F
FRABBONI S
Citation: A. Armigliato et al., INFLUENCE OF EXPERIMENTAL PARAMETERS ON THE DETERMINATION OF TETRAGONAL DISTORTION IN HETEROSTRUCTURES BY LACBED, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 449-456
Authors:
ARMIGLIATO A
BALBONI R
CORTICELLI F
FRABBONI S
MALVEZZI F
Citation: A. Armigliato et al., ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES/, Materials science and technology, 11(4), 1995, pp. 400-406
Authors:
SEALY L
BARKLIE RC
LULLI G
NIPOTI R
BALBONI R
MILITA S
SERVIDORI M
Citation: L. Sealy et al., EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 215-218
Authors:
CEROFOLINI GF
BALBONI R
BISERO D
CORNI F
FRABBONI S
OTTAVIANI G
TONINI R
BRUSA RS
ZECCA A
CESCHINI M
GIEBEL G
PAVESI L
Citation: Gf. Cerofolini et al., HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON, Physica status solidi. a, Applied research, 150(2), 1995, pp. 539-586
Citation: R. Balboni et al., ON THE ROLE OF THE STATIC DEBYE-WALLER FACTOR IN X-RAY ROCKING CURVE ANALYSIS, Physica status solidi. a, Applied research, 148(1), 1995, pp. 95-105
Citation: F. Corni et al., RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 9-13
Authors:
SERVIDORI M
CEMBALI F
ZAZZETTI L
BALBONI R
Citation: M. Servidori et al., THE PROBLEM OF CONVOLUTION IN THE SIMULATION OF MULTICRYSTAL X-RAY ROCKING CURVES OF SEMICONDUCTOR-MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 523-526
Authors:
ARMIGLIATO A
GOVONI D
BALBONI R
FRABBONI S
BERTI M
ROMANATO F
DRIGO AV
Citation: A. Armigliato et al., ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES, Mikrochimica acta, 114, 1994, pp. 175-185
Authors:
CEROFOLINI GF
BERTONI S
MEDA L
BALBONI R
CORNI F
FRABBONI S
OTTAVIANI G
TONINI R
PARA AF
Citation: Gf. Cerofolini et al., GIANT RADIATION-DAMAGE PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONSONTO SILICON SINGLE-CRYSTAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 132-136