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Results: 1-8 |
Results: 8
MEASUREMENTS AND CALCULATIONS OF THE VALENCE-BAND OFFSETS OF SIOX ZNS(111) AND SIOX/CDTE(111) HETEROJUNCTIONS/
Authors: BAN DY XUE JG FANG RC XU SH LU ED XU PS
Citation: Dy. Ban et al., MEASUREMENTS AND CALCULATIONS OF THE VALENCE-BAND OFFSETS OF SIOX ZNS(111) AND SIOX/CDTE(111) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 989-995
IMPROVEMENT OF SAG RESISTANCE BY THE ADDITION OF TUNGSTEN IN SI-CR-MO-V STEELS
Authors: NAM WJ LEE CS BAN DY
Citation: Wj. Nam et al., IMPROVEMENT OF SAG RESISTANCE BY THE ADDITION OF TUNGSTEN IN SI-CR-MO-V STEELS, Scripta materialia, 36(11), 1997, pp. 1315-1320
EFFECT OF GROWTH TEMPERATURE ON THE BAND LINEUP OF GE CDTE(111) POLARINTERFACES/
Authors: BAN DY FANG RC XUE JG LU ED XU PS
Citation: Dy. Ban et al., EFFECT OF GROWTH TEMPERATURE ON THE BAND LINEUP OF GE CDTE(111) POLARINTERFACES/, Chinese Physics Letters, 14(8), 1997, pp. 609-612
INTERFACE ELECTRONIC-STRUCTURE OF GE ZNSE(111)/
Authors: ZHANG HF WANG CY FANG RC BAN DY LI YP
Citation: Hf. Zhang et al., INTERFACE ELECTRONIC-STRUCTURE OF GE ZNSE(111)/, Chinese Physics Letters, 14(2), 1997, pp. 128-130
STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/
Authors: BAN DY YANG FY FANG RC XU SH XU PS MENG XX
Citation: Dy. Ban et al., STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 39(6), 1996, pp. 637-646
INTERFACE FORMATION OF GE ZNSE(100) AND GE/ZNS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/
Authors: BAN DY YANG FY FANG RC XU SH XU PS
Citation: Dy. Ban et al., INTERFACE FORMATION OF GE ZNSE(100) AND GE/ZNS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Acta physica Sinica, 5(8), 1996, pp. 590-600
VALENCE-BAND OFFSET AND INTERFACE FORMATION OF GE ZNSE(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/
Authors: YANG FY BAN DY FANG RC XU SH XU PS YUAN SX
Citation: Fy. Yang et al., VALENCE-BAND OFFSET AND INTERFACE FORMATION OF GE ZNSE(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 193-196
SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY OF GE ZNS(111) HETEROJUNCTION/
Authors: BAN DY YANG FY FANG RC XU SH XU PS
Citation: Dy. Ban et al., SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY OF GE ZNS(111) HETEROJUNCTION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 197-200
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