Authors: BALMASHNOV AA

Citation: Aa. Balmashnov, CERA-V - MICROWAVE PLASMA STREAM SOURCE WITH VARIABLE ION ENERGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 471-473

Authors: POLYAKOV AY CHELNIY AA GOVORKOV AV SMIRNOV NB MILNES AG PEARTON SJ WILSON RG BALMASHNOV AA ALUEV AN MARKOV AV

Citation: Ay. Polyakov et al., EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP, Solid-state electronics, 38(6), 1995, pp. 1131-1135

Authors: POLYAKOV AY SMIRNOV NB CHELNIY AA BALMASHNOV AA MILNES AG PEARTON SJ

Citation: Ay. Polyakov et al., THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP, Solid-state electronics, 38(4), 1995, pp. 771-774

Authors: POLYAKOV AY MILNES AG LI XL BALMASHNOV AA SMIRNOV NB

Citation: Ay. Polyakov et al., HYDROGEN AND NITROGEN PLASMA TREATMENT EFFECTS ON SURFACE-PROPERTIES OF GASB AND INGAASSB, Solid-state electronics, 38(10), 1995, pp. 1743-1745

Authors: POLYAKOV AY TUNITSKAYA IV DRUZHININA LV GOVORKOV AV SMIRNOV NB KOZHUKHOVA EA BORODINA OM MILNES AG LI XL PEARTON SJ BALMASHNOV AA

Citation: Ay. Polyakov et al., HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 137-141

Authors: DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG

Citation: Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150